2inch AlN template on sapphire or sic substrates, HVPE Gallium Nitride wafer,AlN substrates on GaN
2INCH AlN template on sapphire EPI-wafer AlN-On-Sapphire wafer
Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.
AlN template is used for development of HEMT structures, resonant tunneling diodes and
acoustoelectronic devices
Specifications:
| 2” AlN Templates | ||
| Item | AlN-T | |
| Dimensions | Ф 2” | |
| Substrate | Sapphire, SiC, GaN | |
| Thickness | 1000nm+/- 10% | |
| Orientation | C-axis(0001) ± 1° | |
| Conduction Type | Semi-Insulating | |
| Dislocation Density | XRD FWHM of (0002) < 200 arcsec. | |
| XRD FWHM of (10-12) < 1000 arcsec | ||
| Useable Surface Area | > 80% | |
| Polishing | Standard: SSP | |
| Option: DSP | ||
| Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. | |
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