Aluminum Nitride AlN Ceramic Substrate, High Thermal Conductivity
0.5mm AlN Ceramic,6inch ceramic substrates
The aluminum nitride (AlN) ceramic has high thermal conductivity (5-10 times as the alumina ceramic),
low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance,chemical resistance, and the linear expansion coefficient is similar with Si.
As a new generation of ceramic material,AlN ceramic attracts more and more attention. In the leading
level of domestic enterprises’, the quality of our company AlN ceramic substrate reaches the international advanced level. It is widely used in communication components, high power led, power electronic devices and other fields.
Our cooperating factory can applied the casting-tape process for the manufacturing of alumina substrate. With good thermal conductivity, insulation, thermal shock resistance, well resistance and anti-acid and alkali etc., our ceramic substrates can be used in thick-film hybrid integrated circuits (HIC), LED ceramic radiating base, power module, semiconductor devices and other fields.
AlN Feature ＆ Advantagement
|- Product Name:||
Aluminium Nitride / AIN Ceramic Substrate
|- Material:||Aluminum Nitride / AlN|
|- Typical Characteristics:||
1. Very High Thermal Conductivity
2. Good Electrical Insulation
3. Corrosion Resistance
4. Good Flatness
|- Typical Applications:||
1. Power Electronic Device
2. High Brightness LED
3. Communication Device
|Properties / Material||96% Alumina||AlN|
|Dielectric Strength (KV/mm)||≥17||≥17|
|Dielectric Constant (1MHz)||10.6||8.9|
|Volume Resistivity (@20°C, Ω.cm)||≥1014||≥1014|
|Thermal Conductivity (@20°C, W/mk)||≥24||≥175|
|Thermal Expansion Coefficient (10-6/°C)||6.5-8.0||4.8|
|Flexural Strength (MPa)||≥350||≥450
|Thickness(mm)||lengthx width ( mm)|
|Diameter (mm)||Thickness (mm)|
Our AlN substrate can be polished(single and double polish) by the advanced machine which imported
from abroad. Ceramic substrate surface roughness can reach to 1nm without porous after being polished.
It is perfectly suitable for the device application of small spec, high precision , wiring density and good stability.
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