Product Details
Place of Origin: china
Brand Name: zmsh
Model Number: InAs wafer
Payment & Shipping Terms
Minimum Order Quantity: 10pcs
Price: by case
Packaging Details: PET film in 100-grade cleaning room
Delivery Time: 1-4weeks
Supply Ability: 500pcs/month
Material: |
InAs Single Crystal Substrates |
Industry: |
Semicondutor Wafer |
Application: |
Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates |
Method: |
CZ |
Size: |
10X10mm~3inch |
Thickness: |
0.5mm |
Material: |
InAs Single Crystal Substrates |
Industry: |
Semicondutor Wafer |
Application: |
Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates |
Method: |
CZ |
Size: |
10X10mm~3inch |
Thickness: |
0.5mm |
2inch diameter 50.8mm 500um thickness InAs substrates,Indium arsenide InAs crystal wafer, N-type 3inch 0.6mm InAs wafer,10x10mm square InAs wafers
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InAs single crystal substrate can be grown InAsSb/In - AsPSb InNAsSb heterostructure materials,such as making 2 ~ 14 microns of infrared wavelength light-emitting devices, with InAs single crystal substrate can also be grown epitaxial AlGaSb superlattice materials, production for infrared quantum cascade lasers.
ZMKJ can provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 3 inch .
InAs crystal is a compound formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " InAs products with wide choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information .
General Properties
COMMON SPECIFICATIONS | |||||||
crystal | dope | type |
carrier concentration
cm-3
|
mobility rate(cm2/V.s)
|
dislocation density
(cm-2)
|
size | |
InAs
|
N
|
5*1016
|
2*104
|
<5*104
|
Φ2″×0.5mm
Φ3″×0.6mm
|
||
InAs
|
Sn
|
N
|
(5-20)*1017
|
>2000
|
<5*104
|
Φ2″×0.5mm
Φ3″×0.6mm
|
|
InAs
|
Zn
|
P
|
(1-20) *1017
|
100-300
|
<5*104
|
Φ2″×0.5mm
Φ3″×0.6mm
|
|
InAs
|
S
|
N
|
(1-10)*1017
|
>2000
|
<5*104
|
Φ2″×0.5mm
Φ3″×0.6mm
|
|
size(mm)
|
Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mmalso can be customized
|
||||||
Ra | Surface roughness(Ra):<=5A | ||||||
polished | 1sp or 2sp | ||||||
package |
100 grade packing in1000grade cleaning room
|
Growth | LEC |
---|---|
Diameter | Ø 2" / Ø 3" |
Thickness | 500 um ~ 625 um |
Orientation | <100> / <111> / <110> or others |
Off orientation | Off 2° to 10° |
Surface | One side polished or two sides polished |
Flat options | EJ or SEMI. Std . |
TTV | <= 10 um |
EPD | <= 15000 cm-2 |
Grade | Epi polished grade / mechanical grade |
Package | Single wafer container |
ABOUT OUR ZMKJ
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.