Introduction
ZMSH has consistently been at the forefront of silicon carbide (SiC) wafer and substrate innovation, known for providing high-performance 6H-SiC and 4H-SiC substrates that are integral to the development of advanced electronic devices. In response to the growing demand for more capable materials in high-power and high-frequency applications, ZMSH has expanded its product offerings with the introduction of the 4H/6H-P 3C-N SiC substrate. This new product represents a significant technological leap by combining traditional 4H/6H polytype SiC substrates with innovative 3C-N SiC films, offering a new level of performance and efficiency for next-generation devices.
Existing Product Overview: 6H-SiC and 4H-SiC Substrates
Key Features
- Crystal Structure: Both 6H-SiC and 4H-SiC possess hexagonal crystal structures. 6H-SiC has slightly lower electron mobility and a narrower bandgap, whereas 4H-SiC boasts higher electron mobility and a wider bandgap of 3.2 eV, making it suitable for high-frequency, high-power applications.
- Electrical Conductivity: Available in both N-type and semi-insulating options, allowing flexibility for various device needs.
- Thermal Conductivity: These substrates exhibit thermal conductivities ranging from 3.2 to 4.9 W/cm·K, which is essential for dissipating heat in high-temperature environments.
- Mechanical Strength: The substrates feature a Mohs hardness of 9.2, providing robustness and durability for use in demanding applications.
- Typical Uses: Commonly employed in power electronics, high-frequency devices, and environments requiring resistance to high temperatures and radiation.
Challenges While 6H-SiC and 4H-SiC are highly valued, they encounter certain limitations in specific high-power, high-temperature, and high-frequency scenarios. Issues such as defect rates, limited electron mobility, and narrower bandgap restrict their effectiveness for next-generation applications. The market increasingly requires materials with improved performance and fewer defects to ensure higher operational efficiency.
New Product Innovation: 4H/6H-P 3C-N SiC Substrates
To overcome the limitations of its earlier SiC substrates, ZMSH has developed the 4H/6H-P 3C-N SiC substrate. This novel product leverages epitaxial growth of 3C-N SiC films on 4H/6H polytype substrates, providing enhanced electronic and mechanical properties.
Key Technological Improvements
- Polytype and Film Integration: The 3C-SiC films are grown epitaxially using chemical vapor deposition (CVD) on 4H/6H substrates, significantly reducing lattice mismatch and defect density, leading to improved material integrity.
- Enhanced Electron Mobility: The 3C-SiC film offers superior electron mobility compared to the traditional 4H/6H substrates, making it ideal for high-frequency applications.
- Improved Breakdown Voltage: Tests indicate that the new substrate offers significantly higher breakdown voltage, making it a better fit for power-intensive applications.
- Defect Reduction: Optimized growth techniques minimize crystal defects and dislocations, ensuring long-term stability in challenging environments.
- Optoelectronic Capabilities: The 3C-SiC film also introduces unique optoelectronic features, particularly useful for ultraviolet detectors and various other optoelectronic applications.
Advantages of the New 4H/6H-P 3C-N SiC Substrate
- Higher Electron Mobility and Breakdown Strength: The 3C-N SiC film ensures superior stability and efficiency in high-power, high-frequency devices, resulting in longer operational lifespans and higher performance.
- Improved Thermal Conductivity and Stability: With enhanced heat dissipation capabilities and stability at elevated temperatures (over 1000°C), the substrate is well-suited for high-temperature applications.
- Expanded Optoelectronic Applications: The substrate’s optoelectronic properties broaden its scope of application, making it ideal for ultraviolet sensors and other advanced optoelectronic devices.
- Increased Chemical Durability: The new substrate exhibits greater resistance to chemical corrosion and oxidation, which is vital for use in harsh industrial environments.
Application Areas
The 4H/6H-P 3C-N SiC substrate is ideal for a wide range of cutting-edge applications due to its advanced electrical, thermal, and optoelectronic properties:
- Power Electronics: Its superior breakdown voltage and thermal management make it the substrate of choice for high-power devices such as MOSFETs, IGBTs, and Schottky diodes.
- RF and Microwave Devices: The high electron mobility ensures exceptional performance in high-frequency RF and microwave devices.
- Ultraviolet Detectors and Optoelectronics: The optoelectronic properties of 3C-SiC make it particularly suitable for UV detection and various optoelectronic sensors.
Conclusion and Product Recommendation
ZMSH’s launch of the 4H/6H-P 3C-N SiC crystal substrate marks a significant technological advancement in SiC substrate materials. This innovative product, with its enhanced electron mobility, reduced defect density, and improved breakdown voltage, is well-positioned to meet the growing demands of the power, frequency, and optoelectronics markets. Its long-term stability under extreme conditions also makes it a highly reliable choice for a range of applications.
ZMSH encourages its customers to adopt the 4H/6H-P 3C-N SiC substrate to take advantage of its cutting-edge performance capabilities. This product not only fulfills the stringent requirements of next-generation devices but also helps customers achieve a competitive edge in a rapidly evolving market.
Product Recommendation
4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade
- support customized ones with design artwork
- a cubic crystal (3C SiC), made by SiC monocrystal
- High hardness, Mohs hardness reaches 9.2, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature environments.
- wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.
