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3 Inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates

3 Inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates

  • High Light

    Research Test Grade Gallium Arsenide Wafer

    ,

    N Type Gallium Arsenide Substrate

    ,

    3 Inch GaAs Epi Wafer

  • Material
    MONOcrystal GaAs
  • Industry
    Semicondutor Wafer For Ld Or Led
  • Application
    Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates
  • Method
    CZ
  • Size
    2inch~6inch
  • Thickness
    0.425mm
  • Surface
    Cmp/etched
  • Doped
    Si-doped
  • MOQ
    10PCS
  • Grade
    Research Grade/dummy Grade
  • Place of Origin
    china
  • Brand Name
    zmsh
  • Certification
    ROHS
  • Model Number
    6INCH GaAs wafer
  • Minimum Order Quantity
    10pcs
  • Price
    by case
  • Packaging Details
    PET film in 100-grade cleaning room
  • Delivery Time
    1-4weeks
  • Supply Ability
    500pcs/month

3 Inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates

3inch VGF GaAs wafers Research test grade N-Type GaAs substrates 425um

2inch 3inch 4inch  6inch VGF method N-Type  un-doped  GaAs substrates 2degree off 675um SSP DSP GaAs wafers


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GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the semiconductor industry. Less power consumption and more efficiency offered by this GaAs wafers are attracting the market players to adopt these wafers, thereby increasing the demand for GaAs wafer. Generally, this wafer is used to manufacture semiconductors, light emitting diodes, thermometers, electronic circuits, and barometers, besides finding application in the manufacturing of low melting alloys. As the semiconductor and electronic circuit industries continue to touch new peaks, the GaAs market is booming. Gallium arsenide of GaAs wafer has the power of generating laser light from electricity. Especially polycrystalline and single crystal are the two major type of GaAs wafers, which are utilized in the production of both the microelectronics and optoelectronics to create LD, LED, and microwave circuits. Therefore, the extensive range of GaAs applications, particularly in optoelectronics and microelectronics industry is creating a demand influx in the GaAs Wafer Market. Previously, the optoelectronic devices were mainly used on a broad range in short-range optical communications and computer peripherals. But now, they are in demand for some emerging applications such as LiDAR, augmented reality, and face recognition. LEC and VGF are two popular methods which are improving the production of GaAs wafer with high uniformity of electrical properties and excellent surface quality. Electron mobility, single junction band-gap, higher efficiency, heat and moisture resistance, and superior flexibility are the five distinct advantages of GaAs, which are improving the acceptance of GaAs wafers in the semiconductor industry.

Specification detail
 
GaAs (Gallium Arsenide) for LED Applications
Item Specifications Remarks
Conduction Type SC/n-type  
Growth Method VGF  
Dopant Silicon  
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15° off (110) Other misorientation available
OF EJ or US  
Carrier Concentration (0.4~2.5)E18/cm3  
Resistivity at RT (1.5~9)E-3 Ohm.cm  
Mobility 1500~3000 cm2/V.sec  
Etch Pit Density <500/cm2  
Laser Marking upon request  
Surface Finish P/E or P/P  
Thickness 220~350um  
Epitaxy Ready Yes  
Package Single wafer container or cassette  

 

GaAs (Gallium Arsenide) ,Semi-insulating for Microelectronics Applications

 

Item
Specifications
Remarks
Conduction Type
Insulating
 
Growth Method
VGF
 
Dopant
Undoped
 
Wafer Diamter
2, 3, 4 & 6 inch
Ingot available
Crystal Orientation
(100)+/- 0.5°
 
OF
EJ, US or notch
 
Carrier Concentration
n/a
 
Resistivity at RT
>1E7 Ohm.cm
 
Mobility
>5000 cm2/V.sec
 
Etch Pit Density
<8000 /cm2
 
Laser Marking
upon request
 
Surface Finish
P/P
 
Thickness
350~675um
 
Epitaxy Ready
Yes
 
Package
Single wafer container or cassette
 
No. Item Standard Specification
1 Size   2" 3" 4" 6"
2 Diameter mm 50.8±0.2 76.2±0.2 100±0.2 150±0.5
3 Growth Method   VGF
4 Doped   Un-doped, or Si-doped, or Zn-doped
5 Conductor Type   N/A, or SC/N, or SC/P
6 Thickness μm (220-350)±20 or (350-675)±25
7 Crystal Orientation   <100>±0.5 or 2 off
OF/IF Orientation Option   EJ, US or Notch
Orientation Flat (OF) mm 16±1 22±1 32±1 -
Identification Flat (IF) mm 8±1 11±1 18±1 -
8 Resistivity (Not for
Mechanical
Grade)
Ω.cm (1-30)´107, or (0.8-9)´10-3, or 1´10-2-10-3
Mobility cm2/v.s ≥ 5,000, or 1,500-3,000
Carrier Concentration cm-3 (0.3-1.0)x1018, or (0.4-4.0)x1018,
or As SEMI
9 TTV μm ≤10
Bow μm ≤10
Warp μm ≤10
EPD cm-2 ≤ 8,000 or ≤ 5,000
Front/Back Surface   P/E, P/P
Edge Profile   As SEMI
Particle Count   <50 (size>0.3 μm,count/wafer),
or AS SEMI
10 Laser Mark   Back side or upon request
11 Packaging   Single wafer container or cassette

3 Inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates 03 Inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates 13 Inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates 2


ABOUT OUR ZMKJ

     ZMKJ locates in the city of Shanghai, Which is the best city of China, and our factory is founded
in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates
and custiomized optical glass parts.components widely used in electronics, optics,
optoelectronics and many other fields. We also have been working closely with many domestic
and oversea universities, research institutions and companies, provide customized products
and services for their R&D projects.
   It's our vision to maintaining a good relationship of cooperation with our all customers by our
  good reputatiaons. so we also can provide some other materials substrates as like:
3 Inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates 3
Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process!
3 Inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates 4
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and  by FOB
 and pay condition of 50% deposit,50% before delivery.
 
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
 

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.