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4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys

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4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys

4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys
4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys 4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys

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Product Details:
Place of Origin: china
Brand Name: zmsh
Certification: no
Model Number: GaAs-4inch
Payment & Shipping Terms:
Minimum Order Quantity: 5pcs
Price: by case
Packaging Details: 25pcs casstle in 100-grade cleaning room
Delivery Time: 1-4weeks
Supply Ability: 1000pcs/month

4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys

Description
Material: GaAs Single Crystal Substrates Industry: Semicondutor Wafer
Application: Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates Method: VFG
Size: 2-6inch Commen
High Light:

indium arsenide wafer

,

laalo3 substrate

4inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer

(A compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure)

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About GaAs crystal

Product Name: Gallium arsenide (GaAs) crystal substrate
Technical parameters:
Monocrystalline Gallium arsenide (GaAs)
Doping None; Si; Cr; Te; Zn
Conductivity type SI; N; Si; N; P
Cm -3 carrier concentration /> 5x10 17 / ~ 2x10 18> 5x10 18
Cm -2 dislocation density <5x10 5
Growth method and the maximum size LEC & HB Ø3 "
Specifications:

General orientation: <100>: <110>: <111>:

Standard Size: Ø3 "x 0.5mm; Ø2" x 0.5mm ; Ø4 "x 0.5mm ;

Note: according to customers' requirements and size of the corresponding direction.

 

Application:

1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.

 

2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.

 

3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.

4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys 0

 

Specification

 

GaAs Wafers for LED Applications

 

Item Specifications Remarks
Conduction Type SC/n-type SC/p-type with Zn dope Available
Growth Method VGF  
Dopant Silicon Zn available
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut availalbe
Crystal Orientation (100)20/60/150 off (110) Other misorientation available
OF EJ or US  
Carrier Concentration (0.4~2.5)E18/cm3  
Resistivity at RT (1.5~9)E-3 Ohm.cm  
Mobility 1500~3000cm2/V.sec  
Etch Pit Density <5000/cm2  
Laser Marking upon request  
Surface Finish P/E or P/P  
Thickness 220~450um  
Epitaxy Ready Yes  
Package Single wafer container or cassette

 

(GaAs)Gallium Arsenide Wafers for LD Applications

 

Item Specifications Remarks
Conduction Type SC/n-type  
Growth Method VGF  
Dopant Silicon  
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)20/60/150 off (110) Other misorientation available
OF EJ or US  
Carrier Concentration (0.4~2.5)E18/cm3  
Resistivity at RT (1.5~9)E-3 Ohm.cm  
Mobility 1500~3000 cm2/V.sec  
Etch Pit Density <500/cm2  
Laser Marking upon request  
Surface Finish P/E or P/P  
Thickness 220~350um  
Epitaxy Ready Yes  
Package Single wafer container or cassette

 

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

 

Item Specifications Remarks
Conduction Type Insulating  
Growth Method VGF  
Dopant Undoped  
Wafer Diamter 2, 3 & 4 inch Ingot available
Crystal Orientation (100)+/- 0.50  
OF EJ, US or notch  
Carrier Concentration n/a  
Resistivity at RT >1E7 Ohm.cm  
Mobility >5000 cm2/V.sec  
Etch Pit Density <8000 /cm2  
Laser Marking upon request  
Surface Finish P/P  
Thickness 350~675um  
Epitaxy Ready Yes  
Package Single wafer container or cassette

 

4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys 1

 

FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics

Q: Do you have inspection report for material?
We can supply detail report  for our products.
 

Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product , we will take a different packaging process!

4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys 2

 

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

Tel: +8615801942596

Send your inquiry directly to us (0 / 3000)