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China Copper Heat Sink Substrate Flat Bottom Pin Type High Power Electronic Device Cu≥99.9% distributor
Copper Heat Sink Substrate Flat Bottom Pin Type High Power Electronic Device Cu≥99.9%

Indium Phosphide Wafer

(34)
China Copper Heat Sink Substrate Flat Bottom Pin Type High Power Electronic Device Cu≥99.9% factory

Copper Heat Sink Substrate Flat Bottom Pin Type High Power Electronic Device Cu≥99.9%
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Abstract of copper heat sink substrate Copper Heat Sink Substrate flat bottom pin type high power electronic device Cu≥99.9% Copper Heat Sink Substrate is a heat dissipating element made of high thermal ... Read More
2025-04-14 17:37:13
China InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um factory

InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um
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Product Description InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um Indium InAs or indium arsenide monolithic is a semiconductor composed of ... Read More
2024-12-05 11:57:01
China Germanium Substrate GE Flat Windows Optical Lenses Thermal Imaging Applications And Infrared Spectroscopy High Hardness factory

Germanium Substrate GE Flat Windows Optical Lenses Thermal Imaging Applications And Infrared Spectroscopy High Hardness
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Product Description Germanium substrate GE Flat Windows Optical Lenses Thermal Imaging Applications and Infrared Spectroscopy High hardness Germanium window (Ge) is a chemically inert material with a permissive ... Read More
2024-11-18 10:47:17
China Ge Germanium Wafer Semiconductor Substrates <111> Concentrating Photovoltaic CPV Custom Size Shapes factory

Ge Germanium Wafer Semiconductor Substrates <111> Concentrating Photovoltaic CPV Custom Size Shapes
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Product Description Ge germanium wafer semiconductor substrates concentrating photovoltaic CPV custom size shapes Germanium has good semiconductor properties. High-purity germanium is doped with trivalent ... Read More
2024-11-18 10:47:17
China Magnesium Oxide Purity 95% MgO Film Substrate 5x5 10x10 20x20 Thickness 0.5mm 1.0mm Orientation &lt;001&gt; &lt;110&gt; &lt;111&gt; factory

Magnesium Oxide Purity 95% MgO Film Substrate 5x5 10x10 20x20 Thickness 0.5mm 1.0mm Orientation <001> <110> <111>
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Magnesium oxide purity 95% MgO film substrate 5x5 10x10 20x20 thickness 0.5mm 1.0mm orientation Product Description: Thin film substrate magnesium oxide (MgO) single crystal is a high-quality substrate material ... Read More
2024-11-18 10:47:16
China InP Laser Epitaxial Wafer Indium Phosphide Wafer DFB/EML Expitaxial Wafer For Intelligent Sensing factory

InP Laser Epitaxial Wafer Indium Phosphide Wafer DFB/EML Expitaxial Wafer For Intelligent Sensing
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2inch Semi-Insulating Indium Phosphide InP Epitaxial Wafer for LD Laser Diode,semiconductor epitaxial wafer, 3inch InP wafer, single crystal wafer ​2inch 3inch 4inch InP substrates for LD application, ... Read More
2024-09-10 15:33:01
China InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um &lt;100&gt; Customized factory

InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um <100> Customized
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2inch Indium Arsenide Wafer InAs Epitaxial Wafer for LD Laser Diode, semiconductor epitaxial wafer, 3inch InAs-Zn wafer, InAs single crystal wafer ​2inch 3inch 4inch InAs-Zn substrates for LD application, ... Read More
2024-09-10 15:33:00
China DFB Wafer N-InP Substrate Epiwafer Active Layer InGaAlAs/InGaAsP 2 4 6 Inch For Gas Sensor factory

DFB Wafer N-InP Substrate Epiwafer Active Layer InGaAlAs/InGaAsP 2 4 6 Inch For Gas Sensor
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DFB wafer N-InP substrate epiwafer active layer InGaAlAs/InGaAsP 2 4 6 inch for gas sensor DFB wafer N-InP substrate epiwafer's brief A Distributed Feedback (DFB) wafer on an n-type Indium Phosphide (N-InP) ... Read More
2024-09-10 15:33:00
China DFB Epiwafer InP Substrate MOCVD Method 2 4 6 Inch Operating Wavelength 1.3 Μm, 1.55 Μm factory

DFB Epiwafer InP Substrate MOCVD Method 2 4 6 Inch Operating Wavelength 1.3 Μm, 1.55 Μm
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DFB Epiwafer InP substrate MOCVD method 2 4 6 inch Operating wavelength: 1.3 µm, 1.55 µm DFB Epiwafer InP substrate's Brief DFB (Distributed Feedback) Epiwafers on Indium Phosphide (InP) substrates are key ... Read More
2024-09-10 15:33:00
China FP Epiwafer InP Substrate Contact Layer InGaAsP Dia 2 3 4 Inch For OCT 1.3um Wavelength Band factory

FP Epiwafer InP Substrate Contact Layer InGaAsP Dia 2 3 4 Inch For OCT 1.3um Wavelength Band
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FP epiwafer InP substrate contact layer InGaAsP Dia 2 3 4 inch for OCT 1.3um wavelength band FP epiwafer InP substrate's Brief Fabry-Perot (FP) epiwafers on Indium Phosphide (InP) substrates are key components ... Read More
2024-09-10 15:33:00
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SiC Substrate

High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate

2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector

4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors

4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material

Sapphire Wafer

Semiconductor Wafer Custom Sapphire Glass / Sapphire Windows Special Orientation

sapphire wafer Thickness 0.43mm Sapphire Components Customized Size And Orientations

Square Sapphire Wafer / Sapphire Crystal Glass 10x10mm 5x5mm For Optical Lens

2°Off C - Axis Synthetic Sapphire Glass Epi - Ready Substrates 2 Inch Diameter 50.8mm

Gallium Nitride Wafer

Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness

2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led

2INCH 4INCH NPSS/FSS AlN template on sapphire EPI-wafer AlN-On-Sapphire wafer

2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates

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