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Sapphire Tubes for High-Temperature Thermocouples       Abstract ZMSH's sapphire tubes are the material of choice for protecting high-temperature thermocouples in corrosive environments.   Single-crystal sapphire tubes are the ultimate durable alternative to polycrystalline alumina ceramics (alumina ceramic tubes). Unlike ceramics, single-crystal sapphire provides 100% hermeticity and superior corrosion resistance. Customers benefit from enhanced reliability, extended thermocouple replacement intervals (typically 4x longer), and reduced system downtime.           Key Attributes   · 100% Hermeticity – No porosity, perfect environmental isolation prevents atmospheric diffusion to the thermocouple. · Exceptional Corrosion Resistance – Withstands aggressive chemical environments. · Operating Temperatures up to 2000°C – Sapphire retains its properties and shape near its melting point, unlike ceramics, which warp at high temperatures. · High Pressure Resistance – Typically endures pressures of tens of bars. · Superior Electrical Insulation – Ideal for precision measurements.     Sapphire Thermocouple Assembly The kit consists of an externally sealed sapphire tube and one or more internal capillary tubes to insulate thermocouple branches.     Thermocouple Wire Protection Thermocouple branches must be electrically insulated and shielded from high-temperature corrosion. Even trace contaminants (e.g., lead) drastically reduce thermocouple lifespan. Traditional ceramic/metal sheaths are vulnerable to metal diffusion, whereas sapphire tubes provide unmatched resistance.     Example:     Lead oxide diffuses through multiple ceramic tubes.           The lead oxide is prevented by the single-crystal sapphire tube outside the protective tube. The inner tube remains intact.           Sapphire-protected thermocouples far outlast standard ceramic tubes. Even small-diameter sapphire tubes offer robust high-temperature performance, making them a cost-effective solution for:     · Oil refineries · Cracking units · Combustion reactors · Incinerators · Chemical processing · Glass manufacturing · Semiconductor industry (clean process handling)     After 25 months, the probe was inserted into a flowing stream of molten lead at a temperature of 1170°C.           The probe was placed in a glass furnace crown at 1500°C for 11 months. There were no signs of wear.           The probe retracted from the vaporization device.           Sapphire Thermocouple Designs     Outside diameter / Inside diameter Maximum length   Temperature measurement in different depth areas is available with insulating the thermocouple wires within the protection sapphire tube with sapphire capillaries   2.1 / 1.3 mm ± 0.2 mm 1750 mm 4.8 / 3.4 mm ± 0.15 mm 1800 mm 6 / 4 mm ± 0.15 mm 1800 mm 8 / 5 mm ± 0.15 mm 1800 mm 10 / 7 mm ± 0.2 mm 1400 mm 13 / 10 mm ± 0.2 mm 1400 mm   Sapphire tubes are sealed by contininuing the crystal growing process. This assures flawless material inegrity and faultless structure throughout the whole thermocouple tube.       Conclusion Sapphire tubes for high-temperature thermocouples deliver unrivaled thermal stability, corrosion resistance, and hermeticity, forming the foundation of extreme-environment temperature measurement. Yet, true reliability stems from end-to-end service support—ZMSH not only supplies scenario-optimized sapphire tubes but also provides a full-cycle "Requirement-Validation-Delivery-Maintenance" service framework: from operational diagnostics and customized sizing guidance to on-site installation and long-term performance tracking. Backed by a technical team, we ensure every sapphire tube operates at peak efficiency within your systems.   Choosing ZMSH’s sapphire tubes means selecting dual assurance—material excellence + service commitment—driving cost efficiency and precision in high-temperature applications.       The following products are custom-made sapphire tubes by ZMSH:               Custom Solutions by ZMSH   For bespoke sapphire tube or high-temperature thermocouple designs, contact us—ZMSH delivers precision-engineered solutions tailored to your needs.      

Understand the film preparation (MOCVD, magnetron sputtering, PECVD) technology       This article will introduce several methods for fabricating thin films. In semiconductor processing, the most frequently mentioned techniques are lithography and etching, followed by the epitaxy (film) process.   Why is thin-film technology necessary in chip manufacturing?   For instance, in daily life, many people enjoy eating pancakes. If a square-shaped pancake is not seasoned and baked, it won't have any flavor and the texture won't be good. Some people prefer a salty taste, so they brush a layer of bean paste on the surface of the pancake. Others prefer a sweet taste, so they brush a layer of malt sugar on the surface.   After brushing the sauce, the layer of salty or sweet sauce on the surface of the pancake is like a film. Its presence alters the taste of the entire pancake, and the pancake itself is called the base.   Of course, during the chip processing, there are many types of functions for the films, and corresponding film preparation methods also vary. In this article, we will briefly introduce several common film preparation methods, including MOCVD, magnetron sputtering, PECVD, etc....     I. Metal Organic Chemical Vapor Deposition (MOCVD)     The MOCVD epitaxial growth system is a highly complex and sophisticated device, which plays a crucial role in the preparation of high-quality semiconductor films and nanostructures.   The MOCVD system consists of five core components, each of which performs distinct but interrelated functions, collectively ensuring the efficiency and safety of the material growth process.   1.1 Gas Transport System: The main responsibility of this subsystem is to precisely control the delivery of various reactants to the reaction chamber, including the measurement of reactants, the timing and sequence of their delivery, as well as the regulation of the total gas flow rate.   It is composed of several subsystems, including the gas supply subsystem for carrying the reactants, the supply subsystem for providing metal organic (MO) sources, the supply subsystem for supplying hydrides, and the growth/venting multiplex valve for controlling the gas flow direction. As shown in the figure below, it is the gas path schematic diagram of the MOCVD growth system.       AIXTRON CCS 3 x 2" Research-grade Nitride MOCVD System       Schematic diagram of the gas path of the MOCVD system   1.2 Reaction Chamber System: This is the core component of the MOCVD system, responsible for the actual material growth process.   This section includes a graphite base for supporting the substrate, a heater for heating the substrate, a temperature sensor for monitoring the temperature of the growth environment, an optical detection window, and an automatic loading and unloading robot for handling the substrate. The latter is used to automate the loading and unloading process, thereby improving production efficiency. The figure below shows the heating state diagram of the MOCVD reactor chamber.       Schematic diagram of the in-chamber growth principle of MOCVD   1.3 Growth Control System: Composed of a programmable controller and a control computer, it is responsible for the precise control and monitoring of the entire MOCVD growth process.   The controller is responsible for collecting, processing and outputting various signals, while the control computer is responsible for recording and monitoring each stage of material growth, ensuring the stability and repeatability of the process.       1.4 In-situ Monitoring System: It consists of reflectance-corrected infrared radiation thermometers, reflectance monitoring equipment, and warpage monitoring devices.   This system can monitor the key parameters during the material growth process in real time, such as the thickness and uniformity of the film, as well as the temperature of the substrate. Thus, it enables immediate adjustments and optimizations of the growth process.     1.5 Exhaust Gas Treatment System: Responsible for handling the toxic particles and gases generated during the reaction process.   By means of methods such as cracking or chemical catalysis, these harmful substances can be effectively decomposed and absorbed, ensuring the safety of the operating environment and compliance with environmental protection standards.   Furthermore, MOCVD equipment is usually installed in ultra-clean rooms equipped with advanced safety alarm systems, effective ventilation devices, and strict temperature and humidity control systems. These auxiliary facilities and safety measures not only ensure the safety of the operators, but also enhance the stability of the growth process and the quality of the final products.   The design and operation of the MOCVD system reflect the high standards of accuracy, repeatability and safety required in the field of semiconductor material fabrication. It is one of the key technologies for manufacturing high-performance electronic and optoelectronic devices.   The vertical type close-coupled spray head (Closed-Coupled-Showerhead, CCS) MOCVD system in the equipment chamber is used for growing epitaxial films.   This system is designed with a unique spray head structure. Its core feature lies in the ability to effectively reduce pre-reactions and achieve efficient gas mixing. These gases are injected into the reaction chamber through the interlaced spray holes on the spray head, where they fully mix and thereby improve the uniformity and efficiency of the reaction.   The spray head structure design enables the reaction gas to be evenly distributed onto the substrate located beneath it, ensuring the consistency of the reaction gas concentration at all positions on the substrate. This is crucial for forming an epitaxial film with uniform thickness.   Furthermore, the rotation of the graphite disk further promotes the uniformity of the chemical reaction boundary layer, enabling a more uniform growth of the epitaxial film. This rotational mechanism, by reducing the boundary layer of the thin chemical reaction, helps to minimize local concentration differences, thereby enhancing the overall uniformity of the film growth.       (a) The actual spray head and its partial enlarged photo, (b) The internal structure intention of the spray head         II. Magnetron Sputtering     Magnetron sputtering is a physical vapor deposition technique commonly used for thin film deposition and surface coating.   It uses a magnetic field to release the atoms or molecules of a target material from the surface of the target, and then forms a film on the surface of the substrate material.   This technology is widely applied in the manufacturing of semiconductor devices, optical coatings, ceramic coatings, and other fields.       Schematic diagram of the magnetron sputtering principle       The principle of magnetron sputtering is as follows:   1. Target material selection: The target material is the material that is to be deposited onto the substrate material. It can be metals, alloys, oxides, nitrides, etc. The target material is usually fixed on a device called a target gun.   2. Vacuum environment: The sputtering process must be carried out in a high vacuum environment to prevent the interaction between gas molecules and the target material. This helps to ensure the purity and uniformity of the deposited film.   3. Ionized gas: During the sputtering process, an inert gas (such as argon) is usually introduced to ionize it into a plasma. These ions, under the influence of a magnetic field, form an electron cloud, which is called "electron cloud plasma".   4. Magnetic field application: A magnetic field is applied between the target material and the substrate material. This magnetic field confines the electron cloud plasma to the surface of the target material, thereby maintaining a high energy state.   5. Sputtering process: By applying a high-energy electron cloud plasma, the atoms or molecules of the target material are struck, thereby being released. These released atoms or molecules will deposit in the form of vapor on the surface of the substrate material, forming a film.     The advantages of magnetron sputtering include:   1. Uniformity of the deposited film: The magnetic field can help control the transmission of ions, thereby achieving uniform film deposition, ensuring that the thickness and properties of the film remain consistent throughout the entire substrate surface.   2. Preparation of complex alloys and compounds: Magnetron sputtering can be used to fabricate complex alloy and compound films, which may be more difficult to achieve through other deposition techniques.   3. Controllability and modifiability: By adjusting parameters such as the composition of the target material, gas pressure, and deposition rate, the properties of the film, including thickness, composition, and microstructure, can be precisely controlled.   4. High-quality films: Magnetron sputtering can typically produce high-quality, dense and uniform films with excellent adhesion and mechanical properties.   5.Multi-functionality: It is applicable to various material types, including metals, oxides, nitrides, etc. Therefore, it has wide applications in different fields.   6. Low-temperature deposition: Compared with other techniques, magnetron sputtering can be carried out at low temperatures or even at room temperature, making it suitable for applications where the substrate material is temperature-sensitive.   Overall, magnetron sputtering is a highly controllable and flexible thin film fabrication technology, applicable to a wide range of application fields, from electronic devices to optical coatings, etc.     III. Plasma Enhanced Chemical Vapor Deposition     Plasma Enhanced Chemical Vapor Deposition (PECVD) technology is widely used in the preparation of various films (such as silicon, silicon nitride and silicon dioxide, etc.).   The structural diagram of the PECVD system is shown in the following figure.       Schematic diagram of the plasma-enhanced chemical vapor deposition system structure   The basic principle is as follows: Gaseous substances containing the components of the film are introduced into the deposition chamber. Using plasma discharge, the gaseous substances undergo chemical reactions to generate plasma. When this plasma is deposited on the substrate, a film material is grown.   The methods for initiating glow discharge include: radio frequency excitation, direct current high voltage excitation, pulse excitation and microwave excitation.   The thickness and composition of the films prepared by PECVD exhibit excellent uniformity. Moreover, the films deposited by this method have strong adhesion and can achieve high deposition rates at relatively low deposition temperatures.   Generally speaking, the growth of thin films mainly involves the following three processes:   The first step is that the reactive gas, under the excitation of the electromagnetic field, undergoes a glow discharge to generate plasma.   During this process, electrons collide with the reactive gas, initiating a primary reaction, which leads to the decomposition of the reactive gas and the generation of ions and reactive groups.   The second step is that the various products generated from the primary reaction move towards the substrate, while various active groups and ions undergo secondary reactions to form secondary products.   The third step involves the adsorption of various primary and secondary products on the substrate surface and their subsequent reaction with the surface. Concurrently, there is the release of gaseous molecular substances.       IV. Thin Film Characterization Techniques     4.1 X-ray Diffraction (XRD)   XRD (X-ray Diffraction) is a commonly used technique for analyzing crystal structures.   It reveals information such as the lattice parameters, crystal structure and crystal orientation of the material by measuring the diffraction patterns of X-rays on the crystal structure within the material.   XRD is widely used in various fields such as materials science, solid-state physics, chemistry, and geology.       Schematic diagram of XRD testing principle   Working principle: The basic principle of XRD is based on the Bragg law. That is, when an incident beam is shone onto a crystal sample, if the atomic or ionic lattice in the crystal is in a specific arrangement, X-rays will be diffracted. The angle and intensity of the diffraction can provide information about the structure of the crystal.       Bruker D8 Discover X-ray diffractometer   Instrument composition: A typical XRD instrument consists of the following components:   1. X-ray source: A device that emits X-rays, usually using tungsten or copper targets to generate X-rays.   2. Sample platform: A platform for placing samples, which can be rotated to adjust the angle of the samples.   3. X-ray detector: Used to measure the intensity and angle of diffraction light.   4. Control and Analysis System: This includes the software system for controlling the X-ray source, data acquisition, analysis, and interpretation.     Application fields: XRD has important applications in many fields, including but not limited to:   1. Crystallographic research: Used to analyze the crystal structure of crystals, determine lattice parameters and crystal orientation.   2. Material Characterization: Analyze information such as the crystal structure, phase composition, and crystal defects of the material.   3. Chemical Analysis: Identify the crystal structures of inorganic and organic compounds, and study the interactions between molecules.   4. Film analysis: This is used to study the crystal structure, thickness, and lattice matching of the film.   5. Mineralogy and Geology: Used for identifying the types and contents of minerals, and studying the composition of geological samples.   6. Drug Research: Analyzing the crystal structure of a drug is helpful in understanding its properties and interactions.   Overall, XRD is a powerful analytical technique that enables scientists and engineers to gain a deep understanding of the crystal structure and properties of materials, thereby promoting research and applications in materials science and related fields.       Photo of the XRD diffractometer       4.2 Scanning Electron Microscope (SEM)   The scanning electron microscope (SEM) is a commonly used type of microscope. It uses an electron beam instead of a light beam to illuminate the sample, enabling high-resolution observation of the surface and morphology.   SEM is widely used in fields such as materials science, biology, and geology.     The basic working principle of SEM is as follows:   SEM uses an electron gun to generate an electron beam. This electron gun is similar to the one found in an electron tube (CRT), generating high-energy electrons. The electron beam passes through a collimation system, which consists of a series of electron lenses, to focus and align the electron beam, ensuring the stability and focus of the beam. Under the control of the scanning coil, the electron beam scans the surface of the sample.   The position of the electron beam can be precisely controlled, thereby generating scanning pixels on the sample.   The sample is placed on the sample stage of the SEM. The sample needs to be conductive because in the SEM, the electron beam needs to interact with the sample surface to generate secondary electrons, etc. When high-energy electron beams hit the sample surface, they interact with the atoms and molecules in the sample. These interactions cause the scattering, escape, and excitation of electrons, generating various signals. The SEM detection analyzes the various signals generated from the sample surface, mainly including secondary electrons (SE) and backscattered electrons (BSE).   These signals provide information about the surface morphology, structure and composition of the sample. By controlling the scanning position of the electron beam on the sample, SEM can obtain the pixel information of the sample surface. These information are processed and displayed by a computer, generating high-resolution images of the sample surface.       SEM physical image       4.3 Atomic Force Microscope (AFM)   Atomic Force Microscope (AFM) is a high-resolution microscopic technique, mainly used to observe the atomic-scale and nanoscale features of samples. Its working principle is based on the interaction between the probe and the sample surface. By measuring the position changes of the probe, it can obtain the topography and topological information of the sample surface.   In AFM, a very fine probe, usually made of silicon or other materials with a nanoscale tip, is used. The probe is connected to the scanning head through a cantilever or a piezoelectric device, with the tip of the probe close to the sample surface. When the probe is close to the sample surface, interactions occur between the atoms and molecules of the sample and the probe, including electrostatic forces, van der Waals forces, and chemical bond interactions, etc. The movement of the cantilever or piezoelectric device is controlled to maintain a certain force between the probe tip and the sample surface.   AFM employs a feedback system to maintain a constant force between the probe and the sample. When the height or position of the probe changes, the feedback system automatically adjusts the position of the cantilever to keep the force constant. The probe and the sample move relative to each other, usually on a two-dimensional grid, forming a scan. At each scan point, the unevenness of the sample surface causes the position of the probe tip to change. By measuring the position change of the probe, topological information of the sample surface can be obtained. Finally, the collected data is processed to generate a high-resolution topological image of the sample surface.   AFM has extensive applications in multiple fields. It is used in areas such as materials science, biology, and nanotechnology, helping researchers gain a deeper understanding of the surface morphology and structure of materials, and even enabling the manipulation of nano-scale structures.   The advantages of AFM include high resolution, non-destructiveness and multiple working modes, making it a powerful tool for observing and researching at the nanoscale.       AFM physical image       Schematic diagram of the measurement principle and working mode of atomic force microscopy       Conclusion     ZMSH specialize in advanced thin-film deposition technologies, including MOCVD, Magnetron Sputtering, and PECVD, offering tailored process development for semiconductor, optoelectronics, and functional coating applications. Our services cover customized system design, parameter optimization, and high-purity film growth, along with sales of precision deposition equipment to meet R&D and industrial production needs.       Here are the recommended SiC products by ZMSH:                 * Please contact us for any copyright concerns, and we will promptly address them.      

Silicon carbide illuminates AR glasses, instantly opening up an unbounded world of vision     In today's rapidly evolving technology era, AR technology is gradually becoming a new generation of productivity tool that changes our lifestyle. AR is the abbreviation of Augmented Reality, and AR glasses enable the wearer to superimpose virtual scenes on the real world and achieve the integration and interaction of virtual and real elements through sensing and computing.   Imagine one day that you could, like the Iron Man in a science fiction movie, put on a pair of sleek and stylish glasses, and instantly be able to see all kinds of relevant information without any obstruction to your vision.     Use silicon carbide to make the lenses     Silicon carbide (SiC) is actually a type of semiconductor material. It was included in the "Top 100 Scientific Words of 2023" released by the Publicity Department of the China Association for Science and Technology. Traditionally, it has been used as an industrial raw material in fields such as refractory materials and metallurgical raw materials.   Micro-nano optics is an emerging discipline that manipulates optical phenomena at the microscopic scale. It has brought new technical solutions to optical devices and technologies such as AR lenses. To meet industry demands and promote the implementation of scientific research results, we focus on the research and development of products such as AR diffractive optical waveguides, diffractive optical elements, and metamaterial optical devices. The technological breakthrough from 0 to 1 in high-end nano-imprinting templates in China has filled the gap in the domestic AR industrial chain.   Combining the micro-nano optical technology strength with the perfect material properties, this ultra-thin silicon carbide AR glasses have been created and have moved out of the laboratory to enter the public's view.   At first glance, this pair of glasses looks no different from ordinary ones. But after wearing them, it feels that they are even much thinner and lighter than the ordinary glasses usually worn.             Lighter and clearer     This pair of glasses makes science fiction come true     A vivid application scenario: "Put on the AR glasses, and others might only see you sitting down. In fact, you are already watching a movie." "If the interactive function is added, when you look at the people around you, their names and information will appear near their heads, allowing you to bid farewell to face blindness forever. Wearing these glasses, you can recognize everyone and also every plant and flower."   Imagine a pair of AR glasses lenses with a weight of only 5.4 grams and a thickness of only 0.55 millimeters. They are almost as lightweight as the sunglasses you usually wear. Unlike traditional multi-layer high-refractive-index glass lenses, thanks to the ultra-high refractive index of silicon carbide material, this new technology can complete full-color display tasks with just a single layer of waveguide. This not only significantly reduces the weight of the lenses, but also further compresses the volume through ultra-thin packaging technology, making the wearer hardly feel its presence.   After wearing these AR glasses, you will feel as if you have entered a completely new world, because they can superimpose clear and extensive virtual images on top of the real environment, just like changing from a small window to a large door. The single-layer silicon carbide waveguide theoretically can support full-color imaging of 80 degrees, far exceeding the maximum full-color field of view angle of 40 degrees that traditional high-refractive-index glass can provide. A larger field of view means better immersion and experience. Whether it's the fantastical scenes in a game or the data visualization at work, it will bring an unprecedented visual feast.             Regarding the concern of many people about the "rainbow pattern" phenomenon, this time we introduce the solution. The rainbow pattern actually occurs because the ambient light passing through the surface of the waveguide undergoes diffraction effect, creating a similar rainbow-like effect. By precisely designing the waveguide structure, this problem has been completely eliminated, presenting users with a clean and clear picture. At the same time, by taking advantage of the excellent thermal conductivity of silicon carbide material, this pair of glasses innovatively uses the lenses for heat dissipation, significantly improving the heat dissipation efficiency, making full-color full-frame display no longer an unrealistic expectation.   Meanwhile, unlike previous models that required multiple layers of waveguides to achieve full-color effects, this silicon carbide AR glasses only need one waveguide to present a rich variety of content. Moreover, it innovatively eliminates the need for a cover glass. This significantly simplifies the production process and enables more people to enjoy the convenience brought by this cutting-edge technology.   As more and more similar innovative solutions keep emerging, we can foresee that in the near future, AR technology will truly integrate into daily life, ushering in a new era full of unlimited possibilities. Whether in education, healthcare, entertainment or industrial fields, AR glasses will become the bridge connecting the digital and the real world.   Regarding the silicon carbide AR glasses, do you have any other questions?   Q1: What are the differences between the silicon carbide AR glasses released this time and Apple Vision Pro?   A1: Vision Pro is a mixed reality (MR) product that combines VR and AR. It is relatively bulky. Due to its reliance on cameras to import external images, it may cause distortion or dizziness. In contrast, AR glasses are designed with transparent lenses, mainly presenting the real world and adding virtual elements only when necessary, reducing the sense of dizziness and striving for a lighter and more comfortable wearing experience.     Q2: Can people with myopia wear AR glasses? Can silicon carbide lenses be compatible with AR functions and myopia correction?   A2: There are various ways to correct myopia, such as fitting the lens closely with the myopic lens, or using new technologies like Fresnel lenses. Our ultimate goal in the future is to customize solutions based on individual needs.   Q3: Is the SiC (silicon carbide) material expensive? Can people afford eyeglasses made with this material?   A3: Although the current price of silicon carbide lenses is relatively high, for example, a four-inch lens we use for making the lenses costs about two to three thousand yuan, and a six-inch lens costs about three to four thousand yuan. However, as the technology becomes more mature and large-scale production is achieved, it is expected that the price of silicon carbide lenses will significantly decrease in the future.   For instance, we currently use LED lights. The substrate used in LED bulbs is sapphire. Sapphire was originally very expensive, but its current price has dropped from several thousand yuan per piece to just a few tens of yuan. If our silicon carbide AR glasses can be widely adopted, with an annual production of several hundred thousand or several million pieces, I believe their price will also drop from several thousand yuan to several hundred yuan, and perhaps one day it could even reach just a few tens of yuan.     Conclusion   As an innovator in the field of silicon carbide photonic devices, ZMSH specializes in the R&D and mass production of 4H-SiC superlenses and AR waveguide technologies. Leveraging in-house developed nanoimprint lithography processes and wafer-level processing capabilities, we provide silicon carbide AR lenses with high thermal conductivity (120 W/m·K), ultra-thin profiles (0.55mm), and zero-rainbow display performance, suitable for applications such as industrial inspection and medical surgery. We support full-process customization, ranging from material selection (e.g., 6-inch SiC wafers) to optical design, and via wafer-level packaging technology, we achieve a 100x improvement in heat dissipation performance. Collaborating with leading manufacturers such as Tianke Heada, we drive the mass production of 8-inch large-size substrates, helping customers reduce material costs by 40%.     ZMSH's SiC substrate 4H-semi type       * Please contact us for any copyright concerns, and we will promptly address them.      

Synthetic Ruby Laser Rod – A Cornerstone of Laser Innovation       Lasers are now fundamental tools across various sectors—from healthcare and communications to industrial automation and scientific discovery. Among all laser types developed over the past decades, the ruby laser holds a landmark position in history, being the first successfully demonstrated laser system. At its core is the synthetic ruby laser rod, a solid-state gain medium that enables the generation of coherent, powerful red light. This article delves into the science behind ruby laser rods, their structure, operating principles, and their enduring significance in laser technology.   1. What Is a Ruby Laser Rod? A ruby laser rod is a cylindrical crystal made of synthetic ruby, which is essentially aluminum oxide (Al₂O₃) doped with a small concentration of chromium ions (Cr³⁺). While pure Al₂O₃ is transparent, the addition of chromium gives ruby its distinctive red or pink hue and, more importantly, creates the active centers necessary for laser action. In a laser system, the active medium is the material responsible for light amplification through the process of stimulated emission. In ruby lasers, the synthetic ruby rod functions as this active medium, absorbing energy and converting it into intense, coherent red light. 2. Physical Structure of the Ruby Laser Rod Ruby laser rods are typically fabricated into cylindrical shapes, with diameters ranging from a few millimeters up to 10 mm, and lengths between 30 to 150 mm depending on application requirements. This geometry optimizes internal light reflection and gain within the laser cavity.   The doping concentration of Cr³⁺ ions is usually around 0.05%, a carefully calibrated level that balances absorption efficiency and light emission. The chromium atoms are introduced during crystal growth, replacing some aluminum atoms in the sapphire lattice to form the lasing centers. 3. Working Principle of the Ruby Laser Rod 3.1 Excitation of Chromium Ions The ruby laser is a flashlamp-pumped solid-state laser. When high-energy light from a xenon flashlamp irradiates the ruby rod, the Cr³⁺ ions absorb photons, particularly in the green and blue regions of the visible spectrum. This excitation process raises electrons to higher energy levels. 3.2 Metastable State and Population Inversion After excitation, electrons in Cr³⁺ ions drop to a metastable state, where they can stay for microseconds without losing energy. This delay enables the buildup of a population inversion—a condition in which more electrons occupy the excited state than the ground state. This is a prerequisite for stimulated emission to occur. 3.3  Stimulated Emission and Laser Output When a photon of the correct wavelength (694.3 nm, deep red) interacts with an excited Cr³⁺ ion, it triggers the emission of a second photon in perfect phase and direction—coherent light. This chain reaction of photon generation is what produces the powerful laser beam. 3.4 Optical Resonator and Amplification The ruby rod is placed between two mirrors forming a resonant optical cavity. One mirror is fully reflective, and the other is partially transmissive. Light reflects multiple times through the rod, stimulating further emissions, until the coherent light exits as a narrow laser beam from the output coupler. 4. Pioneering Role in Laser History The ruby laser made history in 1960, when physicist Theodore Maiman first demonstrated its operation at Hughes Research Laboratories. It was the first device to turn the theoretical concept of LASER (Light Amplification by Stimulated Emission of Radiation) into reality. This breakthrough laid the groundwork for decades of optical innovation and positioned the ruby laser as the foundation of all laser technologies. 5. Advantages and Disadvantages of Ruby Lasers 5.1 Advantages i. Simple Design Ruby lasers are structurally straightforward, making them accessible for education, prototyping, and research.. ii. Durable Solid-State Medium The synthetic ruby rod is mechanically robust, chemically stable, and less sensitive to environmental conditions than gas or dye lasers. iii. Excellent Beam Quality Produces a tightly collimated, coherent red beam with high spatial resolution—ideal for holography and certain medical applications. iv. Historic Importance Ruby lasers represent a technological milestone and remain a symbol of laser innovation. 6. Applications of Ruby Lasers Although surpassed by modern laser types like Nd:YAG, fiber, or diode lasers, ruby lasers are still used in niche areas where their specific wavelength and pulsed output are advantageous: Holography Coherent, stable red light is ideal for recording interference patterns with high precision. Medical Dermatology Ruby lasers have been used for tattoo removal, pigmentation treatment, and skin resurfacing due to their short, high-energy pulses. Material Science Research Utilized in studies involving light-matter interaction, laser-induced breakdown, and pulsed heating experiments. Early LIDAR and Rangefinding High-energy red pulses are effective for measuring long distances and detecting surfaces with precision. Conclusion The synthetic ruby laser rod remains an iconic component in the history of laser technology. By harnessing the energy dynamics of chromium-doped sapphire, it enabled the first successful demonstration of coherent light amplification. While newer technologies have taken its place in mainstream applications, the ruby laser's influence persists in both scientific heritage and specialized use cases. It serves not only as a functional tool but also as a symbol of scientific ingenuity and the beginning of the laser age.

Notes on High-Energy Lasers and SiC Optical Components —  Surface Processing Techniques   Why Silicon Carbide for High-Energy Laser Optics?   Silicon carbide (SiC) crystals can withstand temperatures up to 1600 °C, possess high hardness, exhibit minimal deformation at high temperatures, and offer excellent transparency from visible red light to infrared wavelengths. These properties make SiC an ideal material for high-power laser modules, optical reflectors, collimating optics, and transmission windows.     Changing Landscape of High-Energy Laser Design   In the past, most high-power laser systems were based on ultrashort-pulse fiber lasers or large-scale reflector-based focusing lasers. However, these setups often suffered from limited beam directionality, energy density, and thermal loading.   Recent trends in laser system development demand: Higher energy outputs Long-range beam propagation Tighter beam divergence and collimation Lightweight and compact optical modules   SiC-based optics are now gaining traction as a solution to these evolving requirements—enabled by recent progress in crystal growth and ultra-precision fabrication technologies.     SiC Optics: From Theory to Application   With the maturation of SiC component processing—and even diamond crystal optics beginning to emerge—the future looks promising for industrial-scale deployment.     Crossroads with AR Optics and Nanostructuring Challenges The microfabrication challenges in SiC laser optics are remarkably similar to those in SiC-based AR waveguides:       All on 4-inch / 6-inch / 8-inch SiC wafers with:   Creating anti-reflective (AR) nanostructures Enhancing transmission or reflection efficiency Patterning sub-wavelength grating structures 100–500 nm periodicity Nanometer-scale depth precision   Not easy tasks—especially on a material as hard and chemically inert as SiC.   Global Research Landscape Institutions like Westlake University, Harvard, and others have started exploring this field.     One of the biggest hurdles? Even if the SiC wafers are affordable, how do you etch sub-micron periodic nanostructures on such a hard material without destroying it?     Throwback: Etching SiC a decade ago Over a decade ago a 4-inch SiC wafer cost over 10,000 RMB, and etching even one was a painful process. But guess what? It worked.     We achieved sub-wavelength anti-reflective (AR) structures on SiC that reduced surface reflectance by more than 30%—without using any photolithography tools.

An Introduction to Epitaxy Deposition Techniques in Semiconductor Manufacturing   In semiconductor processing, photolithography and etching are often the most commonly discussed steps. But right alongside them is another crucial category: epitaxy deposition.   Why are these deposition processes essential in chip manufacturing? Here’s an analogy: imagine a plain, square flatbread. Without any topping, it’s bland and unremarkable. Some people prefer putting peanut better on the surface; others prefer it sweet and spread syrup. These coatings dramatically change the taste and character of the flatbread. In this analogy, the flatbread represents the substrate, and the coating represents a functional layer. Just as different toppings create different flavors, different deposited films impart entirely different electrical or optical properties to the base wafer.   In semiconductor fabrication, a wide range of functional layers are deposited onto wafers to build devices. Each type of layer requires a specific deposition method. In this article, we briefly introduce several widely used deposition techniques, including: MOCVD (Metal-Organic Chemical Vapor Deposition) Magnetron Sputtering PECVD (Plasma-Enhanced Chemical Vapor Deposition)     1. Metal-Organic Chemical Vapor Deposition (MOCVD)   MOCVD is a critical technique for the deposition of high-quality epitaxial semiconductor layers. These single-crystalline films serve as the active layers in LEDs, lasers, and other high-performance devices. A standard MOCVD system consists of five major subsystems, each playing an essential and coordinated role to ensure the safety, precision, and reproducibility of the growth process:       (1) Gas Delivery System This subsystem precisely controls the flow, timing, and ratio of various process gases introduced into the reactor. It includes: Carrier gas lines (commonly N₂ or H₂) Metal-organic precursor supply lines, often via bubblers or vaporizers Hydride gas sources (e.g., NH₃, AsH₃, PH₃) Gas switching manifolds for controlling growth/purge paths             (2) Reactor System The reactor is the core of the MOCVD system, where actual epitaxial growth occurs. It typically includes: A SiC-coated graphite susceptor that holds the substrate A heating system (e.g., RF or resistive heaters) to control substrate temperature Temperature sensors (thermocouples or IR pyrometers) Optical viewports for in-situ diagnostics Automated wafer handling systems for efficient substrate loading/unloading     (3) Process Control System The entire growth process is managed by a combination of: Programmable logic controllers (PLCs) Mass flow controllers (MFCs) Pressure controllers A host computer for recipe management and real-time monitoring These systems ensure precise control of temperature, flow rates, and timing across each stage of the process.   (4) In-Situ Monitoring System To maintain film quality and consistency, real-time monitoring tools are integrated, such as: Reflectometry systems for tracking epitaxial layer thickness and growth rate Wafer bow sensors to detect stress or curvature Infrared pyrometers with reflectivity compensation for accurate temperature measurement These tools allow for immediate process adjustments, improving uniformity and material quality.   (5) Exhaust Abatement System Toxic and pyrophoric byproducts generated during the process—such as arsine or phosphine—must be neutralized. The exhaust system typically includes: Burner-scrubbers Thermal oxidizers Chemical scrubbers These ensure compliance with safety and environmental standards.     Close-Coupled Showerhead (CCS) Reactor Configuration   Many advanced MOCVD systems adopt a Close-Coupled Showerhead (CCS) design, especially for GaN-based epitaxy. In this configuration, a showerhead plate injects group III and group V gases separately but in close proximity to the rotating substrate. This minimizes parasitic gas-phase reactions and enhances precursor utilization efficiency. The short distance between the showerhead and the wafer ensures uniform gas distribution across the wafer surface. Meanwhile, the rotation of the susceptor reduces boundary layer variation, further improving epitaxial layer thickness uniformity.         Magnetron Sputtering   Magnetron sputtering is a widely used physical vapor deposition (PVD) technique for fabricating functional layers and surface coatings. It employs a magnetic field to enhance the ejection of atoms or molecules from a target material, which are then deposited onto a substrate to form a thin film. This method is extensively applied in the manufacturing of semiconductor devices, optical coatings, ceramic films, and more.             Working Principle of Magnetron Sputtering   Target Material Selection The target is the source material to be deposited onto the substrate. It can be a metal, alloy, oxide, nitride, or other compound. The target is mounted onto a device known as a magnetron cathode.   Vacuum Environment The sputtering process is conducted under high vacuum conditions to minimize unwanted interactions between the process gases and ambient contaminants. This ensures the purity and uniformity of the deposited film.   Plasma Generation An inert gas, typically argon (Ar), is introduced into the chamber and ionized to form a plasma. This plasma consists of positively charged Ar⁺ ions and free electrons, which are essential for initiating the sputtering process.   Magnetic Field Application A magnetic field is applied near the target surface. This magnetic field traps electrons close to the target, increasing their path length and enhancing ionization efficiency—leading to a dense plasma region known as a magnetron plasma.   Sputtering Process The Ar⁺ ions are accelerated toward the negatively biased target surface, bombarding it and dislodging atoms from the target via momentum transfer. These ejected atoms or clusters then travel through the chamber and condense onto the substrate, forming a functional film layer.     Plasma-Enhanced Chemical Vapor Deposition (PECVD) Plasma-Enhanced Chemical Vapor Deposition (PECVD) is a widely used technique for depositing a variety of functional thin films, such as silicon (Si), silicon nitride (SiNx), and silicon dioxide (SiO₂). A schematic diagram of a typical PECVD system is shown below.   Working Principle In PECVD, gaseous precursors containing the desired film elements are introduced into a vacuum deposition chamber. A glow discharge is generated using an external power source, which excites the gases into a plasma state. The reactive species in the plasma undergo chemical reactions, leading to the formation of a solid film on the substrate surface. Plasma excitation can be achieved using different energy sources, including: Radio frequency (RF) excitation, Direct current (DC) high-voltage excitation Pulsed excitation Microwave excitation PECVD enables the growth of films with excellent uniformity in both thickness and composition. Additionally, this technique provides strong film adhesion and supports high deposition rates at relatively low substrate temperatures, making it suitable for temperature-sensitive applications.     Deposition Mechanism The PECVD film formation process typically involves three key steps:   Step 1: Plasma Generation Under the influence of an electromagnetic field, a glow discharge is initiated, forming a plasma. High-energy electrons collide with the precursor gas molecules, initiating primary reactions that break down the gases into ions, radicals, and active species.   Step 2: Transport and Secondary Reactions The primary reaction products migrate toward the substrate. During this transport, secondary reactions occur among the active species, generating additional intermediates or film-forming compounds.   Step 3: Surface Reaction and Film Growth Upon reaching the substrate surface, both primary and secondary species are adsorbed and react chemically with the surface, forming a solid film. Simultaneously, volatile by-products of the reaction are released into the gas phase and pumped out of the chamber.   This multi-step process enables precise control over film properties such as thickness, density, chemical composition, and uniformity—making PECVD a critical technology in semiconductor fabrication, photovoltaics, MEMS, and optical coatings.    

The "core strength" of semiconductor equipment - silicon carbide components       Silicon carbide (SiC) is an excellent structural ceramic material. Silicon carbide components, which are equipment components mainly made of silicon carbide and its composite materials, possess characteristics such as high density, high thermal conductivity, high bending strength, and large elastic modulus. They can adapt to the harsh reaction environments of strong corrosiveness and ultra-high temperatures in manufacturing processes such as wafer epitaxy, etching, etc. Therefore, they are widely used in main semiconductor equipment such as epitaxial growth equipment, etching equipment, oxidation/diffusion/annealing equipment, etc.   According to the crystal structure, silicon carbide has many crystal forms. Currently, the common types of SiC are mainly 3C, 4H and 6H. Different crystal forms of SiC have different applications. Among them, 3C-SiC is also commonly referred to as β-SiC. One important application of β-SiC is as a film and coating material. Therefore, at present, β-SiC is the main material used for graphite base coating.             According to the preparation process, silicon carbide components can be classified into chemical vapor deposition silicon carbide (CVD SiC), reaction sintering silicon carbide, recrystallization sintering silicon carbide, atmospheric pressure sintering silicon carbide, hot pressing sintering silicon carbide, and hot isostatic pressing sintering silicon carbide, etc.             Among the various methods for preparing silicon carbide materials, the chemical vapor deposition method produces products with high uniformity and purity, and this method also has strong process controllability. CVD silicon carbide materials are particularly suitable for use in the semiconductor industry due to their unique combination of excellent thermal, electrical and chemical properties.       The market size of silicon carbide components   01 CVD silicon carbide components   CVD silicon carbide components are widely used in etching equipment, MOCVD equipment, SiC epitaxial equipment, and rapid heat treatment equipment, among others.   Etching equipment: The largest market segment for CVD silicon carbide components is etching equipment. CVD silicon carbide components in etching equipment include focusing rings, gas spray heads, trays, edge rings, etc. Due to the low reactivity and conductivity of CVD silicon carbide towards chlorine- and fluorine-containing etching gases, it makes it an ideal material for components such as focusing rings in plasma etching equipment.       Silicon carbide focusing ring       Graphite base coating: Low-pressure chemical vapor deposition (CVD) is currently the most effective process for preparing dense SiC coatings. The CVD-SiC coating has the advantages of controllable thickness and uniformity. SiC coated graphite substrates are often used as components in metal organic chemical vapor deposition (MOCVD) equipment to support and heat single crystal substrates, and are the core key components of MOCVD equipment.       02 Reaction Sintering of Silicon Carbide Components   SiC materials subjected to reaction sintering (reaction melting infiltration or reaction bonding) can have a shrinkage rate of the sintering line controlled below 1%. At the same time, the sintering temperature is relatively low, which significantly reduces the requirements for deformation control and sintering equipment. Therefore, this technology has the advantage of facilitating the large-scale fabrication of components, and has been widely applied in the fields of optical and precision structure manufacturing.   For certain high-performance optical components in key manufacturing equipment for integrated circuits, there are strict requirements for material preparation. By using the method of reactive sintering of silicon carbide substrate combined with chemical vapor deposition of silicon carbide (CVDSiC) film layer to fabricate high-performance reflectors, by optimizing key process parameters such as precursor types, deposition temperature, deposition pressure, reaction gas ratio, gas flow field, and temperature field, large-area and uniform CVD SiC film layers can be prepared, enabling the mirror surface accuracy to approach the performance indicators of similar products from abroad.       Silicon carbide optical mirrors for lithography machines       The experts from the China Academy of Building Materials Science and Technology have successfully developed a proprietary preparation technology, enabling the production of large-sized, complex-shaped, highly lightweight, fully enclosed lithography machine-use silicon carbide ceramic square mirrors and other structural and functional optical components.       The performance of reaction-sintered silicon carbide developed by the China Academy of Building Materials Science and Technology is comparable to that of similar products from foreign enterprises.         At present, the companies that are leading in the research and application of precision ceramic components for the core equipment of integrated circuits abroad include Kyocera of Japan, CoorsTek of the United States, and BERLINER GLAS of Germany, among others. Among them, Kyocera and CoorsTek account for 70% of the market share of high-end precision ceramic components used in integrated circuit core equipment. In China, there are China National Building Research Institute, Ningbo Volkerkunst, etc. Our country started relatively late in the research on the preparation technology and application promotion of precision silicon carbide components for integrated circuit equipment, and still has a gap compared with international leading enterprises.       As a pioneer in advanced silicon carbide component manufacturing, ZMSH has established itself as a comprehensive solutions provider for precision SiC products, offering end-to-end capabilities from customized SiC mechanical parts to high-performance substrates and ceramic components. Leveraging proprietary pressureless sintering and CNC machining technologies, we deliver tailored SiC solutions with exceptional thermal conductivity (170-230 W/m·K) and mechanical strength (flexural strength ≥400MPa), serving demanding applications across semiconductor equipment, electric vehicle power systems, and aerospace thermal management. Our vertically integrated production covers the entire value chain - from high-purity SiC powder synthesis to complex near-net-shape ceramic component fabrication - enabling precise customization of dimensional tolerances (up to ±5μm) and surface finishes (Ra≤0.1μm) for both standard and application-specific designs. The company's automotive-qualified 6-inch/8-inch SiC substrates feature best-in-class micropipe densities (

Basic Structure of GaN-based LED Epitaxial Layers 01 Introduction The epitaxial layer structure of gallium nitride (GaN)-based LEDs is the core determinant of device performance, requiring careful consideration of material quality, carrier injection efficiency, luminescent efficiency, and thermal management. With evolving market demands for higher efficiency, yield, and throughput, epitaxial technology continues to advance. While mainstream manufacturers adopt similar foundational structures, key differentiators lie in nuanced optimizations that reflect R&D capabilities. Below is an overview of the most common GaN LED epitaxial structure.       02 Epitaxial Structure Overview Sequentially grown on the substrate, the epitaxial layers typically include: 1. Buffer layer 2. Undoped GaN layer(Optional n-type AlGaN layer) 3. N-type GaN layer 4. Lightly doped n-type GaN layer 5. Strain-relief layer 6. Multiple quantum well (MQW) layer 7. AlGaN electron blocking layer (EBL) 8. Low-temperature p-type GaN layer 9. High-temperature p-type GaN layer 10.Surface contact layer       Common GaN LED Epitaxial Structures       Detailed Layer Functions   1）Buffer Layer Grown at 500–800°C using binary (GaN/AlN) or ternary (AlGaN) materials. Purpose: Mitigates lattice mismatch between substrate (e.g., sapphire) and epilayers to reduce defects. Industry trend: Most manufacturers now pre-deposit AlN via PVD sputtering before MOCVD growth to enhance throughput.   2）Undoped GaN Layer Two-stage growth: Initial 3D GaN islands followed by high-temperature 2D GaN planarization. Outcome: Provides atomically smooth surfaces for subsequent layers.   3）N-type GaN Layer Si-doped (8×10¹⁸–2×10¹⁹ cm⁻³) for electron supply. Advanced option: Some designs insert an n-AlGaN interlayer to filter threading dislocations.             4）Lightly Doped n-GaN Layer Lower doping (1×10¹⁸–2×10¹⁸ cm⁻³) creates a current-spreading high-resistance region. Benefits: Improves voltage characteristics and luminescence uniformity.   5）Strain-Relief Layer InGaN-based transition layer with graded In composition (between GaN and MQW levels). Design variants: Superlattices or shallow-well structures to gradually accommodate lattice strain.   6）MQW (Multiple Quantum Well)   InGaN/GaN periodic stacks (e.g., 5–15 pairs) for radiative recombination. Optimization: Si-doped GaN barriers reduce operating voltage and enhance brightness. latest company news about Basic Structure of GaN-based LED Epitaxial Layers 2   7）AlGaN Electron Blocking Layer (EBL) High-bandgap barrier to confine electrons within MQWs, boosting recombination efficiency.             8）Low-Temp p-GaN Layer Mg-doped layer grown slightly above MQW temperature to: Enhance hole injection Protect MQWs from subsequent high-temperature damage   9）High-Temp p-GaN Layer Grown at ~950°C to: Supply holes Planarize V-pits propagating from MQWs Reduce leakage currents   10）Surface Contact Layer Heavily Mg-doped GaN for ohmic contact formation with metal electrodes, minimizing operating voltage.   03 Conclusion The GaN LED epitaxial structure exemplifies the synergy between materials science and device physics, where each layer critically impacts electro-optical performance. Future advancements will focus on defect engineering, polarization management, and novel doping techniques to push efficiency boundaries and enable emerging applications.     As a pioneer in gallium nitride (GaN) LED epitaxial technology, ZMSH has pioneered advanced GaN-on-sapphire and GaN-on-SiC epitaxial solutions, leveraging proprietary MOCVD (Metal-Organic Chemical Vapor Deposition) systems and precision thermal management to deliver high-performance LED wafers with defect densities below 10⁶ cm⁻² and uniform thickness control within ±1.5%. Our customizable substrates—including GaN-on-sapphire, blue sapphire, silicon carbide, and metal composite substrates—enable tailored solutions for ultra-high-brightness LEDs, micro-LED displays, automotive lighting, and UV-C applications. By integrating AI-driven process optimization and ultrafast pulsed laser annealing, we achieve 95% reliability, supported by automotive-grade certifications (AEC-Q101) and mass production scalability for 5G backlights, AR/VR optics, and industrial IoT devices.     The following is GaN substrate & Sapphire wafer of ZMSH:             * Please contact us for any copyright concerns, and we will promptly address them.            

   Sapphire – No Misnomer Here!         Watch enthusiasts are certainly familiar with the term "sapphire crystal," as the vast majority of well-known watch models—except for vintage-inspired pieces—almost universally feature this material in their specifications. This raises three key questions:     1. Is sapphire valuable? 2. Is a "sapphire crystal" watch glass really made of sapphire? 3. Why use sapphire?       In reality, the sapphire used in watchmaking is not the same as the natural gemstone in the traditional sense. The correct term is "sapphire crystal" (sometimes called "sapphire glass"), which is a synthetic sapphire primarily composed of aluminum oxide (Al₂O₃). Since no coloring agents are added, synthetic sapphire is colorless.         From a chemical and structural perspective, there is no difference between natural and synthetic sapphire. However, compared to natural sapphire, synthetic sapphire is not particularly valuable.   The reason why major watch brands unanimously favor sapphire crystal for watch glasses isn’t just because it sounds premium—it’s mainly due to its exceptional properties:       - Hardness: Synthetic sapphire matches natural sapphire at 9 on the Mohs scale, second only to diamond, making it highly scratch-resistant (unlike acrylic, which can easily get scuffed).   - Durability: It is corrosion-resistant, heat-resistant, and highly thermally conductive.   - Optical Clarit: Sapphire crystal offers exceptional transparency, making it arguably the perfect material for modern watchmaking.         The use of sapphire crystal in watchmaking began in the 1960sand quickly became widespread. Over the following decades, it became the standard for modern watches, and today, it is practically the only choice in high-end horology.       Then, in 2011, sapphire once again became a sensation in the luxury watch industry when RICHARD MILLE unveiled the RM 056, featuring a fully transparent sapphire case—an unprecedented innovation in high-end watchmaking. Many brands soon realized that sapphire wasn’t just for watch crystals—it could also be used for cases, and it looked stunning.           Within just a few years, sapphire cases became a trend, evolving from clear transparency to vibrant colors, resulting in increasingly diverse designs. As technology advanced, sapphire-cased watches transitioned from limited editions to regular production models, and even core collections.   So today, let’s take a look at some of the sapphire-crystal-cased watches.     ARTYA     Purity Tourbillon This Purity Tourbillon by Swiss independent watchmaker ArtyA features a highly skeletonized design and a transparent sapphire case, maximizing the visual impact of the tourbillon—just as its name suggests: pure tourbillon.     BELL & ROSS     BR-X1 Chronograph Tourbillon Sapphire In 2016, Bell & Ross debuted its first sapphire watch, the BR-X1 Chronograph Tourbillon Sapphire, limited to just 5 pieces and priced at over €400,000—a true high-end statement. A year later, they released an even more transparent skeletonized version, the BR-X1 Skeleton Tourbillon Sapphire. Then, in 2021, they introduced the BR 01 Cyber Skull Sapphire, featuring their signature skull motif in a bold square case.         BLANCPAIN   L-Evolution Strictly speaking, Blancpain’s L-Evolution Minute Repeater Carillon Sapphire doesn’t have a fully sapphire case, but its transparent sapphire bridges and side windows create a striking see-through effect—a "half-step" into sapphire cases.     CHANEL           J12 X-RAY For the 20th anniversary of the J12, Chanel unveiled the J12 X-RAY. What makes this watch remarkable is that not only the case and dial are made of sapphire—the entire bracelet is too, achieving a fully transparent look that’s visually breathtaking.             CHOPARD     L.U.C Full Strike Sapphire Released in 2022, Chopard’s L.U.C Full Strike Sapphire was the first minute repeater with a sapphire case. To maximize transparency, even the gongs are made of sapphire—a world-first innovation. The watch also earned the Poinçon de Genève (Geneva Seal), the first non-metal timepiece to do so. Limited to 5 pieces.     GIRARD-PERREGAUX     Quasar In 2019, Girard-Perregaux introduced its first sapphire-cased watch, the Quasar, featuring its iconic "Three Bridges" design. Meanwhile, the Laureato Absolute collection debuted its first sapphire model in 2020, alongside the Laureato Absolute Tribute with a red transparent case—though not sapphire, but a new polycrystalline material called YAG (yttrium aluminum garnet).         GREUBEL FORSEY     30° Double Tourbillon Sapphire Greubel Forsey’s 30° Double Tourbillon Sapphire stands out because both the case and crown are made of sapphire crystal. The manually wound movement, visible through the case, boasts four series-coupled barrels for 120 hours of power reserve. Priced at over $1 million, limited to 8 pieces.     JACOB & CO.     Astronomia Flawless To fully showcase the JCAM24 manual-winding movement, Jacob & Co. created the Astronomia Flawless with a fully sapphire case. From every angle, the intricate movement appears to float in mid-air.     RICHARD MILLE     As the trendsetter in sapphire cases, RICHARD MILLE has mastered the material. Whether in men’s or women’s watches, or complicated timepieces, sapphire cases are a signature. Like carbon fiber, RICHARD MILLE also emphasizes color variations, making their sapphire watches ultra-trendy.       From sapphire crystals to sapphire cases, this material has become a symbol of high-end watchmaking innovation. Which sapphire watch is your favorite? Let us know!

  Laser slicing will become the mainstream technology for cutting 8-inch silicon carbide in the future       Q: What are the main technologies for silicon carbide slicing processing?   A: The hardness of silicon carbide is second only to that of diamond, and it is a high-hardness and brittle material. The process of cutting the grown crystals into sheets takes a long time and is prone to cracking. As the first process in the processing of silicon carbide single crystals, the performance of slicing determines the subsequent grinding, polishing, thinning and other processing levels. Slicing processing is prone to cause cracks on the surface and subsurface of the wafer, increasing the breakage rate and manufacturing cost of the wafer. Therefore, controlling the surface crack damage of the wafer slicing is of great significance for promoting the development of silicon carbide device manufacturing technology. The currently reported silicon carbide slicing processing technologies mainly include consolidation, free abrasive slicing, laser cutting, cold separation and electrical discharge slicing, among which reciprocating diamond consolidated abrasive multi-wire cutting is the most commonly used method for processing silicon carbide single crystals. When the size of the crystal ingot reaches 8 inches or more, the requirements for wire cutting equipment are very high, the cost is also very high, and the efficiency is too low. There is an urgent need to develop new cutting technologies that are low-cost, low-loss and high-efficiency.       ZMSH's SiC crystal ingot       Q: What are the advantages of laser slicing technology over traditional multi-wire cutting technology? A: In the traditional wire cutting process, silicon carbide ingots need to be cut along a certain direction into thin sheets with a thickness of several hundred microns. These sheets are then ground with diamond grinding fluid to remove tool marks and surface subsurface crack damage and reach the required thickness. After that, CMP polishing is carried out to achieve global planarization, and finally, the silicon carbide wafers are cleaned. Due to the fact that silicon carbide is a high-hardness and brittle material, it is prone to warping and cracking during cutting, grinding and polishing, which increases the breakage rate of the wafer and the manufacturing cost. Moreover, the surface and interface roughness is high, and the pollution is severe (such as dust and wastewater). Additionally, the multi-wire cutting processing cycle is long and the yield is low. It is estimated that the traditional multi-wire cutting method has an overall material utilization rate of only 50%, while after polishing and grinding, the cutting loss ratio is as high as 75%. Early production statistics from abroad show that with 24-hour continuous parallel production, it takes about 273 days to produce 10,000 pieces, which is a relatively long time. At present, most domestic silicon carbide crystal growth enterprises adopt the approach of "how to increase production" and significantly raise the number of crystal growth furnaces. In fact, when the crystal growth technology is not yet fully mature and the yield rate is relatively low, they should consider "how to save" more. The adoption of laser slicing equipment can significantly reduce losses and increase production efficiency. According to estimates, taking a single 20-millimeter SiC ingot as an example, 30 350um wafers can be produced using a wire saw, while more than 50 wafers can be produced with laser slicing technology. Meanwhile, due to the better geometric characteristics of the wafers produced by laser slicing, the thickness of a single wafer can be reduced to 200um, which further increases the number of wafers. A single 20mm SiC ingot can produce over 80 wafers. The traditional multi-wire cutting technology has been widely applied in silicon carbide of 6 inches and below. However, it takes 10 to 15 days to cut 8-inch silicon carbide, which has high requirements for equipment, high cost and low efficiency. Under such circumstances, the technical advantages of large-sized laser slicing become apparent and it will become the mainstream technology for 8-inch cutting in the future. Laser cutting of 8-inch silicon carbide ingots can achieve a single-piece cutting time of less than 20 minutes per piece, while the single-piece cutting loss is controlled within 60um.       ZMSH's SiC crystal ingot     Overall, compared with multi-wire cutting technology, laser slicing technology has advantages such as high efficiency and speed, high slicing rate, low material loss, and cleanliness. Q: What are the main difficulties in silicon carbide laser cutting technology? A: The main process of silicon carbide laser cutting technology consists of two steps: laser modification and wafer separation. The core of laser modification is to shape and optimize the laser beam. Various parameters such as laser power, spot diameter, and scanning speed will all affect the effect of silicon carbide ablation modification and subsequent wafer separation. The geometric dimensions of the modification zone determine the surface roughness and the subsequent separation difficulty. High surface roughness will increase the difficulty of subsequent grinding and increase material loss. After laser modification, the separation of wafers mainly relies on shear force to peel the cut wafers off the ingots, such as cold cracking and mechanical tensile force. Currently, domestic manufacturers' research and development mostly use ultrasonic transducers to separate by vibration, which may lead to problems such as fragmentation and chipping, thereby reducing the yield of finished products.   The above two steps should not pose significant difficulties for most research and development units. However, due to the different processes and doping of crystal ingots from various crystal growth manufacturers, the quality of crystal ingots varies greatly. Or, if the internal doping and stress of a single crystal ingot are uneven, it will increase the difficulty of crystal ingot slicing, increase losses and reduce the yield of finished products. Merely identifying through various detection methods and then conducting zonal laser scanning slicing may not have a significant effect on improving efficiency and slice quality. How to develop innovative methods and technologies, optimize the slicing process parameters, and develop laser slicing equipment and technologies with universal processes for crystal ingots of different qualities from different manufacturers is the core of large-scale application.   Q: Besides silicon carbide, can laser slicing technology be applied to the cutting of other semiconductor materials? A: Early laser cutting technology was applied in various material fields. In the semiconductor field, it was mainly used for dicing chip wafers. Currently, it has expanded to the slicing of large-sized single crystals. In addition to silicon carbide, it can also be used for slicing high-hardness or brittle materials such as single crystal materials like diamond, gallium nitride and gallium oxide. The team from Nanjing University has done a lot of preliminary work on the slicing of these several semiconductor single crystals, verifying the feasibility and advantages of the laser slicing technology for semiconductor single crystals.       ZMSH's Diamond wafer & GaN wafer       Q: Are there any mature laser slicing equipment products in our country at present? What stage are you currently at in the research and development of this device?   A: Large-sized silicon carbide laser slicing equipment is regarded by the industry as the core equipment for slicing 8-inch silicon carbide ingots in the future. Large-sized silicon carbide ingot laser slicing equipment can only be provided by Japan. It is expensive and subject to an embargo against China. According to research, the domestic demand for laser slicing/thinning equipment is estimated to reach around 1,000 units based on the number of wire cutting units and the planned capacity of silicon carbide. Currently, domestic companies such as Han's Laser, Delong Laser, and Jiangsu General have invested huge amounts of money in developing related products, but no mature domestic commercial equipment has yet been applied in production lines.   As early as 2001, the team led by Academician Zhang Rong and Professor Xiu Xiangqian from Nanjing University developed a laser exfoliation technology for gallium nitride substrates with independent intellectual property rights, accumulating a rich research foundation. In the past year, we have applied this technology to the laser cutting and thinning of large-sized silicon carbide. We have completed the development of prototype equipment and slicing process research and development, achieving the cutting and thinning of 4-6 inch semi-insulating silicon carbide wafers and the slicing of 6-8 inch conductive silicon carbide ingots. The slicing time for 6-8-inch semi-insulating silicon carbide is 10-15 minutes per slice, with a single-slice loss of less than 30 μ m. The single-piece cutting time for 6-8-inch conductive silicon carbide ingots is 14-20 minutes per piece, with a single-piece loss of less than 60um. It is estimated that the production rate can be increased by more than 50%. After slicing and grinding and polishing, the geometric parameters of the silicon carbide wafers comply with the national standards. The research results also show that the thermal effect during laser slicing has no significant influence on the stress and geometric parameters of silicon carbide. Using this equipment, we also conducted a feasibility verification study on the slicing technology of single crystals of diamond, gallium nitride and gallium oxide.     As an innovative leader in silicon carbide wafer processing technology, ZMSH has taken the lead in mastering the core technology of 8-inch silicon carbide laser slicing. Through its independently developed high-precision laser modulation system and intelligent thermal management technology, it has successfully achieved an industry breakthrough by increasing the cutting speed by more than 50% and reducing material loss to within 100μm. Our laser slicing solution employs ultraviolet ultra-short pulse lasers in combination with an adaptive optical system, which can precisely control the cutting depth and heat-affected zone, ensuring that the TTV of the wafer is controlled within 5μm and the dislocation density is less than 10³cm⁻², providing reliable technical support for the large-scale mass production of 8-inch silicon carbide substrates. At present, this technology has passed automotive-grade verification and is being applied industrially in the fields of new energy and 5G communication.       The following is the SiC 4H-N & SEMI type of ZMSH:               * Please contact us for any copyright concerns, and we will promptly address them.