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4H-N As - Cut Silicon Carbide Wafer 0.6mm Thickness For Power Electronics

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4H-N As - Cut Silicon Carbide Wafer 0.6mm Thickness For Power Electronics

China 4H-N As - Cut Silicon Carbide Wafer 0.6mm Thickness For Power Electronics supplier
4H-N As - Cut Silicon Carbide Wafer 0.6mm Thickness For Power Electronics supplier 4H-N As - Cut Silicon Carbide Wafer 0.6mm Thickness For Power Electronics supplier 4H-N As - Cut Silicon Carbide Wafer 0.6mm Thickness For Power Electronics supplier

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Product Details:

Place of Origin: china
Brand Name: zmsh
Model Number: 6inch

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Price: by case
Packaging Details: by customized case
Delivery Time: 15days within
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Detailed Product Description
Industry: Semiconductor Substrate Materials: Sic Crystal
Application: 5G, Device Material, MOCVD,power Electronics Type: 4H-N,semi ,No Doped
Color: Green,blue, White Hardeness: 9.0 Up

6inch sic substrates, sic ingot sic crystal ingots sic crystal block sic semiconductor substrates 2inch 3inch 4inch 6inch 4h no doped wafer

 

 we  can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 -6inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

 

1.material application and advantagement

Applications:

• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes

 

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

 

 

SILICON CARBIDE MATERIAL PROPERTIES
Polytype
Single Crystal 4H
Single Crystal 6H
Lattice Parameters
a=3.076 Å
a=3.073 Å
c=10.053 Å
c=15.117 Å
Stacking Sequence
ABCB
ABCACB
Band-gap
3.26 eV
3.03 eV
Density
3.21 · 103 kg/m3
3.21 · 103 kg/m3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
Refraction Index
no = 2.719
no = 2.707
ne = 2.777
ne = 2.755
Dielectric Constant
9.6
9.66
Thermal Conductivity
490 W/mK
490 W/mK
Break-Down Electrical Field
2 – 4 · 108 V/m
2 – 4 · 108 V/m
Saturation Drift Velocity
2.0 · 105 m/s
2.0 · 105 m/s
Electron Mobility
800 cm2/V·S
400 cm2/V·S
hole Mobility
115 cm2/V·S
90 cm2/V·S
Mohs Hardness
~9
 
2. Material Size describtion
 
4H-N As - Cut Silicon Carbide Wafer 0.6mm Thickness For Power Electronics
 
 
3.productes
4H-N As - Cut Silicon Carbide Wafer 0.6mm Thickness For Power Electronics

 

4H-N As - Cut Silicon Carbide Wafer 0.6mm Thickness For Power Electronics

FAQ:

 

Q: What's your MOQ and delivery time?

A: (1) For inventory, the MOQ is 3pcs. if 5-10pcs it's better in 10-30days

(2) For 6inch customized products, the MOQ is 10pcs up in 30-50days

 

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and Freight is in accordance with the actual settlement.

 

Q: How to pay?

A: T/T,  100%

 

Q: Do you have standard products?

A:there are not 6inch Our standard products in stock.

but as like substrates 4inch 0.33mm  2sp thickness have some in stock 

 

Thanks~~~
 

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

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