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UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer

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UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer

China UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer supplier
UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer supplier UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer supplier UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer supplier

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Product Details:

Place of Origin: CHINA
Brand Name: zmkj
Model Number: 2-4inch GaN Template

Payment & Shipping Terms:

Minimum Order Quantity: 2pc
Price: by case
Packaging Details: single wafer case in 100-grade cleaning room
Delivery Time: 2-4weeks
Payment Terms: L/C, T/T
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Detailed Product Description
Material: Layer On Sapphire Wafer Method: HVPE
Size: 2inch ,4inch Thickness: 430+15um Or 650um
Industry: LD,led,laser Device,detector, Surface: Double Or Single Side Polished

 

UVC LED  EPI Substrates layer 2inch ,4inch Gallium Nitride AlN template wafer on sapphire or sic substrates,

HVPE Gallium Nitride wafer,AlN templates 

  1. III-Nitride(GaN,AlN,InN)

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.

Product  Aluminum nitride (AlN) film
Product Description: AllN Epitxial proposed model saphhire hydride vapor phase epitaxy (HVPE) method. Aluminum nitride film is also cost-effective way to replace the aluminum nitride single crystal substrate. Branch Crystal sincerely welcome your inquiry!
Technical parameters:
Size 50mm ± 2mm
Sapphire substrate orientation c-axis (0001) ± 1.0deg
Macro defect density <5cm-2
Available surface area 90%
Surface treatment before As Grown Epi-ready
Container Single Chip

 

Specifications:

10x10x0.5mm, 10x10x1mm, dia2 "x1mm;

Can be customized according to customer demand special orientation and size.

Standard Packaging: 1000 clean room, 100 clean bag or single box packaging
 


Specifications:

  4” AlN Templates 2-4inch  size also ok
Item AlN-T
Dimensions Ф 100±0.3mm
Substrate Sapphire, SiC, GaN
Thickness 1000nm+/- 10% (AlN thickness)
Orientation C-axis(0001) ± 1°
Conduction Type Semi-Insulating
Dislocation Density XRD FWHM of (0002) < 200 arcsec.
XRD FWHM of (10-12) < 1000 arcsec
Useable Surface Area > 80%
Polishing Standard: SSP
Option: DSP
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. or single cassettes.

Other size aslike 5x5mm,10x10mm,2inch ,3inch also can be customized. 

 

UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer

Application:

UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer

UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer

UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer

UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer

 

About Our Team

    ZMKJ locates in the city of Shanghai, Which is the best city of China,

and our factory is founded in Wuxi city in 2014, but in the semiconductor material,

have the good  experience for  almost 10years.
   We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
     It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.


UVC led substrates 2Inch 4inch Gallium Nitride GaN AlN Template Wafer On Sapphire wafer

 

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

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