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Wurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates Template

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Wurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates Template

China Wurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates Template supplier
Wurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates Template supplier Wurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates Template supplier

Large Image :  Wurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates Template

Product Details:

Place of Origin: CHINA
Brand Name: zmkj
Model Number: GaN-templates

Payment & Shipping Terms:

Minimum Order Quantity: 5pc
Price: by case
Packaging Details: single wafer case in 100-grade cleaning room
Delivery Time: 2-4weeks
Payment Terms: L/C, T/T
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Detailed Product Description
Material: GaN Epi On Sapphire Carrier Method: HVPE
Size: 2inch Thickness: 430um
Industry: LD,led,laser Device,detector, Surface: Single Side Polished

2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,

GaN  Specifications/Special Features:

  1. Gallium nitride (GaN) is a very hard made material that has a wurtzite crystal structure and probably is the most important semiconductor material as the third generation semi material.
  2.  It can be used to emit brilliant light in the form of light emitting diodes (LEDs) and laser diodes, as well as being the key material for next generation high frequency, high power transistors capable of operating at high temperatures.
  3. GaN based epitaxial wafer (Sapphire,SiC) Epitaxial wafers are grown by MBE or MOCVD method , one layer or multi-layer structures on Sapphire substrates , diameter up to 4 inch.

III-Nitride(GaN,AlN,InN)Forbidden band width (light emitting and absorption) cover the ultraviolet,

visible light and infrared.GaN can be used in many areas such as LED display, High-energy Detection

and Imaging,Laser Projection Display, Power Device, etc.

 Wurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates Template
 
Specifications:
 

2” GaN Templates

 

 Item

 

GaN-T-N  

GaN-T-S

Dimensions

Ф 2”

 Thickness

15 μm, 20 μm, 30 μm, 40 μm

30 μm, 90 μm

 Orientation

C-axis(0001) ± 1°

Conduction Type

N-type

Semi-Insulating

 Resistivity(300K)

< 0.05 Ω·cm

>106 Ω·cm

 Dislocation Density

Less than 1x108 cm-2

Substrate structure

 
Thick GaN on 430um or 330um Sapphire(0001)

 

 Useable Surface Area

> 90%

Polishing

Standard: SSP Option: DSP

 Package

Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

Wurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates TemplateWurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates Template


Wurtzite Crystal Structure LED Wafer GaN Gallium Nitride Substrates Template
-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF by FOB.
Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
Q: How to pay?
100%T/T In advance, Paypal, West Union, MoneyGram,


 

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

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