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4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors

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4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors

China 4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors supplier

Large Image :  4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors

Product Details:

Place of Origin: china
Brand Name: zmsh
Model Number: ingot

Payment & Shipping Terms:

Minimum Order Quantity: 500g
Price: by case
Packaging Details: by customized case
Delivery Time: 15days within
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Detailed Product Description
Industry: Semiconductor Substrate Materials: Sic Crystal
Application: 5G, Device Material, MOCVD,power Electronics Type: 4H-N,semi ,No Doped
Color: Green,blue, White Hardeness: 9.0 Up

silicon carbide sic broken block,Gem grade sic ingot ,
5-15mm thickness sic scrap 

 

SiC Wafer Feature

 

Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

Physical & Electronic Properties of SiC Compared to GaAa and Si

  Wide Energy Bandgap (eV)

4H-SiC: 3.26 6H-SiC: 3.03 GaAs: 1.43 Si: 1.12

Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects because of the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of blue light emitting diodes and nearly solar blind UV photodetectors possible.

High Breakdown Electric Field [V/cm (for 1000 V operation)]

4H-SiC: 2.2 x 106* 6H-SiC: 2.4 x 106* GaAs: 3 x 105 Si: 2.5 x 105

SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices. Additionally, it allows the devices to be placed very close together, providing high device packing density for integrated circuits.

High Thermal Conductivity (W/cm · K @ RT)
4H-SiC: 3.0-3.8 6H-SiC: 3.0-3.8 GaAs: 0.5 Si: 1.5

SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated.

High Saturated Electron Drift Velocity [cm/sec (@ E ≥ 2 x 105 V/cm)]

4H-SiC: 2.0 x 107 6H-SiC: 2.0 x 107 GaAs: 1.0 x 107 Si: 1.0 x 107
SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC.

 

Applications

*III-V Nitride Deposition    *Optoelectronic Devices

*High-Power Devices           *High-Temperature Devices

* Moissanite                          *High-Frequency Power Devices

How about  use in  Moissanite

Synthetic moissanite is also known as silicon carbide after its chemistry and by the trade name, carborundum. In the meteoritic material, moissanite is associated with tiny diamonds. Moissanite is also the trade name being used for new synthetic SiC gemstones..

As a diamond simulant, artificial moissanite is very hard to differentiate from diamond and can fool many gemologists. It does have many similarities. It is very hard at 9.25 (diamond is 10) and it is highly refractive with an index of refraction of 2.6 - 2.7 (diamond's IR is slightly lower at 2.42). Most important, moissanite and diamond are thermally conductive unlike other diamond simulants and unfortunately it is this property that is primarily used as the test for the authenticity of real diamonds. Differences however are clear and other tests can be used to differentiate the two. First of all, moissanite is hexagonal, not isometric and therefore it is doubly refractive unlike diamond. A through-the-face examination of a moissanite gemstone should show double facet edges whereas a diamond's edges are single in appearance. Moissanite is also slightly less dense than diamond and is rarely perfectly clear of color, having pale shades of green. Natural flaws are absent in moissanite, replaced instead by tiny, unnatural, white, ribbon-like structures that are a result of the growing process. The synthetic SiC known as carborundum has seen many uses in high tech ceramics, electrical components, abrasives, ball bearings, semi-conductors, extremely hard saws and armor.

Natural moissanite is very rare and is limited to iron-nickel meteorites and a few other rare ultramafic igneousoccurrences. Initially there were skeptics to the original meteorite findings and were attributed to the silicon carbide blades that may have been used to saw the type specimens. But this has been disputed because Dr Henri Moissan did not use silicon carbide blades to prepare the samples.

Moissanite can be a bi-product of the blast-furnace process used to make iron. In a blast furnace, the raw ingredients such as iron ore, carbon (usually in the form of coke, but other forms such as methane may be used), limestone and other chemicals and air (used to react with impurities) are continuously introduced. The reaction results in the production of pig iron which is removed as a liquid while the impurities form a slag which floats to the top and is removed. The sides of the huge furnace are relatively cool, while the interior is very hot, and this creates conditions for minerals to crystallize. Every few months, the furnace is emptied so that these minerals can be cleaned from the walls of the furnace. One such mineral is moissanite, which readily crystallizes from the silicon and carbon dissolved in the molten iron. The resulting moissanite crystals are nearly black and opaque due to their iron content, but they can be quite colorful and beautiful, although most are ground up and used as abrasives.

There are several phases of SiC. The original mineral discovered is officially known as moissanite-6H. The (6H) refers to the hexagonal symmetry of this phase of moissanite. There are two other phases recognized as minerals: moissanite-5H and the isometric phase beta-moissanite.

 
2.Size Of Material Ingot
 

2”

3”

4”

6”

 

Polytype

4H/6H

4H/6H

4H/6H

4H

 

Diameter

50.80mm±0.38mm

76.2mm±0.38mm

100.0mm±0.5mm

150.0mm±0.2mm

 

       
Thickness:5-15mm 
SHape: broken scrap & whole ingot 
 
3.products in details
4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors
 

 

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS by FOB.

 

Q: How to pay?

A: T/T, IN advance 

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 30g.

(2) For customized commen products, the MOQ is 50g

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

 

 
Thanks~~~
 

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Contact Person: Wang

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