2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector

Place of Origin china
Brand Name zmsh
Model Number 2inch-6h
Minimum Order Quantity 2pcs
Price 200usd/pcs by FOB
Packaging Details in cassettes of single wafer containers
Delivery Time within 15days
Supply Ability 1000pcs
Product Details
Material Sic Single Crystal Industry Semiconductor Wafer,
Applications Device,epi-ready Wafer, 5G,power Electronics,detector, Color Green,blue,white
Customized Ok Type 6H-N
High Light

sic wafer


sic substrate

Leave a Message
Product Description

2inch 6H-Semi sic wafer ,customized sic substrates , 2inch 6H-N sic wafers , sic crystal ingots ,Silicon Carbide Wafer


About Silicon Carbide SiC crystal
  1.    Advantagement
  2. • Low lattice mismatch
  3. • High thermal conductivity
  4. • Low power consumption
  5. • Excellent transient characteristics
  6. • High band gap


Application areas

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  •     diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED 



Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s


Standard spec.


2inch diameter Silicon Carbide (SiC) Substrate Specification  
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade  
Diameter 50.8 mm±0.2mm  
Thickness 330 μm±25μm or 430±25um  
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI  
Micropipe Density ≤0 cm-2 ≤5 cm-2 ≤15 cm-2 ≤100 cm-2  
Resistivity 4H-N 0.015~0.028 Ω•cm  
6H-N 0.02~0.1 Ω•cm  
4/6H-SI ≥1E5 Ω·cm  
Primary Flat {10-10}±5.0°  
Primary Flat Length 18.5 mm±2.0 mm  
Secondary Flat Length 10.0mm±2.0 mm  
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°  
Edge exclusion 1 mm  
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm  
Roughness Polish Ra≤1 nm  
CMP Ra≤0.5 nm  
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm  
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%  
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%  
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length  
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each  



2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector 02 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector 1

ZMKJ can  provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .



Packing and Delivery


>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.