DFB Wafer N-InP Substrate Epiwafer Active Layer InGaAlAs/InGaAsP 2 4 6 Inch For Gas Sensor

DFB wafer N-InP substrate epiwafer active layer InGaAlAs/InGaAsP 2 4 6 inch for gas sensor

DFB wafer N-InP substrate epiwafer's brief

A Distributed Feedback (DFB) wafer on an n-type Indium Phosphide (N-InP) substrate is a critical material used in the production of high-performance DFB laser diodes. These lasers are essential for applications requiring single-mode, narrow-linewidth light emission, such as in optical communication, data transmission, and sensing. DFB lasers typically operate in the 1.3 µm and 1.55 µm wavelength ranges, which are optimal for fiber-optic communication due to the low-loss transmission in optical fibers.

The n-type InP substrate provides excellent lattice matching for epitaxial layers, such as InGaAsP, which are used to form the active region, cladding layers, and the DFB laser's integrated grating structure. This grating allows for precise feedback and wavelength control, making it ideal for long-distance communication and Wavelength Division Multiplexing (WDM) systems.

Key applications of DFB epiwafers on N-InP substrates include high-speed optical transceivers, data center interconnects, environmental gas sensing, and medical imaging through Optical Coherence Tomography (OCT). The wafer's performance characteristics, such as high-speed modulation, wavelength stability, and narrow spectral linewidth, make it indispensable for modern communication and sensing technologies.

DFB wafer N-InP substrate epiwafer's properties 

Substrate Material: N-Type Indium Phosphide (N-InP)

• Lattice Matching: The N-InP substrate provides excellent lattice matching with epitaxial layers, such as InGaAsP or InAlGaAs, reducing defects and strain, which is critical for reliable, high-performance laser operation.
• High Electron Mobility: InP has high electron mobility, enabling efficient carrier transport, which is essential for high-speed DFB lasers.
• Direct Bandgap: InP has a direct bandgap of 1.344 eV, allowing for efficient light emission in the infrared spectrum, specifically in the 1.3 µm and 1.55 µm wavelength ranges.

Active Region and Epitaxial Layers

• InGaAsP/InAlGaAs Active Layer: The active region, typically made of InGaAsP, is where electron-hole recombination occurs, generating photons. This region is carefully designed to emit light in specific wavelength ranges (1.3 µm or 1.55 µm) for optical communication.
• Cladding Layers: Surround the active region, providing optical confinement, ensuring that light remains within the active region for efficient lasing.
• Grating Layer: The DFB structure includes a built-in grating that provides feedback for single-mode operation and precise wavelength control.

Operating Wavelength

• 1.3 µm and 1.55 µm: These wavelengths are ideal for fiber-optic communication due to minimal transmission losses in optical fibers, making the epiwafer crucial for telecom applications.

• Single-Mode and Narrow Linewidth

  • DFB lasers are designed for single-mode operation, producing light with a very narrow spectral linewidth, which is critical for high-speed data transmission and reducing noise in optical communication systems.

Wavelength Stability

• Integrated Grating: The grating in the DFB structure ensures stable wavelength output, making the laser highly reliable for long-distance communication and WDM systems.
• Temperature Stability: DFB epiwafers on N-InP substrates offer excellent temperature stability, ensuring consistent performance across a wide temperature range.

Low Threshold Current

• The optimized structure of the DFB laser on an N-InP substrate leads to low threshold currents, meaning less power is required to initiate lasing, making these wafers highly energy-efficient.

High-Speed Modulation Capability

• Due to the high electron mobility and efficient carrier injection in InP, DFB lasers on N-InP substrates are capable of high-speed modulation, making them ideal for use in high-speed optical transceivers and data center interconnects.

DFB wafer N-InP substrate epiwafer's PL mapping test(ZMSH DFB inp epiwafer.pdf)

DFB wafer N-InP substrate epiwafer's XRD & ECV test result

DFB wafer N-InP substrate epiwafer's application

DFB (Distributed Feedback) wafers on n-type Indium Phosphide (N-InP) substrates are crucial in various high-performance optoelectronic applications, especially where single-mode, narrow-linewidth light emission is required. Below are the primary applications:

Optical Communication

• Long-Distance Fiber Optic Networks: DFB lasers on N-InP substrates are widely used in long-distance optical communication systems. Their single-mode output at wavelengths like 1.3 µm and 1.55 µm is optimal for minimizing signal loss in optical fibers, making them ideal for high-speed data transmission.
• WDM (Wavelength Division Multiplexing) Systems: In dense WDM systems, DFB lasers are used to generate precise wavelengths for different channels. Their narrow linewidth and wavelength stability are essential for maximizing the number of channels in the optical spectrum.

Data Center Interconnects

• High-Speed Data Transmission: DFB lasers are employed in optical transceivers used for short- to medium-distance high-speed data transmission within data centers. Their high-frequency modulation capability and low power consumption are critical for energy-efficient operations.

Environmental Gas Sensing

• Gas Detection: DFB lasers are used in environmental gas sensors to detect specific gases, such as CO2 and CH4. By tuning the laser to the absorption wavelength of these gases, highly sensitive measurements can be made for industrial and environmental monitoring applications.
• Laser Absorption Spectroscopy: DFB lasers provide narrow linewidth and stable output, making them ideal for precise gas sensing and spectroscopy applications.

Medical Diagnostics (Optical Coherence Tomography - OCT)

• Ophthalmology and Dermatology: DFB lasers are used in Optical Coherence Tomography (OCT) systems, which are widely used for high-resolution imaging of biological tissues. The narrow spectral linewidth and stable wavelength output help generate clear and detailed images, essential for non-invasive diagnostics in ophthalmology and dermatology.

LIDAR (Light Detection and Ranging) Systems

• Autonomous Vehicles and 3D Mapping: DFB lasers are used in LIDAR systems for measuring distances and mapping environments. Their narrow linewidth and stable performance allow for accurate distance measurements and object detection in autonomous driving, drones, and 3D mapping systems.

Satellite and Space Communication

• High-Frequency Communication: DFB lasers are employed in satellite communication systems to transmit high-frequency, long-distance data signals. Their wavelength stability and low power consumption are vital for reliable space communication, where temperature and environmental conditions can vary.

Photonic Integrated Circuits (PICs)

• Integrated Optoelectronics: DFB epiwafers are used in photonic integrated circuits (PICs), which combine multiple optical components, such as lasers, modulators, and detectors, on a single chip. These circuits are essential for applications in high-speed data communication and signal processing.

Military and Aerospace

• Secure Communication and Targeting: DFB lasers are used in military applications for secure, high-frequency communication. Their narrow linewidth and wavelength stability are crucial for minimizing signal interference in complex communication environments.
• Precision Targeting: In aerospace and defense, DFB lasers are employed in targeting and guidance systems that require precise wavelength control and stability.

Precision Spectroscopy

• Scientific Research: DFB lasers are used in precision spectroscopy for detailed analysis of materials and chemical compositions. Their narrow linewidth and tunable wavelength make them ideal for accurate measurements in scientific research and industrial applications.

DFB wafer N-InP substrate epiwafer's real photos

Key words:DFB wafe,r N-InP substrate epiwafer,active layer InGaAlAs/InGaAsP