4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material

Place of Origin china
Brand Name zmsh
Model Number sic-6inch 4h-n
Minimum Order Quantity 1pcs
Price by case
Packaging Details by customized case
Delivery Time 15days within
Product Details
Industry Semiconductor Substrate Materials Sic Crystal
Application 5G, Device Material, MOCVD,power Electronics Type 4H-N,semi ,No Doped
Color Green,blue, White Hardeness 9.0 Up
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Product Description
6inch sic substrates, sic ingot ,sic crystal ingots ,sic crystal block, sic semiconductor substrates,6inch Silicon Carbide Wafer,4H-semi SiC wafer,6inch 4H-N type dummy grade sic wafer for test,
1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s
2. Material Size describtion
6 inch diameter Silicon Carbide (SiC) Substrate Specification
Grade Z grade P grade R grade D grade
ZERO MPD Production Research Grade Dummy Grade
 Diameter 150mm±0.5 mm
Thickness 350 μm±25μm or 500±25um or by customized size
 Wafer Orientation Off axis : 4.0° toward <1120 > ±0.5° for 4H-N
 Micropipe Density ≤1cm-2 ≤5 cm-2 ≤15 cm-2 ≤50 cm-2
Resistivity 4H-N 0.015~0.028 Ω·cm
4/6H-SI >1E5 Ω·cm
 Primary Flat {10-10}±5.0°
 Primary Flat Length 47.5mm±2.5 mm
 Edge exclusion 3mm
 TTV/Bow /Warp ≤15μm /≤40μm /≤60μm
 Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
  None None 1 allowed, ≤1 mm
Cracks by high intensity light
Hex Plates by high intensity light Cumulative area≤1 % Cumulative area≤1 % Cumulative area≤3 %
  None Cumulative area≤2 % Cumulative area≤5%
Polytype Areas by high intensity light
  3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 8 scratches to 1×wafer diameter cumulative length
Scratches by high intensity light
Edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each
 Contamination by high intensity light None
3. products
4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material 04H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material 1



Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and

Freight is in accordance with the actual settlement.


Q: How to pay?

A: T/T 100% deposit before delivery.


Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

(2) For customized commen products, the MOQ is 10pcs up.


Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.


Q: Do you have standard products?

A: Our standard products in stock. as like substrates 4inch 0.35mm.