Sic Substrate WITH 9.7 Dielectric Constant 4.9 W/MK Thermal Conductivity

Product Description:

Silicon carbide materials have a wide range of applications in various hi-tech fields such as high-speed rail, automotive electronics, smart grids, photovoltaic inverters, industrial electromechanical, data centers, white goods, consumer electronics, 5G communication, next-generation displays, etc. Their huge market potential and advantages over silicon-based devices make them a valuable asset.

At present, the application of Silicon Carbide in the medium and low voltage fields can be mainly divided into three:

• Low voltage field: Mainly used in consumer electronics such as PFC and power supplies. For example, Xiaomi and Huawei use gallium nitride for fast charger.
• Medium voltage field: Mainly used in automotive electronics or electrics for rail transit and power grid with a voltage of over 3300V. Tesla’s Model 3 is the first use of silicon carbide device in automotive.
• High voltage field: Though Silicon carbide has great potential in this sector, there are still no mature products officially launched. Electric vehicle, however, is the ideal scenario for silicon-based devices as these have compact size and higher energy density compared to silicon’s IGBTs.

Features:

Technical Parameters:

4H & 6H-SiC are variation of silicon carbide materials. Diameter for both types can range from 50.8mm (2 inches) to 200mm (8 inches). Dopants used for both are N/Nitrogen or intrinsic, while type of either can be HPSI. The resistivity for 4H-SiC can be 0.015 to 0.028 ohm*cm, while that of 6H-SiC is higher at higher than 1E7 ohm*cm. Their thickness is between 250um to 15,000um (15mm), and all packages come with single or double side polished. Stacking sequence of 4H-SiC is ABCB, while that of 6H-SiC is ABCACB. Dielectric constant for 4H-SiC is 9.6 and 6H-SiC is 9.66 respectively. The electron mobility of 4H-SiC is 800 cm2/V*S and is lower at 400 cm2/V*S for 6H-SiC. Finally, both materials have the same density at 3.21 · 103 kg/m3.

Applications:

ZMSH SIC010 SiC Substrate is a high-quality and economical product designed for various applications. It features a 10x10mm, 5x5mm, 1x1cm, and 0.5x0.5mm customized size, a resistivity of 0.015~0.028ohm.cm or >1E7ohm.cm, a dielectric constant of 9.7, a surface flatness of λ/10@632.8nm, a density of 3.2 G/cm3, and is certified with RoHS. The minimum order quantity is 10pc, the price is subject to the case, it is packaged in customized plastic boxes, and the delivery time is within 30 days. ZMSH offers a supply ability of 1000pc/month, and accepts payment via T/T.

Customization:

Customized Service for SiC Substrate: ZMSH SIC010

• Brand Name: ZMSH
• Model Number: SIC010
• Place of Origin: CHINA
• Certification: ROHS
• Minimum Order Quantity: 10pc
• Price: by case
• Packaging Details: Customized plastic box
• Delivery Time: In 30 days
• Payment Terms: T/T
• Supply Ability: 1000pc/month
• Thermal Conductivity: 4.9 W/mK
• Surface: Si-face CMP; C-face MP
• Tensile Strength: >400MPa
• Material: SiC Monocrystal
• Dopant: N/A
• Specialized in: SIC laser cutting, 4H-N SIC wafers, Customized shape SIC plates

Support and Services:

We provide technical support and service for our SiC Substrates. Our team of highly experienced professionals is available to help you with any questions you may have about our products.

We offer a variety of support services, such as:

• Design and fabrication assistance
• Troubleshooting and problem resolution
• Product customization
• Product performance optimization
• Product testing and evaluation

We also provide ongoing maintenance and repair services for our SiC Substrates.

If you have any questions about our SiC Substrates or any of our other products, please don't hesitate to contact us.