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Crystallized HVPE GaN Gallium Nitride Wafer For Laser Device

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Crystallized HVPE GaN Gallium Nitride Wafer For Laser Device

Crystallized HVPE GaN  Gallium Nitride Wafer For Laser Device
Crystallized HVPE GaN  Gallium Nitride Wafer For Laser Device

Large Image :  Crystallized HVPE GaN Gallium Nitride Wafer For Laser Device

Product Details:

Place of Origin: CHINA
Brand Name: zmkj
Model Number: GaN-2INCH

Payment & Shipping Terms:

Minimum Order Quantity: 1pc
Price: by case
Packaging Details: single wafer case in 100-grade cleaning room
Delivery Time: 2-4weeks
Payment Terms: L/C, T/T
Detailed Product Description
Material: GaN Single Crystal Method: HVPE
Size: 2inch Thickness: 330um
Industry: LD,led,laser Device,detector, Color: White
Package: Single Wafer Cassette Case Package By Vacuum Condition
High Light:

HVPE gallium nitride wafer

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GaN gallium nitride wafer

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HVPE gan wafer

2inch free-standing GaN substrates,GaN wafer for LD,semiconducting Gallium Nitride Wafer for led,GaN template,10x10mm GaN substrates, native GaN wafer,

 

  1. III-Nitride(GaN,AlN,InN)

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.

Crystallized HVPE GaN  Gallium Nitride Wafer For Laser Device 0Crystallized HVPE GaN  Gallium Nitride Wafer For Laser Device 1

 

 

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,

Laser Projection Display, Power Device, etc.

Crystallized HVPE GaN  Gallium Nitride Wafer For Laser Device 2

 

Specifications:

Item GaN-FS-N
Dimensions Ф 50.8mm ± 1mm
Marco Defect Density A Level ≤ 2 cm-2
B Level > 2 cm-2
Thickness 300 ± 25 µm
Orientation C-axis(0001) ± 0.5°
Orientation Flat (1-100) ± 0.5°, 16.0 ± 1.0mm
Secondary Orientation Flat (11-20) ± 3°, 8.0 ± 1.0mm
TTV(Total Thickness Variation) ≤15 µm
BOW ≤20 µm
Conduction Type N-type
Resistivity(300K) < 0.5 Ω·cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

2. Our Enterprise Vision

we will provide high quality GaN substrate and application technology for the industry.

High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life and high stability LDs, high power and high reliability micro-wave devices, High brightness and high efficiency, energy-saving LED.

 

Crystallized HVPE GaN  Gallium Nitride Wafer For Laser Device 3

 

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Q: What's the MOQ?
(1) For inventory, the MOQ is 1pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.

Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.

 

 

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

Send your inquiry directly to us (0 / 3000)