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3C-SiC Substrate N type Product Grade For 5G Communications

Brand Name:	ZMSH
Model Number:	3C-N SiC
MOQ:	10pc
Price:	by case
Delivery Time:	in 30days
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

CHINA

Certification:

rohs

Size:

2inch,4inch,6inch,5×5,10×10

Dielectric Constant:

9.7

Surface Hardness:

HV0.3>2500

Density:

3.21 G/cm3

Thermal Expansion Coefficient:

4.5 X 10-6/K

Breakdown Voltage:

5.5 MV/cm

Applications:

Communications, Radar Systems

Packaging Details:

customzied plastic box

Supply Ability:

1000pc/month

Highlight:

N-type SiC substrate for 5G

3C-SiC substrate with warranty

5G communication SiC substrate

Product Description

3C-SiC Substrate Product Description

3C-SiC Substrate N type Product Grade For 5G Communications

ZMSH specializes in the R&D and production of third-generation semiconductor materials, with over a decade of industry expertise. We provide customized services for semiconductor materials such as sapphire, silicon wafers, and SOI. In the field of silicon carbide (SiC), we cover 4H/6H/3C-type substrates, supporting full-size supply from 2-inch to 12-inch wafers, with flexible customization to meet client requirements, achieving integrated industrial and trade services.

Our SiC substrates are engineered for high-frequency power devices and automotive applications (e.g., EV inverters), offering thermal stability up to 1,600°C and thermal conductivity of 49 W/m·K, outperforming silicon-based alternatives . We adhere to international standards and hold certifications for aerospace-grade materials, ensuring compatibility with extreme environments.

3C-SiC Substrate Core Features

1. Multi-size Coverage:

Standard sizes: 2-inch, 4-inch, 6-inch, 8-inch.
Customizable dimensions: From 5×5 mm to tailored specifications.

2. Low Defect Density:

Microvoid density <0.1 cm⁻², resistivity ≤0.0006 Ω·cm, ensuring high device reliability.

3. Process Compatibility:

3C-SiC substrate is suitable for high-temperature oxidation, lithography, and other complex processes.
Surface flatness: λ/10 @632.8 nm, ideal for precision device manufacturing.

3C-SiC Substrate Material Properties

1. Electrical Advantages:

High Electron Mobility: 3C-SiC achieves 1,100 cm²/V·s, significantly outperforming 4H-SiC (900 cm²/V·s), reducing conduction losses.
Wide Bandgap: 3.2 eV bandgap enables high-voltage tolerance (up to 10 kV).

2. Thermal Performance:

High Thermal Conductivity: 49 W/m·K, superior to silicon, supporting stable operation from -200°C to 1,600°C.

3. Chemical Stability:

Resistant to acids/alkalis and radiation, suitable for aerospace and nuclear applications.

3C-SiC Substrate Material Technical Parameter

Grade	Zero MPD Production Grade (Z Grade)			Standard Production Grade (P Grade)	Dummy Grade (D Grade)
Diameter	145.5 mm–150.0 mm
Thickness	350 μm ±25 μm
Wafer Orientation	Off axis: 2.0°-4.0°toward [1120]± 0.5° for 4H/6H-P, On axis: 〈111〉 ± 0.5° for 3C-N
** Micropipe Density	0 cm⁻²
** Resistivity	p-type 4H/6H-P	≤0.1 Ω·cm			≤0.3 Ω·cm
	n-type 3C-N	≤0.8 mΩ·cm			≤1 mΩ·cm
Primary Flat Orientation	4H/6H-P	{1010} ±5.0°
	3C-N		{110} ±5.0°
Primary Flat Length	32.5 mm ±2.0 mm
Secondary Flat Length	18.0 mm ±2.0 mm
Secondary Flat Orientation	Silicon face up, 90° CW. from Prime flat ±5.0°
Edge Exclusion	3 mm				6 mm
LTV/TIV/Bow/Warp	≤2.5 μm/≤5 μm/≤15 μm/≤30 μm				≤10 μm/≤15 μm/≤25 μm/≤40 μm
* Roughness	Polish Ra≤1 nm
	CMP Ra≤0.2 nm				Ra≤0.5 nm
Edge Cracks By High Intensity Light	None				Cumulative length≤10 mm, single length≤2 mm
* Hex Plates By High Intensity Light	Cumulative area≤0.05%				Cumulative area≤0.1%
* Polytype Areas By High Intensity Light	None				Cumulative area≤3%
Visual Carbon Inclusions	None				Cumulative area≤0.05%
# Silicon Surface Scratches By High Intensity Light	None				Cumulative length≤1×wafer diameter
Edge Chips High By Intensity Light	None permitted≥0.2mm width and depth				5 allowed, ≤1 mm each
Silicon Surface Contamination By High Intensity	None
Packaging	Multi-wafer Cassette or Single Wafer Container

Notes:

* Defects limits apply to entire wafer surface except for the edge exclusion area.

* The scratches should be checked on Si face only.

Application Scenarios for 3C-SiC Substrates

1. High-Frequency Power Devices:

5G Communication Base Stations: 3C-SiC substrates serves as RF device substrates, enabling mmWave signal transmission for high-speed communication.
Radar Systems: Low-loss characteristics minimize signal attenuation, enhancing detection accuracy.

2. Electric Vehicles (EVs):

On-Board Chargers (OBC): 3C-SiC substrates reduces energy loss by 40%, shortening charging time for 800V platforms.
DC/DC Converters: 3C-SiC substrates cuts 80–90% energy loss, improving driving range.

3. Industrial & Energy:

Solar Inverters: Boosts efficiency by 1–3%, reduces volume by 40–60%, and withstands harsh environments.
Smart Grids: Reduces equipment size/weight and cooling demands, lowering infrastructure costs.

4. Aerospace:

Radiation-Hardened Devices: 3C-SiC substrates replaces silicon-based components in satellites and rockets, enhancing radiation resistance and lifespan.

Recommend other models of SiC

1. Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade

2. 2inch/4inch/6inch/5.0*5.0 Mm/10.0*10.0 Mm Sic Silicon Carbide Substrate Type 3C-N On Axis: < 111 > ± 0.5° Production Grade Dummy Grade

3C-SiC Substrates FAQ

Q1: What is 3C-SiC substrate?

A1: 3C-SiC (cubic silicon carbide) is a semiconductor material with a cubic crystal structure, offering high electron mobility (1,100 cm²/V·s) and thermal conductivity (49 W/m·K), ideal for high-frequency and high-temperature applications.

Q2: What are the main applications of 3C-SiC substrates?

A2: 3C-SiC substrates are used in 5G RF devices, EV inverters, and aerospace electronics due to their low-loss characteristics and radiation resistance.

Tag: #Silicon carbide substrate, #3C-N type SIC, #Semiconductor materials, #3C-SiC Substrate, #Product Grade, #5G Communications

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