N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch

Place of Origin china
Brand Name zmsh
Certification no
Model Number GaAs-3inch
Minimum Order Quantity 5pcs
Price by case
Packaging Details 25pcs casstle in 100-grade cleaning room
Delivery Time 1-4weeks
Supply Ability 1000pcs/month
Product Details
Material GaAs Single Crystal Substrates Industry Semicondutor Wafer
Application Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates Method VFG
Size 2-6inch Commen
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indium arsenide wafer


laalo3 substrate

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Product Description


3inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer

(A compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure)


GaAs) Gallium Arsenide Wafers

we develops and manufactures compound semiconductor substrates

the factory has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging.

Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.

We are always dedicated to improve the quality of currently substates and develop large size substrates.



1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.

2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.

3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.

N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch 0



Parameter Guaranteed / Actual Values UOM
Growth Method: VGF  
Conduct Type: S-I-N  
Dopant: Undoped  
Diameter: 76.2± 0.2 mm
Orientation: (100) 00± 0.50  
OF location/length: EJ [ 0-1-1]± 0.50/22±2  
IF location/length: EJ [ 0-1 1 ]± 0.50/11±2  
Resistivity: Min: 1E8 Max: 1.03E8 Ω·cm
Mobility: Min: 5613 Max: 6000 cm2/v.s
EPD: Min: 700 Max: 800 Max:
Thickness: 625±20 µm
Edge Rounding: 0.375 mmR
Laser Marking: N/A  
TTV: N/A µm
Surface Finish– front: Polished  
Surface Finish –back: Etched  




N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch 1N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch 2


Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics

Q: Do you have inspection report for material?
We can supply detail report  for our products.

Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product , we will take a different packaging process!

N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch 3