SHANGHAI FAMOUS TRADE CO.,LTD 86-1580-1942596 eric_wang@zmsh-materials.com
Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate

Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate

  • High Light

    gaas wafer

    ,

    indium arsenide wafer

  • Material
    GaAs Single Crystal Substrates
  • Industry
    Semicondutor Wafer
  • Application
    Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates
  • Method
    VFG
  • Size
    2-6inch Commen
  • Place of Origin
    china
  • Brand Name
    zmsh
  • Certification
    no
  • Model Number
    GaAs-001
  • Minimum Order Quantity
    5pcs
  • Price
    by case
  • Packaging Details
    25pcs casstle in 100-grade cleaning room
  • Delivery Time
    1-4weeks
  • Supply Ability
    1000pcs/month

Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate

2inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer(A compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure)

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Application:

 

1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.

 

2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.

 

3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.

Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate 0

 

Specification

 

Parameter

Guaranteed / Actual Values UOM
Growth Method: VGF  
Conduct Type: S-I-N  
Dopant: Undoped  
Diameter: 50.8± 0.1 mm
Orientation: (100)± 0.50  
OF location/length: EJ [ 0-1-1]± 0.50/16±1  
IF location/length: EJ [ 0-1 1 ]± 0.50/7±1  
Resistivity: Min: 1.0 E8 Max: 2.2 E8 Ω·cm
Mobility: >2000   cm2/v.s
EPD: <1500   / cm2
Thickness: 350± 20 µm
Edge Rounding: 0.25 mmR
Laser Marking: N/A  
TTV/TIR: Max: 10 µm
BOW: Max: 10 µm
Warp: Max: 10 µm
Partical Count: 50/wafer(for particle>0.3um)  
Surface Finish– front: Polished  
Surface Finish –back: Etched  
Epi-Ready:

Yes

 

 

Parameter Customer’s Requirements Guaranteed / Actual Values UOM
Growth Method: VGF VGF  
Conduct Type: S-C-P S-C-P  
Dopant: GaAs-Zn GaAs-Zn  
Diameter: 50.8± 0.4 50.8± 0.4 mm
Orientation: (100)± 0.50 (100)± 0.50  
OF location/length: EJ [ 0-1-1]± 0.50/16±1 EJ [ 0-1-1]± 0.50/16±1  
IF location/length: EJ [ 0-1 1 ]± 0.50/7±1 EJ [ 0-1 1 ]± 0.50/7±1  
Ingot CC: Min: 1 E19 Max: 5 E19 Min: 1.4 E19 Max: 1.9 E19 /cm3
Resistivity: Min: N/A Max: N/A Min: N/A Max: N/A Ω·cm
Mobility: Min: N/A Max: N/A Min: N/A Max: N/A cm2/v.s
EPD: Max: 5000 Min: 600 Max: 700 / cm2
Thickness: 350±25 350±25 µm
Surface Finish– front: Polished Polished  
Surface Finish –back: Etched Etched  
Epi-Ready:

Yes

Yes

 

Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate 1

FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics

Q: Do you have inspection report for material?
We can supply detail report for our products.
 

Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process!

Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate 2