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Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' 4'' Thickness 350um
  • Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' 4'' Thickness 350um
  • Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' 4'' Thickness 350um
  • Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' 4'' Thickness 350um

Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' 4'' Thickness 350um

Place of Origin China
Brand Name ZMSH
Certification ROHS
Model Number Indium Phosphide Wafer
Product Details
Product Name:
InP Substrates
Bow & Warp:
≤10μm
Material:
Indium Phosphide Wafer
Orientation:
100+/-0.05 Degree
Surface Finish:
Double Side Polished
Surface Roughness:
Ra≤0.6nm
TTV:
≤6μm
Wafer Diameter:
2 Inch 3inch 4inch
Wafer Thickness:
350um 500um 625um
High Light: 

Double Side Polished Inp Wafer

,

4'' Thickness Indium Phosphide Wafer

,

InP Semiconductor Substrates

Product Description

Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' Thickness 350um

 

 

 

Description of Indium Phosphide:

 

Indium Phosphide (InP) chips are a widely used material in optoelectronics and semiconductor devices. It has the following advantages:

 

  • High electron mobility: Indium phosphide chips have a high electron mobility, which means that electrons move faster through the material. 

 

  • Controlled material properties: The properties of indium phosphide wafers can be regulated by controlling the epitaxial growth process of the material and doping techniques.

 

  • Wide band gap: The indium phosphide wafer has a wide band gap, enabling it to operate in the visible and infrared light ranges.

 

  • High saturation drift speed: The indium phosphide wafer has a high saturation drift speed, which means that the electron drift speed reaches the maximum under a high electric field. 

 

  • Excellent thermal conductivity: The indium phosphide wafer has a high thermal conductivity, which means that it is able to efficiently conduct and dissipate heat, thereby improving the reliability and performance stability of the device. 

 

Features of Indium Phosphide:

 

Indium Phosphide (InP) chips have some remarkable characteristics that make them widely used in optoelectronics and semiconductors. The following are some of the main characteristics of indium phosphide chip materials:

 

  • Direct band gap: Indium phosphide has a direct band gap characteristic that makes it excellent in optical devices.

 

  • Wide band gap range: Indium phosphide has a wide band gap ranging from infrared to ultraviolet spectrum.

 

  • High electron mobility: Indium phosphide has a high electron mobility, which makes it excellent in high-frequency electronics and high-speed optoelectronics.

 

  • Excellent thermal conductivity: Indium phosphide has a high thermal conductivity and can effectively dissipate heat.

 

  • Good mechanical and chemical stability: Indium phosphide chips have good mechanical and chemical stability and can maintain stability and reliability under different environmental conditions.

 

  • Adjustable band structure: The band structure of indium phosphide materials can be regulated by doping and alloying techniques to meet the requirements of different devices.

 

 

Technical Parameters of Indium Phosphide:

 

Item

Parameter

UOM

Material

InP

 

Conduction type/Dopant

S-C-N/S

 

Grade

Dummy

 

Diameter

100.0+/-0.3

mm

Orientation

(100) +/-0.5°

 

Lamellar twin area

useful single crystal area with (100) orienation > 80%

 

Primary Flat Orientation

EJ(0-1-1)

mm

Primary Flat Length

32.5+/-1

 

Secondary Flat Orientation

EJ(0-11)

 

Secondary Flat Length

18+/-1

 

 

 

 

 

Applications of Indium Phosphide:

 

Indium Phosphide (InP) wafers have a wide range of applications in optoelectronics and semiconductor substrates:

 

  • Optical communication: InP wafers are widely used in the field of optical communication for high-speed optical fiber communication systems. They are used to fabricate devices such as lasers, optical modulators, optical receivers, optical amplifiers and optical fiber couplers.

 

  • Photoelectronic devices: InP wafers are used to make photoelectronic devices such as photodiodes, photodetectors, solar cells and photocouplers.

 

  • High-speed electronic devices: InP substrates are widely used in the field of high-frequency electronic devices. In particular, InP wafes' high electron mobility transistors (HEMTs) are used to prepare devices such as high-frequency amplifiers, RF switches and microwave integrated circuits for applications such as wireless communications, radar systems and satellite communications.

 

  • Integrated optical devices: InP wafers are used to prepare integrated optical devices such as optical waveguides, optical modulators, optical switches and optical amplifiers.

 

  • Photonics research: InP wafers play an important role in photonics research. They are used in laboratory research, quantum optics, quantum information processing and optical quantum devices.

 

  • In addition to the above applications, InP wafers are also used in other fields, such as optical sensing, biomedicine, light storage and semiconductor substrates

 

Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' 4'' Thickness 350um 0

 

 

 

FAQ:

 

Q1: What brand name is the InP wafer?
A1: The 
InP wafer is made by ZMSH.

 

Q2: What's the diameter of the InP wafer?
A2: The diameter of 
InP wafer is 2'', 3'', 4''.

 

Q3: Where is the InP wafer from?
A3: The 
InP wafer is from China.

 

Q4: Is the InP wafer ROHS certified?
A4: Yes, the 
InP wafer is ROHS certified.

 

Q5: How many InP wafes can I buy at 1 time?
A5: The minimum order quantity of the 
InP wafer is 5pcs.

 

 

 

Other products: 

 

Silicon wafers

Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' 4'' Thickness 350um 1

 

 

 

 

 

 

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