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Home > Products > Gallium Nitride Wafer > 2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led

2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led

Product Details

Place of Origin: CHINA

Brand Name: zmkj

Model Number: GaN-templates

Payment & Shipping Terms

Minimum Order Quantity: 5pc

Price: by case

Packaging Details: single wafer case in 100-grade cleaning room

Delivery Time: 2-4weeks

Payment Terms: L/C, T/T

Get Best Price
Highlight:

gan substrate

,

gan template

Material:
GaN Epi On Sapphire Carrier
Method:
HVPE
Size:
2inch
Thickness:
430um
Industry:
LD,led,laser Device,detector,
Surface:
Single Side Polished
Material:
GaN Epi On Sapphire Carrier
Method:
HVPE
Size:
2inch
Thickness:
430um
Industry:
LD,led,laser Device,detector,
Surface:
Single Side Polished
2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led

2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,

GaN  Specifications/Special Features:

  1. Gallium nitride (GaN) is a very hard made material that has a wurtzite crystal structure and probably is the most important semiconductor material as the third generation semi material.
  2.  It can be used to emit brilliant light in the form of light emitting diodes (LEDs) and laser diodes, as well as being the key material for next generation high frequency, high power transistors capable of operating at high temperatures.
  3. GaN based epitaxial wafer (Sapphire,SiC) Epitaxial wafers are grown by MBE or MOCVD method , one layer or multi-layer structures on Sapphire substrates , diameter up to 4 inch.

III-Nitride(GaN,AlN,InN)Forbidden band width (light emitting and absorption) cover the ultraviolet,

visible light and infrared.GaN can be used in many areas such as LED display, High-energy Detection

and Imaging,Laser Projection Display, Power Device, etc.

 2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led 0
 
Specifications:
 

2” GaN Templates

 

 Item

 

GaN-T-N  

GaN-T-S

Dimensions

Ф 2”

 Thickness

15 μm, 20 μm, 30 μm, 40 μm

30 μm, 90 μm

 Orientation

C-axis(0001) ± 1°

Conduction Type

N-type

Semi-Insulating

 Resistivity(300K)

< 0.05 Ω·cm

>106 Ω·cm

 Dislocation Density

Less than 1x108 cm-2

Substrate structure

 
Thick GaN on 430um or 330um Sapphire(0001)

 

 Useable Surface Area

> 90%

Polishing

Standard: SSP Option: DSP

 Package

Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led 12inch 4inch free-standing GaN Gallium Nitride Substrates Template for led 2


2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led 3
-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF by FOB.
Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
Q: How to pay?
100%T/T In advance, Paypal, West Union, MoneyGram,