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2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test

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2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test

China 2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test supplier
2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test supplier 2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test supplier 2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test supplier

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Product Details:

Place of Origin: china
Brand Name: zmsh
Model Number: A-plane 2INCH

Payment & Shipping Terms:

Minimum Order Quantity: 25pcs
Price: by case
Packaging Details: Vacuum-sealed containers with nitrogen backfill in a class 100 environment
Delivery Time: 15-20days
Supply Ability: 1000pcs/months
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Detailed Product Description
Material: 99.999% Al2O3 Industry: Led,optical Glass,epi-ready Wafer
Application: Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics Color: White Or Red Or Blue
Vision Light Transmissivity: 85% Advantagement: High Hardness9.0,wear Resistance,
Type: 2inch A-axis Thickness: 0.43mm

A-axis sapphire wafer for epi-ready test,sapphire optical chips, 2inch A-axis sapphire epi-ready,2inch sapphire substrates for led
 

Sapphire Indtroduce

Product Name: Aluminum oxide (Al2O3) crystal substrate Sapphire crystal 
Product Description: Al2O3 single crystal (Sapphire, also known as white stones, sapphire) has good thermal properties, excellent electrical characteristics and dielectric properties, and anti-chemicalcorrosion, it is high temperature, thermal conductivity, high hardness, infrared transparent, chemically stable good. Widely used in high-temperature infrared window materials and III-V nitride epitaxial film substrate and a variety of materials to meet the growing blue, purple, white light-emitting diode (LED) and blue laser (LD) needs, Branch Crystal company specializing in the production of high quality polished sapphire crystal and epitaxial substrates will provide you with a lot of high quality and low price monocrystalline substrate.
Technical parameters:
 
Crystal structure Hexagonal a = 4.758 Å c = 12.992 Å
Crystal orientation

(11-20) - a plane: 2.379 Å          (1-102) - r plane: 1.740 Å

(10-10) - m plane: 1.375 Å          (0001) - c plane: 2.165 Å
Crystal purity > 99.999%
Mp 2040 o C
Density 3.98 g / cm 3
Hardness 9 (mohs)
Thermal expansion 7.5 (x10 -6 / o C)
Heat capacity 0.10 (cal / o C)
Thermal conductivity 46.06 @ 0 o C 25.12 @ 100 o C, 12.56 @ 400 o C (W / (mK))
Permittivity ~ 9.4 @ 300K at A axis ~ 11.58 @ 300K at C axis
Loss tangent <2x10 -5 at A axis, <5 x10 -5 at C axis
Specifications:

C, A, M, R Tolerance: + / -0.2 degrees

dia2"~dia dia15" x 250mm

Single throw or double throw, Ra <5A

Note: according to customers' requirements and size of the corresponding direction.

Standard Packaging: 1000 clean room, 100 clean bag or single box packaging
2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test
specification description 
Material: Single crystal Al2O3 99.999%

2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test

Orientation: A-axis 0.2°

Diameter:50.8.±0.2mm

Thickness :430±15um or 330±15um

Primary flat:16±1mm

OF Orientation flat: OFF C axis±0.1° C-plane(0001)

 

Frontside Surface Roughness:Ra<0.2nm

Backside Surface Roughness: 0.8~1.2um

( Or double side polished,  both side Ra<0.2nm)

 

TTV:<10um

BOW:-10~0um 

WARP:<10um

 

Laser Mark Series No. by needs

Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment

Cleanliness :Free visible contamination

If needing, 3-6inch A-axis wafers also can be provided.

Sapphire Application 

Application
- For LED substrate application

Hostile environment
Optical transmission from ultraviolet to near infrared
High temperature and ultra low temperatures 
Radiation resistance
Sapphire wafer and substrate applications include:
- Microelectronic IC applications - SOS Silicon-on-Sapphire
- Growth of superconducting compounds / Gallium Nitride - Infrared detectors
- Hybrid microelectronics - Polishing carriers

QC flow of sapphire wafer produce

 

2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test

2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test

 

FAQ:

1. Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

omized products: the delivery is 2 -4 weeks after you order contact.

 

2. Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex,  EMS etc by FOB.

 

3. Q: How to pay?

A: T/T, Paypal, Secure payment and Assurance payment.

 

4. Q: What's your MOQ?

A: (1) For inventory, the MOQ is 25pcs. if 50pcs it's better.

(2) For customized products, the MOQ is 25pcs up.

 

5. Q: Do you have standard products?

A: Our standard products in stock.  as like 2inch 0.43mm 1sp or  2sp thickness each orientation in stock.


>>Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product , we will take a different packaging process!

2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

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