SHANGHAI FAMOUS TRADE CO.,LTD 86-1580-1942596 eric_wang@zmsh-materials.com
2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates

2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates

  • High Light

    gan substrate

    ,

    gan template

  • Material
    AlN On Wafer
  • Method
    HVPE
  • Size
    4inch
  • Thickness
    430+15um Or 650um
  • Industry
    LD,led,laser Device,detector,
  • Surface
    Double Or Single Side Polished
  • Place of Origin
    CHINA
  • Brand Name
    zmkj
  • Model Number
    4inch AlN
  • Minimum Order Quantity
    2pc
  • Price
    by case
  • Packaging Details
    single wafer case in 100-grade cleaning room
  • Delivery Time
    2-4weeks
  • Payment Terms
    L/C, T/T

2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates

2inch ,4inch Gallium Nitride AlN template wafer on sapphire or sic substrates,HVPE Gallium Nitride wafer,AlN templates 

  1. III-Nitride(GaN,AlN,InN)

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.

Product  Aluminum nitride (AlN) film
Product Description: AllN Epitxial proposed model saphhire hydride vapor phase epitaxy (HVPE) method. Aluminum nitride film is also cost-effective way to replace the aluminum nitride single crystal substrate. Branch Crystal sincerely welcome your inquiry!
Technical parameters:
Size 50mm ± 2mm
Sapphire substrate orientation c-axis (0001) ± 1.0deg
Macro defect density <5cm-2
Available surface area 90%
Surface treatment before As Grown Epi-ready
Container Single Chip

 

Specifications:

10x10x0.5mm, 10x10x1mm, dia2 "x1mm;

Can be customized according to customer demand special orientation and size.

Standard Packaging: 1000 clean room, 100 clean bag or single box packaging
 

 2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates 0
 
GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.
2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates 1
 
 
Specifications:

  4” AlN Templates 2-4inch  size also ok
Item AlN-T
Dimensions Ф 100±0.3mm
Substrate Sapphire, SiC, GaN
Thickness 1000nm+/- 10% (AlN thickness)
Orientation C-axis(0001) ± 1°
Conduction Type Semi-Insulating
Dislocation Density XRD FWHM of (0002) < 200 arcsec.
XRD FWHM of (10-12) < 1000 arcsec
Useable Surface Area > 80%
Polishing Standard: SSP
Option: DSP
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. or single cassettes.

Other size aslike 5x5mm,10x10mm,2inch ,3inch also can be customized. 

 

About Our Team

    ZMKJ locates in the city of Shanghai, Which is the best city of China,

and our factory is founded in Wuxi city in 2014, but in the semiconductor material,

have the good  experience for  almost 10years.
   We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
     It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.


2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates 2