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3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics
  • 3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics
  • 3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics
  • 3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics

3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics

Place of Origin china
Brand Name zmsh
Certification no
Model Number GaAs-3inch
Product Details
Material:
GaAs Single Crystal Substrates
Industry:
Semicondutor Wafer
Application:
Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates
Method:
VFG
Size:
2-6inch
Thickness:
675um
Type:
N-TYPE
Orientation:
15°
Thickness:
450um
High Light: 

microelectronics gallium arsenide wafer

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76.2mmgallium arsenide wafer

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microelectronics gaas wafer

Product Description

 

VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics,

 

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GaAs) Gallium Arsenide Wafers

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure.

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.[2]

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide and others.

GaAs Wafer Feature and Application

Feature Application field
High electron mobility Light emitting diodes
High frequency Laser diodes
High conversion efficiency Photovoltaic devices
Low power consumption High Electron Mobility Transistor
Direct band gap Heterojunction Bipolar Transistor

 

Specification

Undoped GaAs

Semi-Insulating GaAs Specifications

 

Growth Method VGF
Dopant Carbon
Wafer Shape* Round (DIA: 2", 3", 4", and 6")
Surface Orientation** (100)±0.5°

*5" Wafers available upon request

**Other Orientations maybe available upon request

 

Resistivity (Ω.cm) ≥1 × 107 ≥1 × 108
Mobility (cm2/V.S) ≥ 5,000 ≥ 4,000
Etch Pitch Density (cm2) 1,500-5,000 1,500-5,000

 

Wafer Diameter (mm) 50.8±0.3 76.2±0.3 100±0.3 150±0.3
Thickness (µm) 350±25 625±25 625±25 675±25
TTV [P/P] (µm) ≤ 4 ≤ 4 ≤ 4 ≤ 4
TTV [P/E] (µm) ≤ 10 ≤ 10 ≤ 10 ≤ 10
WARP (µm) ≤10 ≤10 ≤10 ≤5
OF (mm) 17±1 22±1 32.5±1 NOTCH
OF / IF (mm) 7±1 12±1 18±1 N/A
Polish* E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P

*E=Etched, P=Polished

 

3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics 0

3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics 1

FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics

Q: Do you have inspection report for material?
We can supply detail report  for our products.
 

Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product , we will take a different packaging process!

 

 

Contact Us at Any Time

86-1580-1942596
Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Send your inquiry directly to us