2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

3C-N type silicon carbide (3C-SiC) substrate is a wide-bandgap semiconductor material based on the cubic crystal structure (3C), fabricated via ​​liquid phase epitaxy (LPE)​​ or ​​physical vapor transport (PVT)​​. It supports standard sizes from 2-inch to 8-inch, as well as custom dimensions (e.g., 5×5 mm, 10×10 mm). Its core advantages include ​​high electron mobility (1,100 cm²/V·s)​​, ​​wide bandgap (3.2 eV)​​, and ​​high thermal conductivity (49 W/m·K)​​, making it ideal for high-frequency, high-temperature, and high-power device applications.

1. Electrical Performance​​

• ​​High Electron Mobility​​: Significantly superior to 4H-SiC (900 cm²/V·s), 3C-SiC substrates reducing conduction losses in devices.
• ​​Low Resistivity​​: ≤0.0006 Ω·cm (N-type), 3C-SiC substrates optimized for low-loss high-frequency circuits.
• ​​Wide Bandgap​​: Withstands voltages up to 10 kV, 3C-SiC substrates suitable for high-voltage scenarios (e.g., smart grids, EVs).

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2. Thermal & Chemical Stability​​

• ​​High Thermal Conductivity​​: 3× higher heat dissipation efficiency than silicon, 3C-SiC substrates operating stably from -200°C to 1,600°C.
• ​​Radiation Resistance​​: 3C-SiC substrates ideal for aerospace and nuclear applications.

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3. Process Compatibility​​

• ​​Surface Flatness​​: λ/10 @632.8 nm, compatible with lithography and dry etching.
• ​​Low Defect Density​​: Micro-tube density <0.1 cm⁻², enhancing device yield.

​​Core Applications​​ of 3C-SiC Substrates

1. 5G Communications & RF Devices​​

• ​​Millimeter-Wave RF Modules​​: 3C-SiC substrates enables GaN-on-3C-SiC RF devices for 28 GHz+ bands, improving signal efficiency.
• ​​Low-Loss Filters​​: 3C-SiC substrates reduces signal attenuation, boosting radar and communication sensitivity.

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2. Electric Vehicles (EVs)​​

• ​​On-Board Chargers (OBC)​​: 3C-SiC substrates reduces energy loss by 40%, compatible with 800V fast-charging platforms.
• ​​Inverters​​: 3C-SiC substrates cuts 80–90% energy loss, extending driving range.

3. ​​Industrial & Energy Systems​​

• ​​Solar Inverters​​: Improves conversion efficiency by 1–3%, reducing volume by 40–60% for high-temperature environments.
• ​​Smart Grids​​: Minimizes heat dissipation needs, supporting high-voltage DC transmission.

4. ​​Aerospace & Defense​​

• ​​Radiation-Hardened Devices​​: Replaces silicon components, extending satellite and rocket system lifespans.
• ​​High-Power Radars​​: 3C-SiC substrates leverages low-loss properties for enhanced detection precision.

1. 5*5mm/10*10mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

2. ​​4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade

3C-SiC Substrates​​ FAQ