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Home > Products > Gallium Nitride Wafer > 2 Inch Gallium Nitride Wafer Sapphire Template Epi Wafers

2 Inch Gallium Nitride Wafer Sapphire Template Epi Wafers

Product Details

Place of Origin: CHINA

Brand Name: ZMSH

Certification: rohs

Model Number: 2inch GaN-ON-sapphire GaN Template

Payment & Shipping Terms

Minimum Order Quantity: 5pcs

Price: usd150.00

Packaging Details: single wafer container or 25pcs cassette box under 100cleaning room

Delivery Time: 1-4week;

Payment Terms: T/T, Western Union

Supply Ability: 1000pcs/month

Get Best Price
Highlight:

Template Epi Wafers

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Epi Gallium Arsenide Wafer

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Gallium Nitride Sapphire Substrates

Material:
GaN-ON-sapphire Epi-wafers
Substrate:
Sapphire
Size:
2-6inch
Surface:
SSP/DSP
OEM MOQ:
8PCS
Thickness:
430um For 2inch
Epi Thickness:
1-5um
Application:
Epitaxial HEMT
Customized:
Ok
Material:
GaN-ON-sapphire Epi-wafers
Substrate:
Sapphire
Size:
2-6inch
Surface:
SSP/DSP
OEM MOQ:
8PCS
Thickness:
430um For 2inch
Epi Thickness:
1-5um
Application:
Epitaxial HEMT
Customized:
Ok
2 Inch Gallium Nitride Wafer Sapphire Template Epi Wafers

 

 

2inch 4inch 6inch GaN-ON-sapphire Blue led Green LED  epi-wafer PSS Wafers 

2inch 4inch uGaN/nGaN/pGaN-on-Sapphire template epi-wafers

 

As a leading manufacturer and supplier of GaN (Gallium Nitride) epi wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave electronics applications with a thickness of 2 on C-plane sapphire substrates 430um inch, 4 inch 520um, 650um and 6 inch 1000-1300um, the normal value of GaN buffer layer is 2-4um; we can also provide customized structures and parameters according to customer requirements.

 

 

GaN on Sapphire Templates

 

GaN on sapphire templates are available in diameters from 2" up to 6"  and consist of a thin layer of crystalline GaN grown by HVPE on a sapphire substrate. Epi-ready templates now available

As a leading manufacturer and supplier of GaN (Gallium Nitride) epi wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave electronics applications with a thickness of 2 on C-plane sapphire substrates 430um inch, 4 inch 520um, 650um and 6 inch 1000-1300um, the normal value of GaN buffer layer is 2-4um; we can also provide customized structures and parameters according to customer requirements.

 

Specs for uGaN/nGaN/pGaN-on-Sapphire template
ZMKJ Semiconductor is committed to produce high quality uGaN/nGaN/pGaN materials on planar
Sapphire substrates or PSS with varied wafer size from 2 inch to 6inch. The wafer quality meets the
following specs:
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2 Inch Gallium Nitride Wafer Sapphire Template Epi Wafers 0

 

 

For more information, please visit our website other page;
send us email at eric-wang@galliumnitridewafer.com

ZMSH is a leading manufacturer of semiconductor material in China. ZMSH develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. Our technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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