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2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

Products - Gallium Nitride Wafer
  • High Light

    gan substrate

    ,

    gan template

  • Material
    GaN Single Crystal
  • Method
    HVPE
  • Size
    10x10mm, 5x5mm
  • Thickness
    350um
  • Industry
    LD，led，laser Device，detector，
  • Surface
    Sing Or Double Side Poliseed
  • Grade
    For LD
  • Type
    Non-Polar Freestanding GaN Substrates
  • Place of Origin
    CHINA
  • Brand Name
    zmkj
  • Model Number
    GaN-non-polar
  • Minimum Order Quantity
    1pc
  • Price
    by case
  • Packaging Details
    single wafer case in 100-grade cleaning room
  • Delivery Time
    2-4weeks
  • Payment Terms
    L/C, T/T

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

  • 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material
  • 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material
  • 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material
  • 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material
  • 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)

 

GaN  Wafer Characteristic 

Product  Gallium nitride (GaN)  substrates
Product Description: Saphhire GaN template is presented Epitxial hydride vapor phase epitaxy (HVPE) method. In the HVPE process, the acid produced by the reaction GaCl, which is in turn reacted with ammonia to produce gallium nitride melt. Epitaxial GaN template is a cost-effective way to replace gallium nitride single crystal substrate.
Technical parameters:
Size 2 "round; 50mm ± 2mm
Product Positioning C-axis <0001> ± 1.0.
Conductivity type N-type ＆ P-type
Resistivity R <0.5Ohm-cm
Surface treatment (Ga face) AS Grown
RMS <1nm
Available surface area > 90%
Specifications:

 

GaN epitaxial film (C Plane), N-type, 2 "* 30 microns, sapphire;

GaN epitaxial film (C Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (R Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (M Plane), N-type, 2 "* 5 microns sapphire.

AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg)

Note: according to customer demand special plug orientation and size.
Standard Packaging: 1000 clean room, 100 clean bag or single box packaging

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material 0

Application 

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

  • Laser Projection Display, Power Device, etc.
  • Date storage
  • Energy-efficient lighting
  • Full color fla display
  • Laser Projecttions
  • High- Efficiency Electronic devices
  • High- Frequency Microwave Devices
  • High-energy Detection and imagine
  • New energy solor hydrogen technology
  • Environment Detection and biological medicine
  • Light source terahertz band

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material 1 
 
Specifications:

  Non-Polar Freestanding GaN Substrates(a-plane and m-plane)
Item GaN-FS-a GaN-FS-m
Dimensions 5.0mm×5.5mm
5.0mm×10.0mm
5.0mm×20.0mm
Customized Size
Thickness 330 ± 25 µm
Orientation a-plane ± 1° m-plane ± 1°
TTV ≤15 µm
BOW ≤20 µm
Conduction Type N-type
Resistivity(300K) < 0.5 Ω·cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

 

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material 2

2.ZMKJ  provides GaN wafer to microelectronics and optoelectronics industry in diameter 2" to 4".

GaN epitaxial wafers are grown by HVPE or MOCVD method , can be used as an ideal and excellent substrate for high frequency , high speed and high power device . Currently we can offer GaN epitaxial wafer for fundamental research and device product development use, including GaN template , AlGaN

and InGaN . Besides standard GaN based wafer,you are welcome to discuss your epi layer structure .
 
2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material 3

Tags:

gan template

gan substrate

aln template

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