2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

Place of Origin china
Brand Name zmkj
Model Number 4inch--N,4H-semi
Minimum Order Quantity 1pcs
Price by required
Packaging Details Packaged in a class 100 clean room environment, in cassettes of single wafer containers
Delivery Time 10-20days
Supply Ability 100pcs/months
Product Details
Material Sic Crystal Industry Semiconductor Wafer
Application Semiconductor, Led, Device, Power Electronics,5G Color Blue, Green, White
Type 4H,6H, DOPED, No Doped, High Purity
High Light

silicon carbide substrate

,

sic substrate

Leave a Message
Product Description

4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device,

 

 Application areas

 

1 high frequency and high power electronic devices Schottky diodes,

 

    JFET, BJT, PiN, diodes, IGBT, MOSFET

 

2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

 

Advantagement

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

 

 

Silicon Carbide SiC crystal substrate wafer carborundum

SILICON CARBIDE MATERIAL PROPERTIES

Product Name: Silicon carbide (SiC) crystal substrate
Product Description: 2-6inch 
Technical parameters:
Cell structure Hexagonal
Lattice constant a = 3.08 Å c = 15.08 Å
Priorities ABCACB (6H)
Growth method MOCVD
Direction Growth axis or Partial (0001) 3.5 °
Polishing Si surface polishing
Bandgap 2.93 eV (indirect)
Conductivity type N or seimi ,high purity
Resistivity 0.076 ohm-cm
Permittivity e (11) = e (22) = 9.66 e (33) = 10.33
Thermal conductivity @ 300K 5 W / cm. K
Hardness 9.2 Mohs
Specifications: 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A
Standard Packaging: 1000 clean room, 100 clean bag or single box packaging

 

2. substrates size of standard

4 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 100.0 mm±0.5 mm
Thickness 350 μm±25μm (200-500um thickness also is ok)
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density ≤1 cm-2 ≤5 cm-2 ≤15 cm-2 ≤50 cm-2
Resistivity 4H-N 0.015~0.028 Ω•cm
6H-N 0.02~0.1 Ω•cm
4/6H-SI ≥1E5 Ω·cm
Primary Flat and length {10-10}±5.0° ,32.5 mm±2.0 mm
Secondary Flat Length 18.0mm±2.0 mm
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion 3 mm
TTV/Bow /Warp ≤15μm /≤25μm /≤40μm
Roughness Polish Ra≤1 nm ,CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each
Contamination by high intensity light None

Sic wafer & ingots  2-6inch and other customized size   also can be provided.

 

 

3.Pictures of delivery  Products before

2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device 02inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device 1

2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device 2

Delivery & Package

2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device 3