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Sic Substrate WITH 9.7 Dielectric Constant 4.9 W/MK Thermal Conductivity
  • Sic Substrate WITH 9.7 Dielectric Constant 4.9 W/MK Thermal Conductivity
  • Sic Substrate WITH 9.7 Dielectric Constant 4.9 W/MK Thermal Conductivity
  • Sic Substrate WITH 9.7 Dielectric Constant 4.9 W/MK Thermal Conductivity
  • Sic Substrate WITH 9.7 Dielectric Constant 4.9 W/MK Thermal Conductivity

Sic Substrate WITH 9.7 Dielectric Constant 4.9 W/MK Thermal Conductivity

Place of Origin CHINA
Brand Name ZMSH
Certification rohs
Model Number SIC010
Product Details
Thermal Expansion Coefficient:
4.5 X 10-6/K
Resistivity:; Or >;
Surface Flatness:
3.2 G/cm3
Substrate Type:
Si-face CMP; C-face Mp;
Breakdown Voltage:
5.5 MV/cm
Surface Roughness:
High Light: 

SiC Wafer Chips


9.7 Dielectric Constant SiC Substrate


4.9 W/MK SiC Substrate

Product Description

Product Description:

Silicon carbide materials have a wide range of applications in various hi-tech fields such as high-speed rail, automotive electronics, smart grids, photovoltaic inverters, industrial electromechanical, data centers, white goods, consumer electronics, 5G communication, next-generation displays, etc. Their huge market potential and advantages over silicon-based devices make them a valuable asset.

At present, the application of Silicon Carbide in the medium and low voltage fields can be mainly divided into three:

  • Low voltage field: Mainly used in consumer electronics such as PFC and power supplies. For example, Xiaomi and Huawei use gallium nitride for fast charger.
  • Medium voltage field: Mainly used in automotive electronics or electrics for rail transit and power grid with a voltage of over 3300V. Tesla’s Model 3 is the first use of silicon carbide device in automotive.
  • High voltage field: Though Silicon carbide has great potential in this sector, there are still no mature products officially launched. Electric vehicle, however, is the ideal scenario for silicon-based devices as these have compact size and higher energy density compared to silicon’s IGBTs.



Silicon carbide is a versatile and durable substrate, with the following physical properties:

  • Polytype Crystal structure
  • Thermal conductivity (n-type; 0.020 Ω*cm) a~4.2 W/cm • K @ 298 K and c~3.7 W/cm • K @ 298 K
  • Lattice parameters Hexagonal a=3.073 Å c=10.053 Å
  • Supported diameters 2inch ~8inch; 100 mm* & 150 mm
  • Bandgap 3.26 eV
  • Thermal conductivity (HPSI): a~4.9 W/cm • K @ 298 K and c~3.9 W/cm • K @ 298 K
  • Mohs hardness 9.2

Silicon carbide has a number of advantages over traditional silicon substrates. These include:

  • High hardness which makes it suitable for high speed, high temperature and/or high voltage applications.
  • High thermal conductivity which allows for miniaturization and improved electrical conductivity.
  • Low coefficient for thermal expansion which makes it perfect for fitting into small devices.
  • High resistance to thermal shock which increases the lifetime and performance of silicon carbide.
  • Non-reactive with acids, alkalis and molten salts at temperatures up to 800°C.
  • Strength at high temperatures, allowing to safely operate at temperatures over 1600°C.

Technical Parameters:

4H & 6H-SiC are variation of silicon carbide materials. Diameter for both types can range from 50.8mm (2 inches) to 200mm (8 inches). Dopants used for both are N/Nitrogen or intrinsic, while type of either can be HPSI. The resistivity for 4H-SiC can be 0.015 to 0.028 ohm*cm, while that of 6H-SiC is higher at higher than 1E7 ohm*cm. Their thickness is between 250um to 15,000um (15mm), and all packages come with single or double side polished. Stacking sequence of 4H-SiC is ABCB, while that of 6H-SiC is ABCACB. Dielectric constant for 4H-SiC is 9.6 and 6H-SiC is 9.66 respectively. The electron mobility of 4H-SiC is 800 cm2/V*S and is lower at 400 cm2/V*S for 6H-SiC. Finally, both materials have the same density at 3.21 · 103 kg/m3.



ZMSH SIC010 SiC Substrate is a high-quality and economical product designed for various applications. It features a 10x10mm, 5x5mm, 1x1cm, and 0.5x0.5mm customized size, a resistivity of or >, a dielectric constant of 9.7, a surface flatness of λ/10@632.8nm, a density of 3.2 G/cm3, and is certified with RoHS. The minimum order quantity is 10pc, the price is subject to the case, it is packaged in customized plastic boxes, and the delivery time is within 30 days. ZMSH offers a supply ability of 1000pc/month, and accepts payment via T/T.



Customized Service for SiC Substrate: ZMSH SIC010

  • Brand Name: ZMSH
  • Model Number: SIC010
  • Place of Origin: CHINA
  • Certification: ROHS
  • Minimum Order Quantity: 10pc
  • Price: by case
  • Packaging Details: Customized plastic box
  • Delivery Time: In 30 days
  • Payment Terms: T/T
  • Supply Ability: 1000pc/month
  • Thermal Conductivity: 4.9 W/mK
  • Surface: Si-face CMP; C-face MP
  • Tensile Strength: >400MPa
  • Material: SiC Monocrystal
  • Dopant: N/A
  • Specialized in: SIC laser cutting, 4H-N SIC wafers, Customized shape SIC plates

Support and Services:

SiC Substrate Technical Support and Service

We provide technical support and service for our SiC Substrates. Our team of highly experienced professionals is available to help you with any questions you may have about our products.

We offer a variety of support services, such as:

  • Design and fabrication assistance
  • Troubleshooting and problem resolution
  • Product customization
  • Product performance optimization
  • Product testing and evaluation

We also provide ongoing maintenance and repair services for our SiC Substrates.

If you have any questions about our SiC Substrates or any of our other products, please don't hesitate to contact us.

Contact Us at Any Time

Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Send your inquiry directly to us