3C-SiC Substrate N type Product Grade For 5G Communications
ZMSH specializes in the R&D and production of third-generation semiconductor materials, with over a decade of industry expertise. We provide customized services for semiconductor materials such as sapphire, silicon wafers, and SOI. In the field of silicon carbide (SiC), we cover 4H/6H/3C-type substrates, supporting full-size supply from 2-inch to 12-inch wafers, with flexible customization to meet client requirements, achieving integrated industrial and trade services.
Our SiC substrates are engineered for high-frequency power devices and automotive applications (e.g., EV inverters), offering thermal stability up to 1,600°C and thermal conductivity of 49 W/m·K, outperforming silicon-based alternatives . We adhere to international standards and hold certifications for aerospace-grade materials, ensuring compatibility with extreme environments.
3C-SiC Substrate Core Features
1. Multi-size Coverage:
- Standard sizes: 2-inch, 4-inch, 6-inch, 8-inch.
- Customizable dimensions: From 5×5 mm to tailored specifications.
2. Low Defect Density:
- Microvoid density <0.1 cm⁻², resistivity ≤0.0006 Ω·cm, ensuring high device reliability.
3. Process Compatibility:
- 3C-SiC substrate is suitable for high-temperature oxidation, lithography, and other complex processes.
- Surface flatness: λ/10 @632.8 nm, ideal for precision device manufacturing.
3C-SiC Substrate Material Properties
1. Electrical Advantages:
- High Electron Mobility: 3C-SiC achieves 1,100 cm²/V·s, significantly outperforming 4H-SiC (900 cm²/V·s), reducing conduction losses.
- Wide Bandgap: 3.2 eV bandgap enables high-voltage tolerance (up to 10 kV).
2. Thermal Performance:
- High Thermal Conductivity: 49 W/m·K, superior to silicon, supporting stable operation from -200°C to 1,600°C.
3. Chemical Stability:
- Resistant to acids/alkalis and radiation, suitable for aerospace and nuclear applications.
3C-SiC Substrate Material Technical Parameter
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Propery
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N-type 3C-SiC, Single Crystal
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Lattice Parameters
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a=4.349 Å
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Stacking Sequence
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ABC
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Mohs Hardness
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≈9.2
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Density
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2.36 g/cm3
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Therm. Expansion Coefficient
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3.8×10-6/K
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Refraction Index @750nm
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n=2.615
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Dielectrc Constant
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c~9.66
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Thermal Conductivity
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3-5 W/cm·K@298K
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Band-Gap
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2.36 eV
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Break-Down Electrical Field
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2-5×106V/cm
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Saturation Drift Velocity
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2.7×107m/s
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※ Silicon carbide material properties is only for reference.
Application Scenarios for 3C-SiC Substrates
1. High-Frequency Power Devices:
- 5G Communication Base Stations: 3C-SiC substrates serves as RF device substrates, enabling mmWave signal transmission for high-speed communication.
- Radar Systems: Low-loss characteristics minimize signal attenuation, enhancing detection accuracy.
2. Electric Vehicles (EVs):
- On-Board Chargers (OBC): 3C-SiC substrates reduces energy loss by 40%, shortening charging time for 800V platforms.
- DC/DC Converters: 3C-SiC substrates cuts 80–90% energy loss, improving driving range.
3. Industrial & Energy:
- Solar Inverters: Boosts efficiency by 1–3%, reduces volume by 40–60%, and withstands harsh environments.
- Smart Grids: Reduces equipment size/weight and cooling demands, lowering infrastructure costs.
4. Aerospace:
- Radiation-Hardened Devices: 3C-SiC substrates replaces silicon-based components in satellites and rockets, enhancing radiation resistance and lifespan.
Recommend other models of SiC
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