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Al₂O₃ Sapphire Wafer, Off C-Axis Toward M-Plane 8°, Diameters: 2"– 8", Custom Thickness

12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic

Sapphire Custom-Shaped Sapphire View Windows Optical Glass high hardness

Polished Sapphire Tube Single Crystal Al₂O₃ Optical Component

Customizable 40mm/42mm Round Sapphire Watch Case In Magenta

6'' 8'' Ultra Thick SiO2 Single Crystal 10um 20um 25um Dry Wet Oxide Layer 0.1μM 25μM

Si3Nx Coating Wafer With Resistivity 1 - 10ohm No Defects

3C-SiC Substrate N type Product Grade For 5G Communications

2 Inch Quartz Glass Wafer DSP SSP Diameter 50.8mm

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Ti Titanium Doped Synthetic Ruby Ball Sapphire Ingot 9.0 High Hardness

Customized Size Square Sic Chip Low Lattice Mismatch With High Thermal

C - Axis 6 Inch Sapphire Wafer Al2O3 Crystal Optical Lens For LED Epi - Ready

A - Axis 4 Inch Sapphire Optical Windows 85% Vision Light Transmissivity

2Inch 3inch 4inch r-Axis m-plane a-axis Sapphire Wafer substrate

2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test

Colorless Transparent Sapphire Optical Windows , Sapphire Glass Lens For Phone

Customized Size Raw Sapphire Wafer , Sapphire Lens For Phone Cover Glass

Protective Cover Glass Sapphire Optical Windows Wear Corrosion Resistance

Double Side Polished Sapphire Windows For Fingerprint Recognition Applications

Watch Protective Screen Custom Sapphire Glass A - Axis Round Sapphire Rough Lens

4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics

LED Eli - Ready Wafer Sapphire Ball , Sapphire Glass Lens With Custom Size

Multi - Pass Amplifiers Ruby Laser Rod / Laser Ruby Rod For LED Eli - Ready Wafer

Al2O3 Single Crystal Material Ruby Ball Lens For Wear Resisting Bearing

3.58 Density Mgo Substrate / Mgo Wafer Magnesium Oxide Crystal Substrate

C - Axis Sapphire Wafer Single Side Polished 3 Inch Al2O3 Crystal Optical Lens

Dia 103mm C - Axis Sapphire Optical Windows Single Side Polished Customized Size

N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch

4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys

COMPANY INTRODUCTION

SHANGHAI FAMOUS TRADE CO.,LTD

SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services ...

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Company News

2025/09/12

NVIDIA Processors Switch to Thermal Interface Material! SiC Substrate Demand Set to Explode!

NVIDIA Processors Switch to Thermal Interface Material! SiC Substrate Demand Set to Explode! The thermal bottleneck of future AI chips is being overcome by silicon carbide (SiC) substrate materials. According to overseas media reports, NVIDIA plans to replace the intermediate substrate material in the CoWoS advanced packaging process of its next-generation processors with silicon carbide. TSMC has invited major manufacturers to jointly develop manufacturing technologies for SiC intermediate substrates. This shift addresses the physical limitations of current AI chip performance improvements. As GPU power increases, integrating multiple chips into silicon interposers generates extreme thermal demands, pushing traditional silicon materials beyond their heat dissipation capabilities. Silicon carbide, a wide-bandgap semiconductor, offers unique advantages in extreme high-power and high-heat-flux environments. Its core benefits in GPU packaging include: 1.Enhanced thermal management: Replacing silicon interposers with SiC reduces thermal resistance by nearly 70%. 2.Optimized power architecture: SiC enables smaller, more efficient voltage regulator modules (VRMs), shortening power delivery paths and minimizing resistive losses for faster, stable current responses in AI workloads. This transformation directly addresses GPU power escalation challenges, providing a high-efficiency solution for next-gen processors. Key Advantages of Silicon Carbide •2–3× higher thermal conductivity than silicon, resolving heat dissipation issues in high-power chips. •20–30°C lower junction temperatures for improved stability in high-performance scenarios. Implementation Roadmap & Challenges NVIDIA plans a phased approach: •2025–2026: First-gen Rubin GPUs will retain silicon interposers while TSMC collaborates with suppliers to develop SiC manufacturing technologies. •2027: Full-scale adoption of SiC interposers in advanced packaging. Key hurdles include: •Material hardness: Silicon carbide’s diamond-like hardness demands ultra-precision cutting. Non-uniform surfaces from suboptimal cutting render substrates unusable. Japanese firm DISCO is developing next-gen laser cutting systems to address this. Market Outlook •Early adoption: SiC interposers will first appear in flagship AI chips. TSMC’s 7x-mask CoWoS design (launching 2027) will expand interposer area to 14,400 mm², driving substrate demand. •Capacity expansion: Morgan Stanley forecasts CoWoS monthly capacity to surge from 38,000 12-inch wafers in 2024 to 83,000 in 2025 and 112,000 in 2026, directly boosting SiC interposer demand. •Cost trends: Despite current high prices, 12-inch SiC substrates are expected to decline to viable levels as production scales. Impact on Downstream Applications •Integration density: 12-inch SiC substrates offer 90% larger area than 8-inch versions, enabling more Chiplet modules per interposer. •Supply chain synergy: TSMC and DISCO are advancing manufacturing R&D, with commercial production slated for 2027. Market Reaction On September 5, SiC-related stocks surged 5.76%, led by Tianyue Advanced, Luxi Technology, and Tianshun Shares. Key drivers include: •NVIDIA’s Rubin processor roadmap. •SiC’s superior properties: high power density, low losses, and thermal stability. Industry Projections •Market size: Global conductive/mid-insulating SiC substrate markets reached 512M/242M in 2022, projected to hit 1.62B/433M by 2026 (CAGRs: 33.37%/15.66%). •Applications: Automotive will dominate, accounting for 74% of SiC power devices by 2028. Supply Chain Dynamics •Leadership: Tianyue Advanced (global #2 in conductive SiC), Sanan, and Luxi Technology lead production. •Equipment: Domestic firms like NAURA and Jingce hold >60% market share in SiC crystal growth equipment. Risks & Opportunities •Technical hurdles: Defect density control and 12-inch wafer uniformity remain critical challenges. •Cost competitiveness: Scaling production and improving yield are essential for mass adoption. Conclusion NVIDIA’s shift to SiC interposers marks a pivotal moment for advanced packaging. While technical and cost barriers persist, the synergy between AI-driven demand and material innovation positions SiC as the cornerstone of next-gen semiconductor infrastructure. ZMSH specializes in 2-12-inch conductive/semi-insulating silicon carbide (SiC) substrate customization and supply, offering tailored solutions for crystal orientation (/), resistivity (10⁻³–10¹⁰ Ω·cm), and thickness (350–2000 μm) to meet power electronics, RF devices, and optoelectronic applications. We provide advanced precision machining for complex-shaped SiC components, achieving ±0.01 mm tolerances in cutting, grinding, and polishing processes. Our end-to-end technical collaboration spans wafer slicing, surface finishing, and packaging optimization, ensuring compatibility with high-temperature bonding and advanced encapsulation requirements.

2025/09/11

Title: Breakthrough in 12-Inch Silicon Carbide Wafer Laser Liftoff Technology – Beijing Jinfei Semiconductor Technology Co., Ltd.

Title: Breakthrough in 12-Inch Silicon Carbide Wafer Laser Liftoff Technology – Beijing Jinfei Semiconductor Technology Co., Ltd. Recently, Beijing Jinfei Semiconductor Technology Co., Ltd., a leading domestic semiconductor equipment manufacturer, achieved a significant breakthrough in silicon carbide (SiC) wafer processing technology. The company successfully implemented its independently developed laser liftoff equipment to produce 12-inch silicon carbide wafers. This milestone marks China’s critical advancement in third-generation semiconductor manufacturing equipment and provides a novel solution for global cost reduction and efficiency enhancement in the SiC industry. The technology has already passed client validation for 6-inch and 8-inch SiC applications, demonstrating performance aligned with international standards. Key Implications of This Technological Breakthrough for the SiC Industry: 1.Significantly reducing production costs: Compared to mainstream 6-inch wafers, 12-inch SiC wafers expand usable wafer area by ~4x, reducing unit chip costs by 30%–40%. 2.Enhancing industrial supply capacity: Resolving technical bottlenecks in large-dimension SiC wafer processing, this innovation supports global capacity expansion for SiC production. 3.Accelerating domestic substitution: Breaking foreign monopolies in large-size SiC processing equipment, this achievement strengthens China’s self-sufficiency in semiconductor manufacturing infrastructure. 4.Expanding downstream applications: Cost reductions will expedite SiC device adoption in electric vehicles, renewable energy, and other high-growth sectors. Beijing Jinfei Semiconductor Technology Co., Ltd., a spin-off enterprise from the Institute of Semiconductors, Chinese Academy of Sciences, specializes in R&D, production, and sales of semiconductor-specific equipment. Focused on laser application technology, the company has developed proprietary semiconductor processing systems serving major domestic semiconductor manufacturers. CEO Statement: “Adhering to technological innovation as our core driver, this breakthrough in 12-inch SiC laser liftoff technology reflects our technical expertise and the robust support from Beijing Municipal Science & Technology Commission, the Institute of Semiconductors (CAS), and the ‘Disruptive Technology Innovation’ key special project led by the Jing-Jin-Tang National Innovation Center. Moving forward, we will intensify R&D investments to deliver higher-performance semiconductor equipment solutions for our clients.” Conclusion ZMSH, with end-to-end self-controllability at its core, delivers one-stop solutions spanning customized equipment design, process optimization, and mass production. Leveraging breakthroughs in laser liftoff technology, we have achieved high-efficiency mass production of domestically produced 12-inch silicon carbide (SiC) wafers, enabling clients to rapidly establish low-cost, high-performance supply chains. Through nationally produced equipment and a localized service network, we guarantee 48-hour response times to client demands and foster ecological synergy across the value chain—from substrates to devices—to accelerate the scalable adoption of SiC technology in electric vehicles, renewable energy, and other critical sectors.

2025/09/11

What is FOUP in Chip Manufacturing?

What is FOUP in Chip Manufacturing? In semiconductor manufacturing, a Front Opening Unified Pod (FOUP) is a critical container used to protect, transport, and store wafers. Designed to hold 25 pieces of 300mm wafers, its primary components include a front-opening chamber and a dedicated door frame. As the core carrier in automated transport systems for 12-inch wafer fabs, FOUPs remain closed during transit and only open when positioned at a tool’s loading port for wafer transfer. FOUPs are engineered to meet stringent microenvironment requirements. Their rear features wafer slots compatible with robotic arms, while the door aligns precisely with gripper mechanisms. Wafer handling robots operate in Class 1 cleanrooms (≤10 particles ≥0.1 μm/m³), ensuring contamination-free transport. Modern fabs utilize ceiling-mounted rail systems for FOUP movement, though older facilities may employ ground-based automated guided vehicles (AGVs). Beyond transport, FOUPs serve as storage solutions. Due to lengthy manufacturing cycles (spanning months) and high monthly output, tens of thousands of wafers may be in transit or temporary storage at any time. FOUPs undergo periodic nitrogen purging to prevent pollutant exposure, maintaining ultra-high cleanliness during storage. Core Functions & Importance FOUPs protect wafers from mechanical shock and contamination during transit, directly impacting yield. Advanced FOUPs employ gas purging and Localized Atmosphere Control (LAC) to mitigate humidity and volatile organic compounds (VOCs). Their sealed systems restrict external elements—oxygen, moisture, and contaminants—to levels

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Sapphire Wafer

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IC Silicon Wafer

Synthetic Sapphire Rod

Fused Quartz Plate

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LiNbO3 Wafer

GaAs Wafer

Indium Phosphide Wafer

Ceramic Substrate

Lab Wrapper

Al₂O₃ Sapphire Wafer, Off C-Axis Toward M-Plane 8°, Diameters: 2"– 8", Custom Thickness

12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic

Sapphire Custom-Shaped Sapphire View Windows Optical Glass high hardness

Polished Sapphire Tube Single Crystal Al₂O₃ Optical Component

Customizable 40mm/42mm Round Sapphire Watch Case In Magenta

6'' 8'' Ultra Thick SiO2 Single Crystal 10um 20um 25um Dry Wet Oxide Layer 0.1μM 25μM

Si3Nx Coating Wafer With Resistivity 1 - 10ohm No Defects

3C-SiC Substrate N type Product Grade For 5G Communications

2 Inch Quartz Glass Wafer DSP SSP Diameter 50.8mm

SHANGHAI FAMOUS TRADE CO.,LTD

SiC Substrate

High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate

2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector

4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors

Sapphire Wafer

Semiconductor Wafer Custom Sapphire Glass / Sapphire Windows Special Orientation

sapphire wafer Thickness 0.43mm Sapphire Components Customized Size And Orientations

Square Sapphire Wafer / Sapphire Crystal Glass 10x10mm 5x5mm For Optical Lens

Gallium Nitride Wafer

Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness

2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led

2INCH 4INCH NPSS/FSS AlN template on sapphire EPI-wafer AlN-On-Sapphire wafer