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colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer

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colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer

China colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer supplier
colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer supplier colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer supplier colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer supplier

Large Image :  colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer

Product Details:

Place of Origin: china
Brand Name: zmsh
Model Number: HPSI

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Price: by case
Packaging Details: by customized case
Delivery Time: 15days within
Supply Ability: 100pcs
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Detailed Product Description
Industry: Semiconductor Substrate Materials: Sic Crystal
Application: 5G, Device Material, MOCVD,power Electronics Type: 4H-N,semi ,No Doped
Color: Green,blue, White Hardeness: 9.0 Up

Hardness9.4 colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer for High  transmittance optical application 

 

SiC Wafer Feature

 

Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

 

 

Physical & Electronic Properties of SiC Compared to GaAa and Si

  Wide Energy Bandgap (eV)

4H-SiC: 3.26 6H-SiC: 3.03 GaAs: 1.43 Si: 1.12

Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects because of the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of blue light emitting diodes and nearly solar blind UV photodetectors possible.

High Breakdown Electric Field [V/cm (for 1000 V operation)]

4H-SiC: 2.2 x 106* 6H-SiC: 2.4 x 106* GaAs: 3 x 105 Si: 2.5 x 105

SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices. Additionally, it allows the devices to be placed very close together, providing high device packing density for integrated circuits.

High Thermal Conductivity (W/cm · K @ RT)
4H-SiC: 3.0-3.8 6H-SiC: 3.0-3.8 GaAs: 0.5 Si: 1.5

SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated.

High Saturated Electron Drift Velocity [cm/sec (@ E ≥ 2 x 105 V/cm)]

4H-SiC: 2.0 x 107 6H-SiC: 2.0 x 107 GaAs: 1.0 x 107 Si: 1.0 x 107
SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC.

 

Applications

*III-V Nitride Deposition    *Optoelectronic Devices

*High-Power Devices           *High-Temperature Devices

 

 
2.Size Of Material Ingot
 

2”

3”

4”

6”

 

Polytype

4H/6H

4H

4H 

4H

 

Diameter

50.80mm±0.38mm

76.2mm±0.38mm

100.0mm±0.5mm

150.0mm±0.2mm

 

       
 
3.products in details
 
colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer 

colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer

 

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS by FOB.

 

Q: How to pay?

A: T/T, IN advance 

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 30g.

(2) For customized commen products, the MOQ is 50g

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

 

 
Thanks~~~
 

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

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