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NVIDIA Processors Switch to Thermal Interface Material! SiC Substrate Demand Set to Explode! The thermal bottleneck of future AI chips is being overcome by silicon carbide (SiC) substrate materials. According to overseas media reports, NVIDIA plans to replace the intermediate substrate material in ... Read More
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Title: Breakthrough in 12-Inch Silicon Carbide Wafer Laser Liftoff Technology – Beijing Jinfei Semiconductor Technology Co., Ltd. Recently, Beijing Jinfei Semiconductor Technology Co., Ltd., a leading domestic semiconductor equipment manufacturer, achieved a significant breakthrough in silicon ... Read More
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What is FOUP in Chip Manufacturing? In semiconductor manufacturing, a Front Opening Unified Pod (FOUP) is a critical container used to protect, transport, and store wafers. Designed to hold 25 pieces of 300mm wafers, its primary components include a front-opening chamber and a dedicated ... Read More
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Wafer Cleaning Technologies and Data Sharing Wafer cleaning technology is a critical process in semiconductor manufacturing, as even atomic-level contaminants can affect device performance or yield. The cleaning process typically involves multiple steps to remove different types of contaminants, ... Read More
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Key Raw Materials in Semiconductor Manufacturing: Types of Wafer Substrates Wafer substrates serve as the physical carriers of semiconductor devices, with their material properties directly influencing device performance, cost, and application scope. Below are the primary types of wafer substrates ... Read More
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Large-Format Laser Dicing Equipment: Core Technology for Future 8-Inch SiC Wafer Production Silicon Carbide (SiC) represents not only a critical technology for national defense security but also a key focus for the global automotive and energy industries. As the initial processing step for SiC ... Read More
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Comprehensive Overview of Wafer-Level Packaging (WLP): Technology, Integration, Development, and Key Players Wafer-Level Packaging (WLP) Overview Wafer-Level Packaging (WLP) represents a specialized integrated circuit (IC) packaging technology characterized by the execution of all critical packaging ... Read More
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Analysis of 3C-SiC Heteroepitaxy I. Development History of 3C-SiC 3C-SiC, a critical polymorph of silicon carbide (SiC), has evolved through advancements in semiconductor materials science. In the 1980s, Nishino et al. first achieved 4 µm-thick 3C-SiC films on silicon substrates via chemical vapor ... Read More
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MicroJet Laser Technology Empowers the Development of Silicon Carbide AR Glasses Industry I. Development Background As augmented reality (AR) technology gradually integrates into daily life, the AR glasses market is experiencing rapid growth. Innovations in materials and processing technologies have ... Read More
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Westlake University Team Develops Novel SiC Metalens with Promising Thermal Management Capabilities for High-Power Laser Systems The research group led by Prof. Min Qiu at Westlake University has successfully developed a novel homogenous 4H-SiC (silicon carbide) metalens, offering a unique solution ... Read More
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