logo
ABOUT US
Your Professional & Reliable Partner.
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services ...
Learn More

0

Year Established

0

Million+
Annual Sales
China SHANGHAI FAMOUS TRADE CO.,LTD High quality
Trust Seal, Credit Check, RoSH and Supplier Capability Assessment. company has strictly quality control system and professional test lab.
China SHANGHAI FAMOUS TRADE CO.,LTD DEVELOPMENT
Internal professional design team and advanced machinery workshop. We can cooperate to develop the products you need.
China SHANGHAI FAMOUS TRADE CO.,LTD MANUFACTURING
Advanced automatic machines, strictly process control system. We can manufacture all the Electrical terminals beyond your demand.
China SHANGHAI FAMOUS TRADE CO.,LTD 100% SERVICE
Bulk and customized small packaging, FOB, CIF, DDU and DDP. Let us help you find the best solution for all your concerns.

Quality Gallium Nitride Wafer & Sapphire Wafer manufacturer

Find Products That Better Meet Your Requirements.
Cases & News
The Latest Hot Spots
ZMSH Case Study: Premier Supplier of High-Quality Synthetic Colored Sapphires
ZMSH Case Study: Premier Supplier of High-Quality Synthetic Colored Sapphires     Introduction ZMSH stands as a leading name in the synthetic gemstone industry, providing an extensive range of high-quality, vibrant colored sapphires. Our offerings include a wide palette of colors such as royal blue, vivid red, yellow, pink, pink-orange, purple, and multiple green tones, including emerald and olive green. With a commitment to precision and excellence, ZMSH has become a preferred partner for businesses that require reliable, visually striking, and durable synthetic gemstones. Highlighting Our Synthetic Gemstones At the core of ZMSH’s product range are synthetic sapphires that emulate the brilliance and quality of natural gemstones while offering numerous advantages. As a synthetic product, these sapphires are carefully manufactured to achieve exceptional color consistency and durability, making them a superior alternative to naturally occurring stones. Benefits of Choosing Synthetic Sapphires Unmatched Consistency: Our lab-created sapphires are produced under controlled conditions, ensuring they meet strict quality standards. This process guarantees a flawless appearance, free from the color and clarity variations often seen in mined gemstones. Broad Color Selection: ZMSH offers a diverse array of colors, including royal blue, ruby red, and softer tones like pink and pink-orange. We also provide several shades of green, from emerald to olive, tailored to meet specific customer demands. This flexibility in color and tone customization makes our sapphires perfect for a wide range of design and industrial purposes. Affordable Pricing: Lab-grown sapphires present a more budget-friendly alternative without sacrificing visual appeal or structural integrity. They provide excellent value for clients who need high-quality gemstones at a fraction of the cost of natural stones, making them ideal for both luxury products and practical applications. Environmentally and Ethically Sound: By opting for synthetic gemstones, customers can avoid the environmental damage and ethical concerns often linked with traditional gemstone mining. ZMSH’s synthetic sapphires are created in an eco-conscious manner, offering a sustainable and responsible choice. Strength and Versatility: Synthetic sapphires possess the same hardness as their natural counterparts, making them ideal for a variety of uses, from high-end jewelry to industrial-grade applications. With a hardness of 9 on the Mohs scale, these gems ensure long-lasting durability in all settings   Conclusion ZMSH is dedicated to delivering top-tier synthetic colored sapphires, offering clients an array of customizable, cost-efficient, and sustainable gemstone solutions. Whether you’re seeking royal blue for elegant accessories, emerald green for industrial components, or any other striking color, ZMSH provides gemstones that combine beauty, consistency, and strength. Our expertise in producing synthetic sapphires allows us to meet the needs of various industries, ensuring reliable quality and ethical practices in every order.
Case Study: ZMSH's Breakthrough with the New 4H/6H-P 3C-N SiC Substrate
Introduction ZMSH has consistently been at the forefront of silicon carbide (SiC) wafer and substrate innovation, known for providing high-performance 6H-SiC and 4H-SiC substrates that are integral to the development of advanced electronic devices. In response to the growing demand for more capable materials in high-power and high-frequency applications, ZMSH has expanded its product offerings with the introduction of the 4H/6H-P 3C-N SiC substrate. This new product represents a significant technological leap by combining traditional 4H/6H polytype SiC substrates with innovative 3C-N SiC films, offering a new level of performance and efficiency for next-generation devices. Existing Product Overview: 6H-SiC and 4H-SiC Substrates Key Features Crystal Structure: Both 6H-SiC and 4H-SiC possess hexagonal crystal structures. 6H-SiC has slightly lower electron mobility and a narrower bandgap, whereas 4H-SiC boasts higher electron mobility and a wider bandgap of 3.2 eV, making it suitable for high-frequency, high-power applications. Electrical Conductivity: Available in both N-type and semi-insulating options, allowing flexibility for various device needs. Thermal Conductivity: These substrates exhibit thermal conductivities ranging from 3.2 to 4.9 W/cm·K, which is essential for dissipating heat in high-temperature environments. Mechanical Strength: The substrates feature a Mohs hardness of 9.2, providing robustness and durability for use in demanding applications. Typical Uses: Commonly employed in power electronics, high-frequency devices, and environments requiring resistance to high temperatures and radiation. Challenges While 6H-SiC and 4H-SiC are highly valued, they encounter certain limitations in specific high-power, high-temperature, and high-frequency scenarios. Issues such as defect rates, limited electron mobility, and narrower bandgap restrict their effectiveness for next-generation applications. The market increasingly requires materials with improved performance and fewer defects to ensure higher operational efficiency. New Product Innovation: 4H/6H-P 3C-N SiC Substrates To overcome the limitations of its earlier SiC substrates, ZMSH has developed the 4H/6H-P 3C-N SiC substrate. This novel product leverages epitaxial growth of 3C-N SiC films on 4H/6H polytype substrates, providing enhanced electronic and mechanical properties. Key Technological Improvements Polytype and Film Integration: The 3C-SiC films are grown epitaxially using chemical vapor deposition (CVD) on 4H/6H substrates, significantly reducing lattice mismatch and defect density, leading to improved material integrity. Enhanced Electron Mobility: The 3C-SiC film offers superior electron mobility compared to the traditional 4H/6H substrates, making it ideal for high-frequency applications. Improved Breakdown Voltage: Tests indicate that the new substrate offers significantly higher breakdown voltage, making it a better fit for power-intensive applications. Defect Reduction: Optimized growth techniques minimize crystal defects and dislocations, ensuring long-term stability in challenging environments. Optoelectronic Capabilities: The 3C-SiC film also introduces unique optoelectronic features, particularly useful for ultraviolet detectors and various other optoelectronic applications. Advantages of the New 4H/6H-P 3C-N SiC Substrate Higher Electron Mobility and Breakdown Strength: The 3C-N SiC film ensures superior stability and efficiency in high-power, high-frequency devices, resulting in longer operational lifespans and higher performance. Improved Thermal Conductivity and Stability: With enhanced heat dissipation capabilities and stability at elevated temperatures (over 1000°C), the substrate is well-suited for high-temperature applications. Expanded Optoelectronic Applications: The substrate’s optoelectronic properties broaden its scope of application, making it ideal for ultraviolet sensors and other advanced optoelectronic devices. Increased Chemical Durability: The new substrate exhibits greater resistance to chemical corrosion and oxidation, which is vital for use in harsh industrial environments. Application Areas The 4H/6H-P 3C-N SiC substrate is ideal for a wide range of cutting-edge applications due to its advanced electrical, thermal, and optoelectronic properties: Power Electronics: Its superior breakdown voltage and thermal management make it the substrate of choice for high-power devices such as MOSFETs, IGBTs, and Schottky diodes. RF and Microwave Devices: The high electron mobility ensures exceptional performance in high-frequency RF and microwave devices. Ultraviolet Detectors and Optoelectronics: The optoelectronic properties of 3C-SiC make it particularly suitable for UV detection and various optoelectronic sensors. Conclusion and Product Recommendation ZMSH’s launch of the 4H/6H-P 3C-N SiC crystal substrate marks a significant technological advancement in SiC substrate materials. This innovative product, with its enhanced electron mobility, reduced defect density, and improved breakdown voltage, is well-positioned to meet the growing demands of the power, frequency, and optoelectronics markets. Its long-term stability under extreme conditions also makes it a highly reliable choice for a range of applications. ZMSH encourages its customers to adopt the 4H/6H-P 3C-N SiC substrate to take advantage of its cutting-edge performance capabilities. This product not only fulfills the stringent requirements of next-generation devices but also helps customers achieve a competitive edge in a rapidly evolving market.   Product Recommendation   4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade       - support customized ones with design artwork   - a cubic crystal (3C SiC), made by SiC monocrystal   - High hardness, Mohs hardness reaches 9.2, second only to diamond.   - excellent thermal conductivity, suitable for high-temperature environments.   - wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.
SiC dislocation detection method
SiC dislocation detection method           In order to grow high-quality SiC crystals, it is necessary to determine the dislocation density and distribution of seed crystals to screen out high-quality seed crystals. In addition, studying the changes of dislocations during the crystal growth process is also conducive to the optimization of the growth process. Mastering the dislocation density and distribution of the substrate is also very important for the study of defects in the epitaxial layer. Therefore, it is necessary to characterize and analyze the crystallization quality and defects of SiC crystals through reasonable techniques to accelerate the production and preparation of high-quality and large-sized SiC. The detection methods for SiC defects can be classified into destructive methods and non-destructive methods. Destructive methods include wet etching and transmission electron microscopy (TEM). Non-destructive methods include non-destructive characterization by cathodic fluorescence (CL), X-ray profiling (XRT) technology, photoluminescence (PL), photostress technology, Raman spectroscopy, etc.         Wet corrosion is the most common method for studying dislocations. Due to the need to carry out corrosion in high-temperature molten alkali, this method is highly destructive. When the corroded SiC wafers are observed under a microscope, corrosion pits of different shapes and sizes can be seen. Generally, there are three shapes of corrosion pits on the Si surface: nearly circular, hexagonal, and shell-shaped. Corresponding to TEDs, TSDs and BPDs defects respectively, Figure 1 shows the morphology of the corrosion pit. With the development of detection equipment, the lattice distortion detector, laser confocal microscope, dislocation detector and other devices developed can comprehensively and intuitively detect the dislocation density and distribution of the corrosion plate. Transmission electron microscopy can observe the subsurface structure of samples at the nanoscale and also detect crystal defects such as BPDs, TEDs and SFs in SiC. As shown in Figure 2, it is a TEM image of dislocations at the interface between seed crystals and growing crystals. CL and PL can non-destructively detect defects on the subsurface of crystals, as shown in Figures 3 and 4. However, compared with PL, CL has a wider measurable band range, and wide bandgap semiconductor materials can be effectively excited.     Fig. 2 TEM of dislocations at the interface between seed crystals and growing crystals under different diffraction vectors       Fig. 3 The principle of dislocations in CL images       X-ray topography is a powerful non-destructive technique that can characterize crystal defects through the width of diffraction peaks. synchrotron monochromatic beam X-ray topography (SMBXT) uses highly perfect reference crystal reflection to obtain monochromatic X-rays, and a series of topography maps are taken at different parts of the reflection curve of the sample. Different regions show different diffraction intensities, thus enabling the measurement of lattice parameters and lattice orientations in different regions. The imaging results of dislocations play an important role in studying the formation of dislocations. As shown in Figure 5(b) and (c), they are the X-ray topography diagrams of dislocations. Optical stress technology can be used for non-destructive testing of the distribution of defects in wafers. Figure 6 shows the characterization of SiC single crystal substrates by optical stress technology. Raman spectroscopy is also a non-destructive subsurface detection method. Feng et al. discovered by Raman scattering method that the sensitive peak positions of MP, TSDs and TEDs are at ~796cm-1, as shown in Figure 7.     Fig. 7 Detection of dislocation by PL method. (a) The PL spectra measured by TSD, TMD, TED and dislocation-free regions of 4H-SiC; (b),(c),(d) Optical microscope images of TED, TSD, and TMD and PL intensity mapping maps; (e) PL image of BPDs     ZMSH offers ultra-large-sized monocrystalline silicon and columnar polycrystalline silicon, and can also customize the processing of various types of silicon components, silicon ingots, silicon rods, silicon rings, silicon focusing rings, silicon cylinders, and silicon exhaust rings.         As a global leader in silicon carbide materials, ZMSH provides a comprehensive portfolio of high-quality SiC products, including 4H/6H-N type, 4H/6H-SEMI insulating type, and 3C-SiC polytypes, with wafer sizes ranging from 2 to 12 inches and customizable voltage ratings from 650V to 3300V. Leveraging proprietary crystal growth technology and precision processing techniques, we have achieved stable mass production with ultra-low defect density (

2025

05/12

Another hot application of SiC - full-color optical waveguides
Another hot application of SiC - full-color optical waveguides     As a typical material of the third-generation semiconductor, SiC and its industrial development have been growing like bamboo shoots after a spring rain in recent years. SiC substrates have established a foothold in electric vehicles and industrial applications, such as in 800V fast charging of electric vehicles. SiC has become a key driving force for this development due to its excellent performance and continuously evolving supply chain. Meanwhile, SiC has excellent thermal conductivity, so a similar rated power can also be achieved in a smaller package.     In addition, we also observe the application of SiC materials in holographic optical waveguides. It is reported that many leading AR enterprises have begun to turn their attention to silicon carbide optical waveguides.     The promotional image of SiC full-color optical waveguide at the SEMICON exhibition       Why can SiC material be used in the field of full-color optical waveguides?     (1) SiC has a high refractive index   The refractive index of SiC (2.6-2.7) is significantly higher than that of traditional glass (1.5-2.0) and resin (1.4-1.7). Due to the high refractive index of SiC, the optical waveguide lenses made from it can provide a wider field of view. Meanwhile, this high refractive index enables SiC to more effectively confine light in the diffractive optical waveguide, thereby reducing light energy loss and enhancing display brightness.     ZMSH's 6inch SiC Wafers SEMI & 4H-N Type       (2) Single-layer design     Theoretically, a single-layer SiC lens can achieve a full-color field of view of over 80°, while glass lenses need to be stacked in three layers to reach 40°.     (3) Reduce weight     The single-layer structure reduces the amount of material used. Combined with the high strength of SiC itself, the overall weight of AR glasses is significantly reduced, enhancing the wearing comfort. ‌     SiC lenses can significantly reduce device weight and expand field of view, making the overall weight of AR glasses break through the 20g critical point, close to the shape of ordinary glasses ‌. The Micro LED display technology with silicon carbide substrate can compress the module volume by 40%, increase the brightness efficiency by 2.3 times, and enhance the display effect of AR glasses.     ZMSH's 2inch SiC Wafers 4H-SEMI Type         (4) Heat dissipation characteristics     SiC material has an excellent thermal conductivity (490W/m·K), which can rapidly conduct the heat generated by the opto-mechanical and computing modules through the waveguide itself, rather than relying on the traditional mirror leg heat dissipation design. This feature resolves the performance degradation issue of AR devices caused by heat accumulation and simultaneously enhances the heat dissipation efficiency. ‌   High thermal conductivity combined with low-stress cutting technology can greatly improve the "rainbow pattern" problem of optical waveguide lenses. Meanwhile, in combination with the integrated heat dissipation design of the waveguide sheet, the operating temperature of the opto-mechanical system can be reduced and the heat dissipation problem can be improved.     (5) Support     The mechanical strength, wear resistance and thermal stability of SiC ensure the structural stability of optical waveguides during long-term use, especially suitable for scenarios requiring high-precision optical components, such as space telescopes and AR glasses.   The characteristics of the above-mentioned SiC material have broken through the bottlenecks of traditional optical waveguides in terms of display effect, volume weight and heat dissipation capacity, and have become a key innovation direction in the field of full-color optical waveguides. ‌     ZMSH provide a comprehensive range of high-quality silicon carbide (SiC) substrates, including 4H/6H-N type, 4H/6H-SEMI insulating type, 6H/4H-P type, and 3C-N type polytypes, meeting the demanding requirements of power devices and RF chips. Through proprietary crystal growth technologies and precision processing techniques, we have achieved mass production of large-diameter SiC substrates (2-12 inches) with ultra-low defect density (

2025

05/08

Geoscience Knowledge | Sapphire: There's More Than just Blue in the "top-tier" wardrobe
Geoscience Knowledge  Sapphire: There's More Than just Blue in the "top-tier" wardrobe       Sapphire, the "leading figure" of the corundum family, resembles an elegant gentleman dressed in a "deep blue suit." Yet, upon closer acquaintance, one discovers its wardrobe encompasses far more than just "blue" or even "dark blue." From "cornflower blue" to "royal blue," each hue dazzles with brilliance. When blue might seem monotonous, it reveals other shades: green, gray, yellow, orange, purple, pink, and brown.     Sapphire of different colors       Sapphire Chemical Composition: Al₂O₃ Color: The color variations in sapphire result from elemental substitutions within its crystal lattice, encompassing all corundum colors except red (ruby). Hardness: Mohs hardness of 9, second only to diamond. Density: 3.95–4.1 g/cm³ Birefringence: 0.008–0.010 Luster: Transparent to translucent, exhibiting vitreous to sub-adamantine. Special Optical Effects: Some sapphires display asterism (the "star effect"), where microscopic inclusions (e.g., rutile) reflect light to form six-rayed stars on cabochon-cut stones.   Six-shot Starlight Sapphire           Primary Sources   Renowned origins include Madagascar, Sri Lanka, Myanmar, Australia, India, and parts of Africa.   Sapphires from different regions exhibit distinct characteristics. For example: Myanmar and Kashmir sapphires derive vivid blue hues from titanium impurities. Australian, Thai, and Chinese sapphires exhibit darker tones due to iron content.         ZMSH's synthetic gemstones——Royal Blue           Ore Formation Mechanisms   Sapphire formation involves complex geological processes: Metamorphic Origin: Corundum forms when magnesium-rich rocks (e.g., marble) interact with titanium/iron-rich fluids under high pressure (6–12 kbar) and temperatures (700–900°C). The "velvet effect" inclusions in Kashmir sapphires are signatures of these extreme conditions.         Magmatic Origin: Basaltic magma transports corundum crystals to the surface, creating deposits like Mogok (Myanmar), where rutile inclusions often align to form asterism.     The characteristic arrow-shaped rutile inclusions in Mogok sapphires from Myanmar       Pegmatitic Type: Sri Lanka’s alluvial sapphires originate from weathered granitic pegmatites.     Sri Lankan placer sapphire rough stone         Sapphires span jewelry, science, education, and artistic expression: Gemstone Value: Prized for their beauty, hardness, and durability, sapphires are used in high-end jewelry (rings, necklaces, earrings, bracelets).       Sapphires of different colors and chromic ions            

2025

05/06