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2 - 6 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.1 - 2mm Thickness

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2 - 6 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.1 - 2mm Thickness

China 2 - 6 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.1 - 2mm Thickness supplier
2 - 6 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.1 - 2mm Thickness supplier 2 - 6 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.1 - 2mm Thickness supplier

Large Image :  2 - 6 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.1 - 2mm Thickness

Product Details:

Place of Origin: CHINA
Brand Name: zmkj
Model Number: GaP wafer

Payment & Shipping Terms:

Minimum Order Quantity: 5pcs
Price: by case
Packaging Details: single wafer case
Delivery Time: 1-4weeks
Supply Ability: 1000pcs/month
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Detailed Product Description
Materials: GaP Single Crystal Industry: Semiconductor Substrates,device,optical
Color: Yellow Diameter: 0.5~76.5mm
Surface: Polished/lapped Thickness: 0.1-2mm

2-6 inch Gallium phosphide (GaP) crystals crystal substrate,GaP wafer

 

 ZMKJ can provides high quality single crystal GaP wafer ( Gallium phosphide ) to electronic and optoelectronic industry in diameter up to 2 inch . Gallium phosphide ( GaP ) crystal is an orange-yellow semi-translucent material formed by two elements , Gallium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method . GaP wafer is an important semiconductor material which have unique electrical properties as other III-V compound materials and is widely used as red , yellow , and green LED ( light-emitting diodes ) . We have as-cut single crystal GaP wafer for your LPE application , and also provide epi ready grade GaP wafer for your MOCVD & MBE epitaxial application . Please contact us for more product information .

 

Electrical and Doping Specification

 

Product Name: Gallium phosphide (GaP) crystal substrate

Technical parameters:

 

 

 

 
Crystal structure Cubic a = 5.4505 Å
Growth method Czochralski method
Density 4.13 g / cm 3
Mp 1480 o C 1
Thermal expansion coefficient 5.3 x10 -6 / O C
Dopant S-doped undoped
Direction <111> or <100> <100> or <111>
Type N N
Thermal Conductivity 2 ~ 8 x10 17 / cm 3 4 ~ 6 x10 16 / cm 3
Resistivity W.cm 0.03 to 0.3
EPD (cm -2) <3x10 5 <3x10 5
Specifications:

 

Crystallographic directions: <111>, <100> ± 0.5 o

Standard polished Size: Ø2 "* 0.35mm; Ø2" * 0.43mm. Ø3"x0.3mm

Note: according to customer requirements with special dimensions and orientation substrates
StandardPacking 1000 clean room, 100 clean bag or single box packaging

 

Dopant available S / Zn / Cr / Undoped
Type of conductivity N / P ,Semi-conducting / Semi-insulating
Concentration 1E17 - 2E18 cm-3
Mobility > 100 cm2 / v.s.

Product Specification

Growth LEC
Diameter Ø 2"
Thickness 400 um
Orientation <100> / <111> / <110> or others
Off orientation Off 2° to 10°
Surface One side polished or two sides polished
Flat options EJ or SEMI. Std .
TTV <= 10 um
EPD <= 2E5 cm-2
Grade Epi polished grade / mechanical grade
Package Single wafer container

 

Sample pictures

2 - 6 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.1 - 2mm Thickness

 

FAQ:

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 3pcs.

(2) For customized products, the MOQ is 10-20pcs up.

 

we also can provide other materials semiconductor wafer as like below

2 - 6 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.1 - 2mm Thickness

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

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