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Verticle's Wet Etching Technology Ready for Mass Production of AlGaInP Red Micro-LEDs   US-based R&D company Verticle has announced that its wet etching technology is now ready for mass production of AlGaInP red micro-LEDs. A major hurdle in the commercialization of high-resolution micro-LED displays is reducing the size of LED chips while maintaining efficiency, with red micro-LEDs being particularly susceptible to efficiency drops compared to their blue and green counterparts.   The primary cause of this efficiency reduction is sidewall defects created during plasma-based mesa dry etching. Up until now, no viable alternatives to dry etching have been developed, so efforts have largely focused on mitigating damage through post-dry-etching techniques such as chemical treatment, annealing, and passivation. However, these methods offer only partial recovery and are less effective for the tiny chips required for high-resolution displays, where sidewall defects can penetrate deep into the chip, sometimes exceeding its size.   Because of this, the search for "defect-free" etching methods has been ongoing for years. Wet etching has long been considered a potential solution due to its defect-free nature, but its isotropic characteristics can lead to undesirable undercutting, making it unsuitable for the etching of small chips like micro-LEDs.   However, Verticle, a San Francisco-based firm specializing in LED and display technologies, has recently made a significant breakthrough. The company has developed a defect-free wet chemical etching process for AlGaInP red micro-LEDs, specifically targeting the challenges of mesa etching.   CEO Mike Yoo has stated that Verticle is prepared to scale this wet etching technology for mass production, accelerating the commercial adoption of micro-LED displays for applications ranging from large screens to near-eye displays.     Comparing Sidewall Defects in Wet and Dry Etching   To better understand the impact of sidewall defects, Verticle compared wet and dry etched AlGaInP red micro-LEDs using Cathodoluminescence (CL) analysis. In CL, an electron beam generates electron-hole pairs within the micro-LED surface, and radiative recombination in the undamaged crystal produces bright emission images. Conversely, non-radiative recombination in damaged areas leads to little to no luminescence. CL images and spectra reveal a stark contrast between the two etching methods. Wet-etched AlGaInP red micro-LEDs exhibit much brighter emissions, with the emission area being more than three times larger than that of dry-etched LEDs, according to Mike Yoo.   Most notably, the sidewall defect penetration depth for dry-etched micro-LEDs is around 7 µm, while the depth for wet-etched micro-LEDs is nearly nonexistent, measuring less than 0.2 µm. Consequently, the effective mesa area of dry-etched red micro-LEDs is just 28 percent of that of wet-etched ones. These CL findings suggest that there are few, if any, sidewall defects present in the wet-etched AlGaInP red micro-LEDs.         At ZMSH, you can get more with our premium products. We offer DFB wafers with N-InP substrates, featuring active layers of InGaAlAs/InGaAsP, available in 2, 4, and 6 inches, specifically designed for gas sensor applications. Additionally, we provide high-quality InP FP epiwafers with n/p-type InP substrates, available in 2, 3, and 4 inches, with thicknesses ranging from 350 to 650 µm, ideal for optical network applications. Our products are designed to meet the precise requirements of advanced technologies, ensuring reliable performance and customization options.     DFB wafer N-InP substrate epiwafer active layer InGaAlAs/InGaAsP 2 4 6 inch for gas sensor   A Distributed Feedback (DFB) wafer on an n-type Indium Phosphide (N-InP) substrate is a critical material used in the production of high-performance DFB laser diodes. These lasers are essential for applications requiring single-mode, narrow-linewidth light emission, such as in optical communication, data transmission, and sensing. DFB lasers typically operate in the 1.3 µm and 1.55 µm wavelength ranges, which are optimal for fiber-optic communication due to the low-loss transmission in optical fibers.   （click the picture for more）   InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work   Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. （click the picture for more）        

  As the demand for high-efficiency, high-power, and high-temperature electronics continues to grow, the semiconductor industry is looking beyond traditional materials like silicon (Si) to meet these needs. One of the most promising materials leading this innovation is silicon carbide (SiC). In this article, we explore what SiC wafers are, how SiC semiconductors differ from traditional silicon-based ones, and the significant advantages they offer.     What is a SiC Wafer?     A SiC wafer is a thin slice of silicon carbide, a compound made from silicon and carbon atoms. Silicon carbide is known for its exceptional physical and chemical properties, making it an ideal material for a variety of electronic applications. Unlike traditional silicon wafers, SiC wafers are designed to handle high-power, high-temperature, and high-frequency conditions. These wafers serve as the substrate for manufacturing SiC semiconductors, which are rapidly gaining popularity in power electronics and other high-performance applications.         What is a SiC Semiconductor? A SiC semiconductor is an electronic component made using silicon carbide as its base material.   Semiconductors are essential in modern electronics, as they allow for the control and manipulation of electric currents. SiC semiconductors, specifically, are known for their wide bandgap, high thermal conductivity, and excellent electric field breakdown strength. These characteristics make SiC semiconductors ideal for use in power devices, such as power transistors, diodes, and MOSFETs, where efficiency, reliability, and performance are critical.     What is the Difference Between Si and SiC Wafers?     While silicon (Si) wafers have been the backbone of the semiconductor industry for decades, silicon carbide (SiC) wafers are quickly becoming a game-changer for certain applications. Here’s a detailed comparison of the two:   1. Material Properties:   Silicon (Si): Silicon is a widely used semiconductor material due to its abundant availability, mature fabrication technology, and good electrical properties. However, silicon's relatively narrow bandgap (1.12 eV) limits its performance in high-temperature and high-voltage applications. Silicon Carbide (SiC): SiC has a much wider bandgap (about 3.26 eV), which allows it to operate at much higher temperatures and voltages than silicon. This makes SiC a superior choice for applications that require efficient power conversion and heat dissipation.   2. Thermal Conductivity:   Silicon (Si): Silicon's thermal conductivity is moderate, which can lead to overheating in high-power applications unless extensive cooling systems are used. Silicon Carbide (SiC): SiC has nearly three times the thermal conductivity of silicon, meaning it can dissipate heat much more effectively. This reduces the need for bulky cooling systems, making SiC devices more compact and reliable under extreme conditions.   3. Electric Field Breakdown Strength:   Silicon (Si): Silicon's breakdown electric field is lower, which limits its ability to handle high-voltage operations without risk of breakdown. Silicon Carbide (SiC): SiC's electric field breakdown strength is about ten times greater than that of silicon. This allows SiC-based devices to handle much higher voltages, which is crucial for power electronics.   4. Efficiency and Power Losses:   Silicon (Si): While silicon devices are efficient under standard conditions, their performance drops significantly under high-frequency, high-voltage, and high-temperature conditions, leading to increased power losses. Silicon Carbide (SiC): SiC semiconductors maintain high efficiency across a wider range of conditions, particularly in high-frequency and high-power applications. This translates to lower power losses and better overall system performance.     Feature Si (Silicon) Wafers SiC (Silicon Carbide) Wafers Bandgap Energy 1.12 eV 3.26 eV Thermal Conductivity ~150 W/mK ~490 W/mK Electric Field Breakdown Strength ~0.3 MV/cm ~3 MV/cm Maximum Operating Temperature Up to 150°C Up to 600°C Power Efficiency Lower efficiency at high power and temperature Higher efficiency at high power and temperature Manufacturing Cost Lower cost due to mature technology Higher cost due to more complex manufacturing process Applications General electronics, integrated circuits, microchips Power electronics, high-frequency and high-temperature applications Material Hardness Less hard, more prone to wear Very hard, resistant to wear and chemical damage Heat Dissipation Moderate, requires cooling systems for high power High, reduces need for extensive cooling       The Future of Semiconductor Technology   The transition from silicon to silicon carbide is not just an incremental improvement; it's a significant leap forward for the semiconductor industry. As industries such as automotive, aerospace, renewable energy, and industrial automation demand more robust and efficient electronics, the advantages of SiC are becoming increasingly clear.   For example, in the automotive industry, the rise of electric vehicles (EVs) has created a demand for more efficient power electronics that can handle the high-power requirements of EV motors and charging systems. SiC semiconductors are now being integrated into inverters and chargers to improve efficiency and reduce energy losses, ultimately extending the range of EVs. Similarly, in renewable energy applications, such as solar inverters and wind turbines, SiC devices are helping to increase energy conversion efficiency, reduce cooling requirements, and lower overall system costs. This not only makes renewable energy more viable but also more cost-effective.       Conclusion The emergence of SiC wafers and semiconductors marks a new era in electronics, where higher efficiency, performance, and durability are paramount. As research and development continue, and as the production costs of SiC materials decrease, we can expect to see even more widespread adoption of this technology across various industries. Silicon carbide is poised to revolutionize the semiconductor industry, providing solutions to challenges that traditional silicon simply can't meet. With its superior properties and growing application base, SiC represents the future of high-performance electronics.     Related Recommendations     8inch SiC Wafer Silicon Carbide Wafer Prime Dummy Research Grade 500um 350 Um（click the picture for more）   Silicon carbide (SiC) initially found industrial use as an abrasive material and later gained significance in LED technology. Over time, its exceptional physical properties have led to its widespread adoption in various semiconductor applications across industries. With the limitations of Moore's Law approaching, many semiconductor companies are turning to SiC as the material of the future due to its outstanding performance characteristics.      

What is a Sapphire Wafer? A sapphire wafer is a thin slice of crystalline sapphire, a material that is widely known for its exceptional hardness and transparency. Sapphire, or aluminum oxide (Al₂O₃), is a crystalline form of corundum, and in its purest form, it is colorless and transparent. Sapphire wafers are extensively used in the electronics and optoelectronics industries, especially in applications that require a durable, high-performance substrate material.   Sapphire wafers’ exhibition Sapphire wafers’ data sheet   tandard wafer(customzied)2 inch C-plane sapphire wafer SSP/DSP 3 inch C-plane sapphire wafer SSP/DSP 4 inch C-plane sapphire wafer SSP/DSP 6 inch C-plane sapphire wafer SSP/DSP Special Cut A-plane (1120) sapphire wafer R-plane (1102) sapphire wafer M-plane (1010) sapphire wafer N-plane (1123) sapphire wafer C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis Other customized orientation Customized Size 10*10mm sapphire wafer 20*20mm sapphire wafer Ultra thin (100um) sapphire wafer 8 inch sapphire wafer Patterned Sapphire Substrate (PSS) 2 inch C-plane PSS 4 inch C-plane PSS 2inch DSP C-AXIS 0.1mm/0.175mm/0.2mm/0.3mm/0.4mm/0.5mm/ 1.0mmt SSP C-axis 0.2/0.43mm(DSP＆SSP) A-axis/M-axis/R-axis 0.43mm 3inch DSP/ SSP C-axis 0.43mm/0.5mm 4Inch dsp c-axis 0.4mm/ 0.5mm/1.0mmssp c-axis 0.5mm/0.65mm/1.0mmt 6inch ssp c-axis 1.0mm/1.3mmm dsp c-axis 0.65mm/ 0.8mm/1.0mmt   Specification for substrates   Orientation R-plane, C-plane, A-plane, M-plane or a specified orientation Orientation Tolerance ± 0.1° Diameter 2 inches, 3 inches, 4 inches, 5inch,6 inches, 8 inches or others Diameter Tolerance 0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches Thickness 0.08mm,0.1mm,0.175mm,0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others; Thickness Tolerance 5μm Primary Flat Length 16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches Primary Flat Orientation A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2° TTV ≤7µm for 2 inches, ≤10µm for 3 inches, ≤15µm for 4 inches, ≤25µm for 6 inches BOW ≤7µm for 2 inches, ≤10µm for 3 inches, ≤15µm for 4 inches, ≤25µm for 6 inches Front Surface Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations) Back Surface Fine ground (Ra=0.6μm~1.4μm) or Epi-polished Packaging Packaged in a class 100 clean room environment   How Are Sapphire Wafers Made?   Sapphire wafers are manufactured through a process called the Czochralski method (or the Kyropoulos method), where large single-crystal sapphire boules are grown from molten aluminum oxide. These boules are then sliced into wafers of the desired thickness using a diamond wire saw. After slicing, the wafers undergo polishing to achieve a smooth, mirror-like surface.   Key Properties of Sapphire Wafers   Hardness: Sapphire ranks 9 on the Mohs scale of mineral hardness, making it the second-hardest material after diamond. This exceptional hardness makes sapphire wafers highly resistant to scratching and mechanical damage. Thermal Stability: Sapphire can withstand high temperatures, with a melting point of about 2,030°C (3,686°F). This makes it ideal for high-temperature applications where other materials might fail. Optical Transparency: Sapphire is highly transparent to a wide range of wavelengths, including visible, ultraviolet (UV), and infrared (IR) light. This property makes sapphire wafers ideal for use in optical devices, windows, and sensors. Electrical Insulation: Sapphire is an excellent electrical insulator with a high dielectric constant. This makes it suitable for applications where electrical isolation is critical, such as in certain types of microelectronics. Chemical Resistance: Sapphire is chemically inert and highly resistant to corrosion from acids, bases, and other chemicals, which makes it durable in harsh environments.     Applications of Sapphire Wafers   Light-Emitting Diodes (LEDs): Sapphire wafers are commonly used as substrates in the manufacturing of gallium nitride (GaN) LEDs, especially blue and white LEDs. The lattice structure of sapphire matches well with GaN, promoting efficient light emission. Semiconductor Devices: In addition to LEDs, sapphire wafers are used in radio-frequency (RF) devices, power electronics, and other semiconductor applications where a robust and insulating substrate is needed. Optical Windows and Lenses: Sapphire’s transparency and hardness make it an excellent material for optical windows, lenses, and camera sensor covers, often used in harsh environments such as aerospace and defense industries. Wearables and Electronics: Sapphire is used as a durable cover material for wearables, smartphone screens, and other consumer electronics, thanks to its scratch resistance and optical clarity. Sapphire Wafers vs. Silicon Wafers While sapphire wafers have distinct advantages in certain applications, they are often compared with silicon wafers, which are the most common substrate material in the semiconductor industry.   Silicon Wafers Silicon wafers are thin slices of crystalline silicon, a semiconductor material. They are the foundation of the modern electronics industry, used in the manufacturing of integrated circuits (ICs), transistors, and solar cells. Silicon wafers are known for their electrical conductivity, and their ability to be doped with impurities to enhance their semiconductor properties.     Electrical Conductivity: Unlike sapphire, silicon is a semiconductor, meaning it can conduct electricity under certain conditions. This property makes silicon ideal for making electronic devices like transistors, diodes, and ICs. Cost: Silicon wafers are generally less expensive to produce than sapphire wafers. This is because silicon is more abundant in nature, and the processes for silicon wafer manufacturing are more established and efficient. Thermal Conductivity: Silicon has good thermal conductivity, which is important for dissipating heat in electronic devices. However, it is not as thermally stable as sapphire in extreme temperature environments. Flexibility in Doping: Silicon can be easily doped with elements like boron or phosphorus to modify its electrical properties, which is a key factor in its widespread use in the semiconductor industry. Comparison: Sapphire Wafers vs. Silicon Wafers Property Sapphire Wafer Silicon Wafer Material Crystalline Aluminum Oxide (Al₂O₃) Crystalline Silicon (Si) Hardness 9 on Mohs scale (extremely hard) 6.5 on Mohs scale Thermal Stability Extremely high (melting point ~2,030°C) Moderate (melting point ~1,410°C) Electrical Properties Insulator (non-conductive) Semiconductor (conductive) Optical Transparency Transparent to UV, visible, and IR light Opaque Cost Higher Lower Chemical Resistance Excellent Moderate Applications LEDs, RF devices, optical windows, wearables ICs, transistors, solar cells Which One to Choose? The choice between sapphire and silicon wafers depends largely on the specific application:     Sapphire Wafers: Ideal for applications requiring extreme durability, high-temperature resistance, optical transparency, and electrical insulation. These are preferred in optoelectronics, particularly in LEDs, and in environments where mechanical strength and chemical resistance are essential. Silicon Wafers: The go-to choice for general semiconductor applications due to their semiconductor properties, cost-effectiveness, and the well-established manufacturing processes in the electronics industry. Silicon is the backbone of integrated circuits and other electronic devices. Future of Sapphire Wafers With the growing demand for more durable and high-performance materials in electronics, optoelectronics, and wearables, sapphire wafers are expected to play an increasingly important role. Their unique combination of hardness, thermal stability, and transparency makes them suitable for cutting-edge technologies, including next-generation displays, advanced semiconductor devices, and robust optical sensors. As the cost of sapphire wafer production decreases and the manufacturing processes improve, we can anticipate their wider adoption across industries, further solidifying their place as a critical material in modern technology.