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SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services ...
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ZMSH Case Study: Premier Supplier of High-Quality Synthetic Colored Sapphires
ZMSH Case Study: Premier Supplier of High-Quality Synthetic Colored Sapphires     Introduction ZMSH stands as a leading name in the synthetic gemstone industry, providing an extensive range of high-quality, vibrant colored sapphires. Our offerings include a wide palette of colors such as royal blue, vivid red, yellow, pink, pink-orange, purple, and multiple green tones, including emerald and olive green. With a commitment to precision and excellence, ZMSH has become a preferred partner for businesses that require reliable, visually striking, and durable synthetic gemstones. Highlighting Our Synthetic Gemstones At the core of ZMSH’s product range are synthetic sapphires that emulate the brilliance and quality of natural gemstones while offering numerous advantages. As a synthetic product, these sapphires are carefully manufactured to achieve exceptional color consistency and durability, making them a superior alternative to naturally occurring stones. Benefits of Choosing Synthetic Sapphires Unmatched Consistency: Our lab-created sapphires are produced under controlled conditions, ensuring they meet strict quality standards. This process guarantees a flawless appearance, free from the color and clarity variations often seen in mined gemstones. Broad Color Selection: ZMSH offers a diverse array of colors, including royal blue, ruby red, and softer tones like pink and pink-orange. We also provide several shades of green, from emerald to olive, tailored to meet specific customer demands. This flexibility in color and tone customization makes our sapphires perfect for a wide range of design and industrial purposes. Affordable Pricing: Lab-grown sapphires present a more budget-friendly alternative without sacrificing visual appeal or structural integrity. They provide excellent value for clients who need high-quality gemstones at a fraction of the cost of natural stones, making them ideal for both luxury products and practical applications. Environmentally and Ethically Sound: By opting for synthetic gemstones, customers can avoid the environmental damage and ethical concerns often linked with traditional gemstone mining. ZMSH’s synthetic sapphires are created in an eco-conscious manner, offering a sustainable and responsible choice. Strength and Versatility: Synthetic sapphires possess the same hardness as their natural counterparts, making them ideal for a variety of uses, from high-end jewelry to industrial-grade applications. With a hardness of 9 on the Mohs scale, these gems ensure long-lasting durability in all settings   Conclusion ZMSH is dedicated to delivering top-tier synthetic colored sapphires, offering clients an array of customizable, cost-efficient, and sustainable gemstone solutions. Whether you’re seeking royal blue for elegant accessories, emerald green for industrial components, or any other striking color, ZMSH provides gemstones that combine beauty, consistency, and strength. Our expertise in producing synthetic sapphires allows us to meet the needs of various industries, ensuring reliable quality and ethical practices in every order.
Case Study: ZMSH's Breakthrough with the New 4H/6H-P 3C-N SiC Substrate
Introduction ZMSH has consistently been at the forefront of silicon carbide (SiC) wafer and substrate innovation, known for providing high-performance 6H-SiC and 4H-SiC substrates that are integral to the development of advanced electronic devices. In response to the growing demand for more capable materials in high-power and high-frequency applications, ZMSH has expanded its product offerings with the introduction of the 4H/6H-P 3C-N SiC substrate. This new product represents a significant technological leap by combining traditional 4H/6H polytype SiC substrates with innovative 3C-N SiC films, offering a new level of performance and efficiency for next-generation devices. Existing Product Overview: 6H-SiC and 4H-SiC Substrates Key Features Crystal Structure: Both 6H-SiC and 4H-SiC possess hexagonal crystal structures. 6H-SiC has slightly lower electron mobility and a narrower bandgap, whereas 4H-SiC boasts higher electron mobility and a wider bandgap of 3.2 eV, making it suitable for high-frequency, high-power applications. Electrical Conductivity: Available in both N-type and semi-insulating options, allowing flexibility for various device needs. Thermal Conductivity: These substrates exhibit thermal conductivities ranging from 3.2 to 4.9 W/cm·K, which is essential for dissipating heat in high-temperature environments. Mechanical Strength: The substrates feature a Mohs hardness of 9.2, providing robustness and durability for use in demanding applications. Typical Uses: Commonly employed in power electronics, high-frequency devices, and environments requiring resistance to high temperatures and radiation. Challenges While 6H-SiC and 4H-SiC are highly valued, they encounter certain limitations in specific high-power, high-temperature, and high-frequency scenarios. Issues such as defect rates, limited electron mobility, and narrower bandgap restrict their effectiveness for next-generation applications. The market increasingly requires materials with improved performance and fewer defects to ensure higher operational efficiency. New Product Innovation: 4H/6H-P 3C-N SiC Substrates To overcome the limitations of its earlier SiC substrates, ZMSH has developed the 4H/6H-P 3C-N SiC substrate. This novel product leverages epitaxial growth of 3C-N SiC films on 4H/6H polytype substrates, providing enhanced electronic and mechanical properties. Key Technological Improvements Polytype and Film Integration: The 3C-SiC films are grown epitaxially using chemical vapor deposition (CVD) on 4H/6H substrates, significantly reducing lattice mismatch and defect density, leading to improved material integrity. Enhanced Electron Mobility: The 3C-SiC film offers superior electron mobility compared to the traditional 4H/6H substrates, making it ideal for high-frequency applications. Improved Breakdown Voltage: Tests indicate that the new substrate offers significantly higher breakdown voltage, making it a better fit for power-intensive applications. Defect Reduction: Optimized growth techniques minimize crystal defects and dislocations, ensuring long-term stability in challenging environments. Optoelectronic Capabilities: The 3C-SiC film also introduces unique optoelectronic features, particularly useful for ultraviolet detectors and various other optoelectronic applications. Advantages of the New 4H/6H-P 3C-N SiC Substrate Higher Electron Mobility and Breakdown Strength: The 3C-N SiC film ensures superior stability and efficiency in high-power, high-frequency devices, resulting in longer operational lifespans and higher performance. Improved Thermal Conductivity and Stability: With enhanced heat dissipation capabilities and stability at elevated temperatures (over 1000°C), the substrate is well-suited for high-temperature applications. Expanded Optoelectronic Applications: The substrate’s optoelectronic properties broaden its scope of application, making it ideal for ultraviolet sensors and other advanced optoelectronic devices. Increased Chemical Durability: The new substrate exhibits greater resistance to chemical corrosion and oxidation, which is vital for use in harsh industrial environments. Application Areas The 4H/6H-P 3C-N SiC substrate is ideal for a wide range of cutting-edge applications due to its advanced electrical, thermal, and optoelectronic properties: Power Electronics: Its superior breakdown voltage and thermal management make it the substrate of choice for high-power devices such as MOSFETs, IGBTs, and Schottky diodes. RF and Microwave Devices: The high electron mobility ensures exceptional performance in high-frequency RF and microwave devices. Ultraviolet Detectors and Optoelectronics: The optoelectronic properties of 3C-SiC make it particularly suitable for UV detection and various optoelectronic sensors. Conclusion and Product Recommendation ZMSH’s launch of the 4H/6H-P 3C-N SiC crystal substrate marks a significant technological advancement in SiC substrate materials. This innovative product, with its enhanced electron mobility, reduced defect density, and improved breakdown voltage, is well-positioned to meet the growing demands of the power, frequency, and optoelectronics markets. Its long-term stability under extreme conditions also makes it a highly reliable choice for a range of applications. ZMSH encourages its customers to adopt the 4H/6H-P 3C-N SiC substrate to take advantage of its cutting-edge performance capabilities. This product not only fulfills the stringent requirements of next-generation devices but also helps customers achieve a competitive edge in a rapidly evolving market.   Product Recommendation   4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade       - support customized ones with design artwork   - a cubic crystal (3C SiC), made by SiC monocrystal   - High hardness, Mohs hardness reaches 9.2, second only to diamond.   - excellent thermal conductivity, suitable for high-temperature environments.   - wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.
How does stress develop in quartz materials?
How does stress develop in quartz materials?     1. Thermal Stress During Cooling (Primary Cause) Quartz glass develops internal stress when exposed to non-uniform temperatures. At any given temperature, quartz glass exhibits a specific atomic structure that is most "suitable" or stable under those thermal conditions. The spacing between atoms changes with temperature—this is known as thermal expansion. When quartz glass experiences uneven heating or cooling, differential expansion occurs.   Stress typically arises when hotter regions attempt to expand but are constrained by surrounding cooler areas. This results in compressive stress, which usually does not damage the product. If the temperature is high enough to soften the quartz glass, the stress may be relieved. However, if the cooling process is too rapid, the viscosity of the material increases too quickly, and the atomic structure cannot adjust in time to accommodate the temperature drop. This leads to the formation of tensile stress, which is more likely to cause structural damage.   Stress increases progressively as the temperature drops and can reach high levels after cooling ends. In fact, when the viscosity of quartz glass exceeds 10^4.6 poise, the temperature is referred to as the strain point—at this stage, the viscosity is too high for stress relaxation to occur.     Normal>Deformed>           2. Stress from Phase Transition and Structural Relaxation   Metastable Structural Relaxation: In the molten state, quartz exhibits a highly disordered atomic arrangement. During cooling, atoms attempt to transition toward a more stable configuration. However, due to the high viscosity of the glassy state, atomic movement is limited, leaving the structure in a metastable state. This generates relaxation stress, which may be slowly released over time (as observed in the aging phenomenon in glasses).   Microscopic Crystallization Tendency: If molten quartz is held at specific temperature ranges (e.g., near the devitrification temperature), microscopic crystallization may occur (e.g., precipitation of cristobalite microcrystals). The volume mismatch between crystalline and amorphous phases can induce phase transition stress.       3. External Loads and Mechanical Actions 1) Stress Induced During Machining Mechanical processing such as cutting, grinding, and polishing can introduce surface lattice distortion, resulting in machining stress. For example, cutting with a grinding wheel generates localized heat and mechanical pressure at the edge, leading to stress concentration. Improper techniques during drilling or slotting can create notches that act as crack initiation sites.   2) Load Stress in Service Environments When used as a structural material, fused quartz may bear mechanical loads such as pressure or bending, generating macroscopic stress. For instance, quartz containers holding heavy substances develop bending stress.       4. Thermal Shock and Sudden Temperature Changes 1) Instantaneous Stress from Rapid Heating or Cooling Although fused quartz has an extremely low coefficient of thermal expansion (~0.5×10⁻⁶/°C), rapid temperature changes (e.g., heating from room temperature to high temperatures or immersion in ice water) can result in localized thermal expansion or contraction, causing instantaneous thermal stress. Laboratory glassware made of quartz may fracture under such thermal shocks. 2) Cyclic Temperature Fluctuations Under long-term cyclic thermal environments (e.g., furnace linings or high-temperature optical windows), repeated thermal expansion and contraction can accumulate fatigue stress, accelerating material aging and cracking.           5. Chemical Effects and Stress Coupling 1) Corrosion and Dissolution Stress When fused quartz comes into contact with strong alkaline solutions (e.g., NaOH) or high-temperature acidic gases (e.g., HF), its surface may undergo chemical corrosion or dissolution, disrupting structural uniformity and causing chemical stress. Alkaline attack can cause surface volume changes or form microcracks. 2) CVD-Induced Stress In chemical vapor deposition (CVD) processes, coating quartz with materials like SiC may introduce interfacial stress due to mismatches in thermal expansion coefficients or elastic moduli between the film and the substrate. Upon cooling, such stress may cause film delamination or substrate cracking.     6. Internal Defects and Impurities 1) Bubbles and Embedded Impurities During melting, residual gas bubbles or impurities (e.g., metal ions or unmelted particles) may become trapped in fused quartz. The difference in physical properties (e.g., thermal expansion coefficient or modulus) between these inclusions and the surrounding glass can lead to localized stress concentration, increasing the risk of crack formation around bubbles under load. 2) Microcracks and Structural Defects Impurities in raw materials or melting defects can lead to microcracks in the quartz. When subjected to external loads or temperature fluctuations, stress concentration at crack tips can intensify, accelerating crack propagation and ultimately compromising the material's integrity.   Our Products ​    

2025

07/02

Comprehensive Overview of Advanced Ceramics Used in Semiconductor Equipment
Comprehensive Overview of Advanced Ceramics Used in Semiconductor Equipment   Precision ceramic components are essential elements in core equipment for key semiconductor manufacturing processes such as photolithography, etching, thin film deposition, ion implantation, and CMP. These parts—including bearings, guide rails, chamber liners, electrostatic chucks, and robotic arms—are especially critical inside process chambers, where they serve functions such as support, protection, and flow control. This article provides a systematic overview of how precision ceramics are applied in major semiconductor fabrication equipment.       Front-End Processes: Precision Ceramics in Wafer Fabrication Equipment 1. Photolithography Equipment   To ensure high process accuracy in advanced photolithography systems, a wide range of ceramic components with excellent multifunctionality, structural stability, thermal resistance, and dimensional precision are used. These include electrostatic chucks, vacuum chucks, blocks, water-cooled magnet bases, reflectors, guide rails, stages, and mask holders.   Key ceramic components: Electrostatic chuck, motion stage   Main materials:Electrostatic chucks: Alumina (Al₂O₃), Silicon Nitride (Si₃N₄), Motion stages: Cordierite ceramics, Silicon Carbide (SiC)   Technical challenges: Complex structure design, raw material control and sintering, temperature management, and ultra-precision machining. The material system of lithography motion stages is crucial for achieving high accuracy and scanning speed. Materials must feature high specific stiffness and low thermal expansion to withstand high-speed movements with minimal distortion—thus improving throughput and maintaining precision.       2. Etching Equipment   Etching is critical for transferring circuit patterns from the mask to the wafer. Key ceramic components used in etching tools include the chamber, viewport window, gas distribution plate, nozzles, insulator rings, cover plates, focus rings, and electrostatic chucks. Key ceramic components: Electrostatic chuck, focus ring, gas distribution plate   Main ceramic materials: Quartz, SiC, AlN, Al₂O₃, Si₃N₄, Y₂O₃     Etching Chamber: With shrinking device geometries, stricter contamination controls are required. Ceramics are preferred over metals to prevent particle and metal ion contamination.     Material requirements: High purity, minimal metal contamination Chemically inert, especially to halogen-based etching gases High density, minimal porosity Fine grain, low grain boundary content Good mechanical machinability Specific electrical or thermal properties if needed   Gas Distribution Plate: Featuring hundreds or thousands of precision-drilled microholes, these plates uniformly distribute process gases, ensuring consistent deposition/etching.   Challenges: Demands on hole diameter uniformity and burr-free inner walls are extremely high. Even slight deviations can cause film thickness variation and yield loss.   Main materials: CVD SiC, Alumina, Silicon Nitride   Focus Ring: Designed to balance plasma uniformity and match the conductivity of the silicon wafer. Compared to traditional conductive silicon (which reacts with fluorine plasma to form volatile SiF₄), SiC offers similar conductivity and superior plasma resistance, enabling longer life.   Material: Silicon Carbide (SiC) ​       3. Thin Film Deposition Equipment (CVD / PVD)     In CVD and PVD systems, key ceramic parts include electrostatic chucks, gas distribution plates, heaters, and chamber liners. Key ceramic components: Electrostatic chuck, ceramic heater   Main materials: Heaters: Aluminum Nitride (AlN), Alumina (Al₂O₃)   Ceramic Heater: A critical component located inside the process chamber, directly in contact with the wafer. It supports the wafer and ensures uniform, stable process temperatures across its surface. ​   Back-End Processes: Precision Ceramics in Packaging & Testing Equipment       1. CMP (Chemical Mechanical Planarization) CMP equipment utilizes ceramic polishing plates, handling arms, alignment platforms, and vacuum chucks for high-precision surface planarization.   2. Wafer Dicing and Packaging Equipment Key ceramic components: Dicing Blades: Diamond-ceramic composites, cutting speed ~300 mm/s, edge chipping

2025

07/02

KeyPoints in the preparation of high-quality silicon carbide single crystals
Preparation Methods of SiC Single Crystals: Focus on PVT Method   The main preparation methods of silicon carbide (SiC) single crystals include Physical Vapor Transport (PVT), Top Seeded Solution Growth (TSSG), and High-Temperature Chemical Vapor Deposition (HT-CVD). Among them, the PVT method is the most widely adopted in industrial production due to its simple equipment, ease of control, relatively low equipment cost, and operating expenses.     Key Technologies in PVT Growth of SiC Crystals Schematic diagram of PVT growth structure       Key considerations for growing SiC crystals using the Physical Vapor Transport (PVT) method include:   Purity of Graphite Materials in the Thermal Field The impurity content in graphite parts must be below 5×10⁻⁶, and the impurity content in insulation felt should be below 10×10⁻⁶. The concentrations of boron (B) and aluminum (Al) must be less than 0.1×10⁻⁶.   Correct Polarity Selection of Seed Crystal The C (0001) face is suitable for growing 4H-SiC crystals. The Si (0001) face is suitable for growing 6H-SiC crystals.   Off-Axis Seed Crystal Usage Off-axis seeds alter the growth symmetry and help reduce the formation of defects in the crystal.   Good Seed Crystal Bonding Process Ensures mechanical stability and uniformity during the growth process.   Stable Growth Interface During the Process Maintaining a stable solid–gas interface is crucial for high-quality crystal formation.     Critical Technologies for SiC Crystal Growth   Doping Technology in SiC Powder Cerium (Ce) doping in the source powder promotes stable growth of single-phase 4H-SiC crystals. Benefits include increased growth rate, improved orientation control, reduced impurities and defects, and enhanced single-phase stability and crystal quality. It also helps suppress backside erosion and improves the single crystallinity.   Control of Axial and Radial Thermal Gradients Axial thermal gradient affects polytype stability and growth efficiency. Low gradients can result in unwanted polytypes and reduced material transport. Proper axial and radial gradients ensure fast growth and stable crystal quality.   Basal Plane Dislocation (BPD) Control BPDs are caused by shear stress exceeding the critical shear stress of SiC. These defects form during the growth and cooling stages due to slip system activation. Reducing internal stress minimizes BPD formation.   Gas Phase Composition Ratio Control A higher carbon-to-silicon ratio in the gas phase helps suppress polytype conversion. It reduces large step-bunching, maintains growth surface information, and enhances polytype stability.   ​   Low-Stress Growth Control Internal stress leads to lattice bending, crystal cracking, and increased BPDs, negatively impacting epitaxy and device performance. Key stress reduction strategies include:   Optimizing thermal field and process parameters to approach equilibrium growth.   Redesigning crucible structure to allow free crystal expansion.   Adjusting seed bonding methods, e.g., leaving a 2 mm gap between the seed and graphite holder to accommodate thermal expansion differences.   Controlling post-growth annealing, including in-situ furnace cooling and optimized annealing parameters to release residual stress.     Development Trends in SiC Crystal Growth Technology   In the future, high-quality SiC single crystal growth will advance in the following directions:   Larger Wafer Size SiC wafer diameter has grown from a few millimeters to 6-inch, 8-inch, and even 12-inch. Larger wafers improve production efficiency, reduce costs, and meet high-power device requirements.   Higher Quality While SiC crystal quality has significantly improved, defects such as micropipes, dislocations, and impurities still persist. Eliminating these defects is critical for ensuring device performance and reliability.   Lower Cost The current high cost of SiC crystals limits their widespread adoption. Cost reductions can be achieved through process optimization, improved efficiency, and cheaper raw materials.     Conclusion: High-quality SiC single crystal growth is a key area of semiconductor material research. With continuous technological progress, SiC crystal growth techniques will evolve further, laying a solid foundation for its application in high-temperature, high-frequency, and high-power electronics.   Our Products:  

2025

07/08