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2inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type
  • 2inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type
  • 2inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type
  • 2inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type

2inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type

Place of Origin china
Brand Name zmsh
Certification ROHS
Model Number 6INCH GaAs wafer
Product Details
Material:
MONOcrystal GaAs
Industry:
Semicondutor Wafer For Ld Or Led
Application:
Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates
Method:
CZ
Size:
2inch~6inch
Thickness:
0.425mm
Surface:
Cmp/etched
Doped:
Si-doped
MOQ:
10PCS
Grade:
Research Grade/dummy Grade
High Light: 

2inch GaAs Substrates

,

Single Crystal Gallium Arsenide Substrates

,

Semiconductor N Type GaAs Wafer

Product Description

2inch GaAs Substrates Single Crystal Gallium Arsenide Substrates Semi-Conducting N Type


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GaAs wafer

Gallium arsenide (GaAs) is an excellent semiconducting material. It has large direct band gap, high electron mobility, high frequency low noise and high conversion efficiency) and other outstanding advantages.

GaAs substrate is divided into conductive and semi-insulating, widely used in laser (LD), semiconductor light-emitting diode (LED), near infrared laser, quantum well high-power laser and high efficiency solar panels; HEMT and HBT chips for radar, microwave, millimeter wave or ultra-high speed computers and optical communications; Radio frequency devices for wireless communication, 4G, 5G, satellite communication, WLAN.

Recently, gallium arsenide substrate has also made great progress in mini-LED, Micro-LED and red light LED, which is widely used in AR/VR wearable devices.

 

GaAs Wafer Market&Application
Gallium arsenide is an important semiconductor materialIt belongs to gro up lll-V compound semiconductors and the zincblende crystal lattice structure, with a lattice constantof5.65x10-10ma melting point of1237° C,and a band gap of 1.4 electron volts.Gallium arsenide can be made into semi-insulating high-resistance materialswhich can be used to make integrated circuit substratesinfrared detectorsgamma photon
detectors,etc.Because its electron mobility is 5to6times greater than sili con,SI GaAs substrate has been importantly used in the fabrication of microwave devices and high-speed digital circuits.Semiconductor devices fabricated on gallium arsenide have the advantages of high frequency high temperature, lowtemperature performancelow noiseand strong rac iation resistance,which make the GaAs substrate market enlarge.

 
Specification

 

GaAs (Gallium Arsenide) ,Semi-insulating for Microelectronics Applications

 

Item
Specifications
Remarks
Conduction Type
Insulating
 
Growth Method
VGF
 
Dopant
Undoped
 
Wafer Diamter
2, 3, 4 & 6 inch
Ingot available
Crystal Orientation
(100)+/- 0.5°
 
OF
EJ, US or notch
 
Carrier Concentration
n/a
 
Resistivity at RT
>1E7 Ohm.cm
 
Mobility
>5000 cm2/V.sec
 
Etch Pit Density
<8000 /cm2
 
Laser Marking
upon request
 
Surface Finish
P/P
 
Thickness
350~675um
 
Epitaxy Ready
Yes
 
Package
Single wafer container or cassette
 

 

 

packing

2inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type 02inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type 12inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type 2


ABOUT OUR ZMKJ

     ZMKJ locates in the city of Shanghai, Which is the best city of China, and our factory is founded
in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates
and custiomized optical glass parts.components widely used in electronics, optics,
optoelectronics and many other fields. We also have been working closely with many domestic
and oversea universities, research institutions and companies, provide customized products
and services for their R&D projects.
   It's our vision to maintaining a good relationship of cooperation with our all customers by our
  good reputatiaons. so we also can provide some other materials substrates as like:
 
Related products: GE wafer
2inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type 32inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type 4
Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process!
2inch Single Crystal Gallium Arsenide Substrates Semiconductor N Type 5
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and  by FOB
 and pay condition of 50% deposit,50% before delivery.
 
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.

 

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.

 

Contact Us at Any Time

86-1580-1942596
Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Send your inquiry directly to us