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Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

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Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

China Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch supplier
Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch supplier Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch supplier Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch supplier

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Product Details:

Place of Origin: CHINA
Brand Name: zmkj
Model Number: GaN-2INCH 10x10mm

Payment & Shipping Terms:

Minimum Order Quantity: 5pc
Price: by case
Packaging Details: single wafer case in 100-grade cleaning room
Delivery Time: 2-4weeks
Payment Terms: L/C, T/T
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Detailed Product Description
Material: GaN Single Crystal Method: HVPE
Size: 2inch Or 10x10mm Thickness: 430um Or Customized
Industry: LD,led,laser Device,detector, Package: Sing Wafer Cassettle By Vacuum Package


2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer

 

 

  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

 

    Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.
GaN can be used in many areas such as LED display, High-energy Detection and Imaging,

  1. Laser Projection Display, Power Device, etc.
  2. Date storage
  3. Energy-efficient lighting
  4. Full color fla display 
  5. Laser Projecttions
  6. High- Efficiency Electronic devices 
  7. High- Frequency Microwave Devices
  8. High-energy Detection and imagine
  9. New energy solor hydrogen technology 
  10. Environment Detection and biological medicine
  11. Light source terahertz band

 
Specifications:

  Free-standing GaN Substrates (Customized size)
Item GaN-FS-10 GaN-FS-15
Dimensions 10.0mm×10.5mm 14.0mm×15.0mm
Marco Defect Density A Level 0 cm-2
B Level ≤ 2 cm-2
Thickness Rank 300 300 ± 25 µm
Rank 350 350 ± 25 µm
Rank 400 400 ± 25 µm
Orientation C-axis(0001) ± 0.5°
TTV   ( Total Thickness Variation) ≤15 µm
BOW ≤20 µm
Conduction Type N-type Semi-Insulating
Resistivity(300K) < 0.5 Ω·cm >106 Ω·cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

Item GaN-FS-N-1.5
Dimensions Ф 25.4mm ± 0.5mm Ф 38.1mm ± 0.5mm Ф 40.0mm ± 0.5mm Ф 45.0mm ± 0.5mm
Marco Defect Density A Level ≤ 2 cm-2
B Level > 2 cm-2
Thickness 300 ± 25 µm
Orientation C-axis(0001) ± 0.5°
Orientation Flat (1-100) ± 0.5° (1-100) ± 0.5° (1-100) ± 0.5° (1-100) ± 0.5°
8 ± 1mm 12 ± 1mm 14 ± 1mm 14 ± 1mm
Secondary Orientation Flat (11-20) ± 3° (11-20) ± 3° (11-20) ± 3° (11-20) ± 3°
4 ± 1mm 6 ± 1mm 7 ± 1mm 7 ± 1mm
TTV(Total Thickness Variation) ≤15 µm
BOW ≤20 µm
Conduction Type N-type Semi-Insulating
Resistivity(300K) < 0.5 Ω·cm >106 Ω·cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch
Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

 Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.
 
-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg
 
Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.
 
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.
 
Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.
 
 

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

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