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4 H - SEMI Polished Sic Wafer 6 Inch 9.0 Hardness For Device Material

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4 H - SEMI Polished Sic Wafer 6 Inch 9.0 Hardness For Device Material

China 4 H - SEMI Polished Sic Wafer 6 Inch 9.0 Hardness For Device Material supplier
4 H - SEMI Polished Sic Wafer 6 Inch 9.0 Hardness For Device Material supplier 4 H - SEMI Polished Sic Wafer 6 Inch 9.0 Hardness For Device Material supplier 4 H - SEMI Polished Sic Wafer 6 Inch 9.0 Hardness For Device Material supplier

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Product Details:

Place of Origin: china
Brand Name: zmsh
Model Number: sic-6inch 4h-n

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Price: by case
Packaging Details: by customized case
Delivery Time: 15days within
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Detailed Product Description
Industry: Semiconductor Substrate Materials: Sic Crystal
Application: 5G, Device Material, MOCVD,power Electronics Type: 4H-N,semi ,No Doped
Color: Green,blue, White Hardeness: 9.0 Up

6inch sic substrates, sic ingot ,sic crystal ingots ,sic crystal block, sic semiconductor substrates,6inch Silicon Carbide Wafer,4H-semi SiC wafer,6inch 4H-N type dummy grade sic wafer for test,
 
1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s
 
2. Material Size describtion
6 inch diameter Silicon Carbide (SiC) Substrate Specification
           
Grade Z grade P grade R grade D grade
       
ZERO MPD Production Research Grade Dummy Grade
       
 Diameter 150mm±0.5 mm
Thickness 350 μm±25μm or 500±25um or by customized size
 Wafer Orientation Off axis : 4.0° toward <1120 > ±0.5° for 4H-N
 Micropipe Density ≤1cm-2 ≤5 cm-2 ≤15 cm-2 ≤50 cm-2
Resistivity 4H-N 0.015~0.028 Ω·cm
4/6H-SI >1E5 Ω·cm
 Primary Flat {10-10}±5.0°
 Primary Flat Length 47.5mm±2.5 mm
 Edge exclusion 3mm
 TTV/Bow /Warp ≤15μm /≤40μm /≤60μm
 Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
  None None 1 allowed, ≤1 mm
Cracks by high intensity light
 
Hex Plates by high intensity light Cumulative area≤1 % Cumulative area≤1 % Cumulative area≤3 %
  None Cumulative area≤2 % Cumulative area≤5%
Polytype Areas by high intensity light
 
  3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 8 scratches to 1×wafer diameter cumulative length
Scratches by high intensity light
 
Edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each
 Contamination by high intensity light None
 
3. products
4 H - SEMI Polished Sic Wafer 6 Inch 9.0 Hardness For Device Material4 H - SEMI Polished Sic Wafer 6 Inch 9.0 Hardness For Device Material
 

 

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and

Freight is in accordance with the actual settlement.

 

Q: How to pay?

A: T/T 100% deposit before delivery.

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

(2) For customized commen products, the MOQ is 10pcs up.

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

 

Q: Do you have standard products?

A: Our standard products in stock. as like substrates 4inch 0.35mm.

 

 
Thanks~~~
 

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

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