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SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services ...
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ZMSH Case Study: Premier Supplier of High-Quality Synthetic Colored Sapphires
ZMSH Case Study: Premier Supplier of High-Quality Synthetic Colored Sapphires     Introduction ZMSH stands as a leading name in the synthetic gemstone industry, providing an extensive range of high-quality, vibrant colored sapphires. Our offerings include a wide palette of colors such as royal blue, vivid red, yellow, pink, pink-orange, purple, and multiple green tones, including emerald and olive green. With a commitment to precision and excellence, ZMSH has become a preferred partner for businesses that require reliable, visually striking, and durable synthetic gemstones. Highlighting Our Synthetic Gemstones At the core of ZMSH’s product range are synthetic sapphires that emulate the brilliance and quality of natural gemstones while offering numerous advantages. As a synthetic product, these sapphires are carefully manufactured to achieve exceptional color consistency and durability, making them a superior alternative to naturally occurring stones. Benefits of Choosing Synthetic Sapphires Unmatched Consistency: Our lab-created sapphires are produced under controlled conditions, ensuring they meet strict quality standards. This process guarantees a flawless appearance, free from the color and clarity variations often seen in mined gemstones. Broad Color Selection: ZMSH offers a diverse array of colors, including royal blue, ruby red, and softer tones like pink and pink-orange. We also provide several shades of green, from emerald to olive, tailored to meet specific customer demands. This flexibility in color and tone customization makes our sapphires perfect for a wide range of design and industrial purposes. Affordable Pricing: Lab-grown sapphires present a more budget-friendly alternative without sacrificing visual appeal or structural integrity. They provide excellent value for clients who need high-quality gemstones at a fraction of the cost of natural stones, making them ideal for both luxury products and practical applications. Environmentally and Ethically Sound: By opting for synthetic gemstones, customers can avoid the environmental damage and ethical concerns often linked with traditional gemstone mining. ZMSH’s synthetic sapphires are created in an eco-conscious manner, offering a sustainable and responsible choice. Strength and Versatility: Synthetic sapphires possess the same hardness as their natural counterparts, making them ideal for a variety of uses, from high-end jewelry to industrial-grade applications. With a hardness of 9 on the Mohs scale, these gems ensure long-lasting durability in all settings   Conclusion ZMSH is dedicated to delivering top-tier synthetic colored sapphires, offering clients an array of customizable, cost-efficient, and sustainable gemstone solutions. Whether you’re seeking royal blue for elegant accessories, emerald green for industrial components, or any other striking color, ZMSH provides gemstones that combine beauty, consistency, and strength. Our expertise in producing synthetic sapphires allows us to meet the needs of various industries, ensuring reliable quality and ethical practices in every order.
Case Study: ZMSH's Breakthrough with the New 4H/6H-P 3C-N SiC Substrate
Introduction ZMSH has consistently been at the forefront of silicon carbide (SiC) wafer and substrate innovation, known for providing high-performance 6H-SiC and 4H-SiC substrates that are integral to the development of advanced electronic devices. In response to the growing demand for more capable materials in high-power and high-frequency applications, ZMSH has expanded its product offerings with the introduction of the 4H/6H-P 3C-N SiC substrate. This new product represents a significant technological leap by combining traditional 4H/6H polytype SiC substrates with innovative 3C-N SiC films, offering a new level of performance and efficiency for next-generation devices. Existing Product Overview: 6H-SiC and 4H-SiC Substrates Key Features Crystal Structure: Both 6H-SiC and 4H-SiC possess hexagonal crystal structures. 6H-SiC has slightly lower electron mobility and a narrower bandgap, whereas 4H-SiC boasts higher electron mobility and a wider bandgap of 3.2 eV, making it suitable for high-frequency, high-power applications. Electrical Conductivity: Available in both N-type and semi-insulating options, allowing flexibility for various device needs. Thermal Conductivity: These substrates exhibit thermal conductivities ranging from 3.2 to 4.9 W/cm·K, which is essential for dissipating heat in high-temperature environments. Mechanical Strength: The substrates feature a Mohs hardness of 9.2, providing robustness and durability for use in demanding applications. Typical Uses: Commonly employed in power electronics, high-frequency devices, and environments requiring resistance to high temperatures and radiation. Challenges While 6H-SiC and 4H-SiC are highly valued, they encounter certain limitations in specific high-power, high-temperature, and high-frequency scenarios. Issues such as defect rates, limited electron mobility, and narrower bandgap restrict their effectiveness for next-generation applications. The market increasingly requires materials with improved performance and fewer defects to ensure higher operational efficiency. New Product Innovation: 4H/6H-P 3C-N SiC Substrates To overcome the limitations of its earlier SiC substrates, ZMSH has developed the 4H/6H-P 3C-N SiC substrate. This novel product leverages epitaxial growth of 3C-N SiC films on 4H/6H polytype substrates, providing enhanced electronic and mechanical properties. Key Technological Improvements Polytype and Film Integration: The 3C-SiC films are grown epitaxially using chemical vapor deposition (CVD) on 4H/6H substrates, significantly reducing lattice mismatch and defect density, leading to improved material integrity. Enhanced Electron Mobility: The 3C-SiC film offers superior electron mobility compared to the traditional 4H/6H substrates, making it ideal for high-frequency applications. Improved Breakdown Voltage: Tests indicate that the new substrate offers significantly higher breakdown voltage, making it a better fit for power-intensive applications. Defect Reduction: Optimized growth techniques minimize crystal defects and dislocations, ensuring long-term stability in challenging environments. Optoelectronic Capabilities: The 3C-SiC film also introduces unique optoelectronic features, particularly useful for ultraviolet detectors and various other optoelectronic applications. Advantages of the New 4H/6H-P 3C-N SiC Substrate Higher Electron Mobility and Breakdown Strength: The 3C-N SiC film ensures superior stability and efficiency in high-power, high-frequency devices, resulting in longer operational lifespans and higher performance. Improved Thermal Conductivity and Stability: With enhanced heat dissipation capabilities and stability at elevated temperatures (over 1000°C), the substrate is well-suited for high-temperature applications. Expanded Optoelectronic Applications: The substrate’s optoelectronic properties broaden its scope of application, making it ideal for ultraviolet sensors and other advanced optoelectronic devices. Increased Chemical Durability: The new substrate exhibits greater resistance to chemical corrosion and oxidation, which is vital for use in harsh industrial environments. Application Areas The 4H/6H-P 3C-N SiC substrate is ideal for a wide range of cutting-edge applications due to its advanced electrical, thermal, and optoelectronic properties: Power Electronics: Its superior breakdown voltage and thermal management make it the substrate of choice for high-power devices such as MOSFETs, IGBTs, and Schottky diodes. RF and Microwave Devices: The high electron mobility ensures exceptional performance in high-frequency RF and microwave devices. Ultraviolet Detectors and Optoelectronics: The optoelectronic properties of 3C-SiC make it particularly suitable for UV detection and various optoelectronic sensors. Conclusion and Product Recommendation ZMSH’s launch of the 4H/6H-P 3C-N SiC crystal substrate marks a significant technological advancement in SiC substrate materials. This innovative product, with its enhanced electron mobility, reduced defect density, and improved breakdown voltage, is well-positioned to meet the growing demands of the power, frequency, and optoelectronics markets. Its long-term stability under extreme conditions also makes it a highly reliable choice for a range of applications. ZMSH encourages its customers to adopt the 4H/6H-P 3C-N SiC substrate to take advantage of its cutting-edge performance capabilities. This product not only fulfills the stringent requirements of next-generation devices but also helps customers achieve a competitive edge in a rapidly evolving market.   Product Recommendation   4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade       - support customized ones with design artwork   - a cubic crystal (3C SiC), made by SiC monocrystal   - High hardness, Mohs hardness reaches 9.2, second only to diamond.   - excellent thermal conductivity, suitable for high-temperature environments.   - wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.
Connection between wafer flat and notch
Connection between wafer flat and notch   Wafer flat and notch are important features used to determine wafer orientation during wafer manufacturing, and they play a crucial role in wafer processing, alignment and inspection.   1. Wafer Flat   Wafer flat refers to the flat part of the outer edge of the wafer, which is used to mark the specific direction of the wafer and ensure that the wafer can be correctly aligned during the processing and disposing of the wafer. Think of it as a compass pointer that helps guide the correct placement of wafers in the device.     Function and Effect:   Direction indication: The positioning edge usually shows the specific crystal face orientation of the wafer. For example, for a P-type silicon wafer, the positioning edge can help to indicate its main orientation. This is because silicon crystal structures with different crystal orientations differ in physical and electrical properties, and the role of the wafer positioning edge is to ensure that the crystal orientation is correctly identified during wafer processing.   Alignment mark: In wafer manufacturing, it is necessary to perform multiple step alignment operations, such as lithographic alignment, etching alignment, etc. The positioning edge is like a coordinate identifier on a map to help the device align the wafer position and ensure processing accuracy.   Example analogy: The positioning edge of a wafer can be compared to the indicator lines in a jigsaw puzzle, telling us how to correctly assemble the various parts. Without these lines, we might not be able to complete the puzzle correctly.   2. Wafer Notch   A wafer notch is a small cut or notch in the outer edge of a wafer. This groove is similar to the positioning edge and also has the role of marking the direction of the wafer, but its shape and function are different. Typically, the notch is a physical notch, while the positioning edge is flat.     Function and Effect:   Precise positioning: Notch is often used to provide more accurate directional identification, especially in larger wafers such as 300mm wafers. Through the notch, manufacturing equipment is able to more easily identify the orientation of the wafer, avoiding alignment errors due to rotation or slight movement of the wafer.   Avoid alignment errors: The notches serve as markers that help the automation equipment more stably keep the wafer oriented throughout the process. It reduces human error and increases productivity.   Example analogy: You can compare the notch to the valve position of a car tire, although it does not affect the rotation of the tire, but it is a key point of positioning the tire to ensure that the tire can be accurately installed.   3. Connection between wafer flat and notch   Wafer flats and notches are complementary to each other during wafer fabrication. The flats provide a general orientation indication for the wafer, while the notches provide a physical marker for further precise positioning. Both are present in most applications, especially in large wafers (such as 300mm wafers).     Collaborative role in wafer processing:   The flat helps determine the general orientation of the wafer and ensures the initial alignment of the wafer; The notch further provides a physical feature that helps the device identify orientation more precisely, ensuring accuracy throughout the manufacturing process.   4. Points for attention in practical applications   Impact during production: The precision of the flat and notch is critical to the machining accuracy of the entire wafer. If there is an error in the positioning of these features, it may cause the electrical characteristics of the entire wafer to be unstable, affecting the performance of the final chip. Therefore, in the production process, it is very important to ensure the accuracy of these features.   Differences in marking methods: Different wafer suppliers may use different marking methods, for example, some wafers may only have flat and no notch; Some may add notch to the flat. When designing these marks, the compatibility of the equipment and the requirements of the production process must be considered.   5. Conclusion   Wafer flats and notches are different in appearance, but together they play an important role in marking wafer orientation and ensuring alignment accuracy. The flat is similar to a compass, helping us determine the general direction. The notch is a more precise physical feature, helping to ensure consistency of direction during manufacturing. These two are indispensable features in modern wafer manufacturing, especially in the production of large-size wafers, playing a more critical role.     ZMSH related products:     Thanks for watching!

2024

12/23

Collector of colored gemstones, royal origins of sapphires
Collector of colored gemstones, royal origins of sapphires   Since the beginning of this year, the once lukewarm colored gemstone market has quietly appeared to rise against the trend. New consumer demand has fueled the hot colored gemstone market. And the volume and price have risen. According to the China Treasure Association's market research shows that in the first half of 2023, the average price increase of the whole category of colored gems in China ranges from 30%-50%, and the price increase of large carat or relatively rare gems is as high as 100%-150%.     If you want to collect colored gems, we recommend sapphire as your first choice.   Sapphire and ruby, emerald, diamond are known as the four precious gemstones. With a Mohs hardness of 9, sapphire and ruby are two of the hardest and wear-resistant natural minerals in the world after diamond (Mohs hardness of 10). Sapphire has the color of the sky, symbolizing holiness, tranquility and wisdom, being loved and protected by the gods. Clear dark blue sapphire is the most precious. Since 800 BC, it has been regarded as a precious stone. In the Middle Ages, it was prescribed only for religious clergy, royal and noble jewelry decoration. Inherent holiness and nobility is an important reason why it is sought after by the upper class.     Napoleon, emperor of the First French Empire, fell in love with Josephine, who was six years older than him, at the age of 27. He did not have much money at the time, but he bought a simple but classic design ring for Josephine, announcing their engagement.   Napoleon and Josephine with their engagement ring Designed by Marley Etienne Nidot, founder of Chammet Paris Jewellery   The ring, called "Toi et Moi," which means "you and me" in French, consists of a water drop cut sapphire and a water drop cut diamond, two stones of the same weight and opposite directions, set on a plain gold ring holder. This double gemstone ring symbolizes two people deeply intertwined, full of sincere and profound love. In 1804, Napoleon was crowned Emperor of France, Josephine became the empress of the first French Empire, and this ring also added a touch of "coronation of love" legend.   In the 19th century, Britain's Queen Victoria and Prince Albert were very much in love, and Prince Albert took design inspiration from the family crest and customized a small sapphire and diamond crown for Queen Victoria.   from Victoria and Albert Museum, London   Among the Queen's many gorgeous jewelry sets, this little tiara is not the most luxurious, but it has always been the Queen's favorite. Prince Albert died after 21 years of marriage. Queen Victoria was devastated, and for the next 40 years on the throne, she almost no longer wore other colored jewelry, only wearing this little crown to public events many times, to express the deep love and memory of Prince Albert.     In the 20th century, it was necessary to mention this world-famous Car-tier cheetah brooch. The cheetah brooch, designed by jeweller Car-tier and commissioned by the Duchess of Windsor, features a sapphire-studded, diamond-encrusted 152.35-carat Kashmiri round egg face sapphire. Jeanne Toussaint, Cartier's designer at the time, pioneered the use of cheetah elements to reflect the fearless temperament of women, and since then the cheetah has become a unique symbol of Cartier.     Under the wave of self-liberation of Western women in the early 20th century, women saw their own shadow from it: brave, free, elegant, independent spirit.   For most jewelry lovers, sapphire is a high-quality investment collection balanced with daily wear properties of the gem, suitable for daily wear. This point greatly increases the practicality of precious jewelry.   The color of sapphire varies from very light blue to deep blue, like the pure sky, but also like the quiet sea, the same is they are all calm and elegant. Its luster belongs to the sub-diamond luster in gemology, and it will be found after wearing that it will not shine like the diamond luster, but it is stronger than the glass product luster, bright and not flamboyant.   Sapphire has the industry recognized high-quality origin, Kashmir, Madagascar, Myanmar, Sri Lanka are producing top-quality sapphire, is the preferred origin of businesses and consumers. But Kashmir produced sapphire value is the highest, currently due to territorial disputes, production depletion and mining difficulties and other issues have almost stopped production.   The most famous colors in sapphires are the romantic velvety texture of "Cornflower Blue", and the saturation of high blue or purplish tones of "Royal Blue". Sapphires rated in these two colors are rare in production, high in value, and highly collectible, with high-quality Kashmir cornflower sapphires being extremely rare. In 2014, the "Kashmir Imperial Sapphire", a deep corncar blue that caused a sensation at the auction house, weighed 17.16 carats and eventually set a world auction record for the unit price of sapphire carats at that time at $236,404 per carat, for a total price of $4.06 million. Cornflower Blue Royal Blue   The application of sapphire is very wide, whether it is wedding, banquet, workplace business occasions, are very appropriate. In addition to the most mainstream blue sapphire, there are a variety of colored sapphire to choose from. Sapphire in a broad sense is a general term for all colors of gem-grade corundum except red, such as yellow sapphire, pink sapphire, purple sapphire, pink orange Papalacha sapphire and so on.     In ancient Persian Ferdowsi's epic poem, the vast sky is the reflection of sapphire. How would you choose this gem, once the exclusive preserve of the royal family?     ZMSH Related Products   Thanks for watching!

2024

12/11

Detailed version of the silicon wafer semiconductor manufacturing process
Detailed version of the silicon wafer semiconductor manufacturing process   1. POLY SILICON STACKING   First, the polysilicon and dopant are put into a quartz crucible in a monocrystalline furnace, and the temperature is raised to more than 1000 degrees Celsius to obtain the molten polysilicon.       2. INGOT GROWING   Ingot growth is a process in which polycrystalline silicon is made into monocrystalline silicon, and after the polysilicon is heated into a liquid, the thermal environment is precisely controlled to grow into high-quality monocrystal.       Related concepts:   Single crystal growth: After the temperature of the polycrystalline silicon solution is stabilized, the seed crystal is slowly lowered into the silicon melt (the seed crystal will also be melted in the silicon melt), and then the seed crystal is lifted upward at a certain speed for the crystallization process. Subsequently, the dislocations generated during the crystallization process are eliminated by necking operation. When necking to a sufficient length, the monocrystalline silicon diameter is increased to the target value by adjusting the drawing speed and temperature, and then the equal diameter is maintained to the target length. Finally, in order to prevent the dislocation and back-delay, the monocrystalline ingot is finished to obtain the finished monocrystalline ingot, which is taken out after the temperature is cooled.   Methods for preparing monocrystalline silicon: Straight-pull method (CZ method) and zone melting method (FZ method). The Straight-pull method is referred to as CZ method, which is characterized by the aggregation of a straight cylinder type thermal system, heated with graphite resistance, and the polycrystalline silicon installed in a high-purity quartz crucible is melted, and then the seed crystal is inserted into the melt surface for welding, and the seed crystal is rotated at the same time, and then the crucible is reversed, and the seed crystal is slowly lifted upward, and the monocrystalline silicon is obtained through the process of crystal introduction, amplification, shoulder turning, equal diameter growth, and finishing.   The zone melting method is a method of using polycrystalline ingots to melt and grow crystalline semiconductor crystals, using heat energy to generate a melting zone at one end of the semiconductor bar, and then welding single crystal seed crystals. The temperature is adjusted so that the molten zone slowly moves towards the other end of the rod, and through the whole bar, it grows into a single crystal with the same direction as the seed crystal. There are two types of zone melting methods: horizontal zone melting method and vertical suspension zone melting method. The former is mainly used for the purification and single crystal growth of germanium, GaAs and other materials. In the latter, a high-frequency coil is used to create a molten zone at the contact between the single crystal seed crystal and the polycrystalline silicon rod suspended above it in an atmosphere or vacuum furnace chamber, and then the molten zone is moved upward for single crystal growth.   About 85% of the wafers are produced by the Zorgial method and 15% by the zone melting method. According to the application, the monocrystalline silicon grown by the Zyopull method is mainly used for the production of integrated circuit components, while the monocrystalline silicon grown by the zone melting method is mainly used for power semiconductors. The Straight-pull process is mature, and it is easier to grow large-diameter monocrystalline silicon; The melt of the zone melting method is not in contact with the container, is not easy to pollute, and has high purity, which is suitable for the production of high-power electronic devices, but it is difficult to grow large-diameter monocrystalline silicon, which is generally only used for a diameter of 8 inches or less. In the video, it is the straight pull method.   3. INGOT GRINDING&CROPPING     Because it is difficult to control the diameter of the monocrystalline silicon rod in the process of pulling the monocrystal, in order to obtain the standard diameter of the silicon rod, such as 6 inches, 8 inches, 12 inches, etc. After pulling the single crystal, the diameter of the silicon ingot will be tumbled, and the surface of the silicon rod after tumbling is smooth, and the dimensional error is smaller.   4. WIRE SAWING     Using advanced wire cutting technology, the single crystal rod is cut into silicon wafers of appropriate thickness through slicing equipment.   5. EDGE GRINDING   Due to the small thickness of the silicon wafer, the edge of the cut silicon wafer is very sharp, and the purpose of edging is to form a smooth edge, and it is not easy to break in the future chip manufacturing.       6. LAPPING   LAPPING is when the chip is added between the heavy selected plate and the lower plate, and the pressure is applied to rotate the chip with the abrasive agent to flatten the chip.     7. ETCHING   Etching is a process that removes processing damage on the surface of a wafer by dissolving the surface layer that has been damaged by physical processing with a chemical solution.     8. DOUBLE SIDE GRINDING   Double-sided grinding is a process that flattens the wafer by removing small bumps on the surface.     9. RAPID THERMAL PROCESS   RTP is a process of rapidly heating the wafer in a few seconds, so that the defects inside the wafer are uniform, inhibit metal impurities, and prevent abnormal semiconductor operation.       10. POLISHING   Polishing is a process that ensures surface evenness through surface precision machining. The use of polishing paste and polishing cloth, with appropriate temperature, pressure and rotation speed, can eliminate the mechanical damage layer left by the previous process, and obtain a silicon wafer with excellent surface flatness.     11. CLEANING   The purpose of cleaning is to remove the residual organic matter, particles, metals, etc. on the surface of the silicon wafer after polishing, so as to ensure the cleanliness of the surface of the silicon wafer and make it meet the quality requirements of the following process.     12. INSPECTION   Flatness & resistivity tester tests the polished silicon wafers to ensure that the thickness, flatness, local flatness, curvature, warpage, resistivity, etc. of the polished silicon wafers meet customer requirements.     13. PARTICLE COUNTING   PARTICLE COUNTING is a process of accurately checking chip surfaces to determine the number of surface defects and defects through laser scattering.     14. EPI GROWING   EPI GROWING is a process of growing high quality silicon single crystal films on a ground silicon wafer by vapor chemical deposition.     Related concepts: Epitaxial growth: refers to the growth of a single crystal layer on the single crystal substrate (substrate) that has certain requirements and is the same as the substrate crystal, as if the original crystal extends outward for a period. Epitaxial growth technology was developed in the late 1950s and early 1960s. At that time, in order to manufacture high-frequency high-power devices, it is necessary to reduce the series resistance of the collector, and require the material to withstand high voltage and high current, so it is necessary to grow a thin high-resistance epitaxial layer on the low resistance substrate. The epitaxial growth of the new single crystal layer can be different from the substrate in terms of conduction type, resistivity, etc., and can also grow multi-layer single crystals with different thicknesses and different requirements, thus greatly improving the flexibility of device design and device performance.   15. PACKING   Packaging is the packaging of the final qualified product.     ZMSH Related Products:  

2024

12/03