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| Place of Origin | china |
| Brand Name | zmsh |
| Certification | ROHS |
| Model Number | GaO substrates |
10x15mm 001 Gallium oxide GaO substrate Mg doping
10x10mm Gallium oxide substrate monocline structure
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| Orientation | 100 | 100 | 100 |
| Doping | UID | Mg | Fe |
| electrical parameter | 1×1017~3×1018cm-3 | ≥1010Ω·cm | ≥1010Ω·cm |
arcsec | ≤150 | ≤150 | ≤150 |
| dislocation density | ＜1×105 cm-2 | ＜1×105 cm-2 | ＜1×105 cm-2 |
Feature
Although gallium oxide has poor thermal conductivity, its band gap exceeds that of silicon carbide, gallium nitride and silicon. Since the band-gap width measures the energy required to bring electrons into the on-state, systems made of materials with a wider band-gap can be thinner and lighter than those made of materials with a narrower band-gap, and can handle higher power, promising high-voltage and low-loss power components at low cost. In addition, the wide band gap allows operation at higher temperatures, reducing the need for a large cooling system.
Gallium oxide is a new kind of power semiconductor material, which has more and more obvious advantages in high power applications. Experts generally believe that gallium oxide will become an important supplement to silicon carbide and gallium nitride.
Gallium oxide is more likely to play a role in expanding the power and voltage range available for ultra-wide bandgap systems. The most promising applications may be high-voltage rectifiers in power regulation and distribution systems, such as electric vehicles and photovoltaic solar systems.
ABOUT OUR ZMKJ
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.
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