HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size

Place of Origin CHINA
Brand Name zmsh
Model Number GaN-001
Minimum Order Quantity 1pcs
Price by case
Packaging Details single wafer case in 100-grade cleaning room
Delivery Time 2-4weeks
Payment Terms L/C, , T/T
Supply Ability 10PCS/month
Product Details
Material GaN Single Crystal Industry Semiconductor Wafer,LED
Application Semiconductor Device,LD Wafer,LED Wafer, Explorer Detector,laser, TYPE HVPE Template
Customized Ok SIZE 10X10,5X5,20X20,30X30,DIA45MM,
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Product Description

2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LD,10x10mm size GaN chips,HVPE GaN wafer


About GaN Feature Introduce

 The growing demand for high-speed, high-temperature and high power-handling capabilities has madethe semiconductor industry rethink the choice of materials used as semiconductors. For instance,                      

as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain         Moore’s Law. But also in power electronics, So GaN semiconductor wafer is grown out for the need.              

 Due to its unique characteristics (high maximum current, high breakdown voltage, and high switching           frequency), Gallium Nitride  GaN is the unique material of choice to solve energy problems of the future.   GaN based systems have higher power efficiency, thus reducing power losses, switch at higher frequency, thus reducing size and weight.    


   GaN technology is used in numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore,                       

GaN is ideally suited for RF applications such as cellular base stations, radars and cable TV                             

infrastructure in the networking, aerospace and defense sectors, thanks to its high breakdown strength,low noise figure and high linearity.




Specifications for GaN Substrates



2”GaN Substrates  
Dimensions Ф 50.8mm ± 1mm
Marco Defect Density A Level ≤ 2 cm-2
B Level > 2 cm-2
Thickness 330 ± 25 µm
Orientation C-axis(0001) ± 0.5°
Orientation Flat (1-100) ± 0.5°, 16.0 ± 1.0mm
Secondary Orientation Flat (11-20) ± 3°, 8.0 ± 1.0mm
TTV(Total Thickness Variation) ≤15 µm
BOW ≤20 µm
Conduction Type N-type Semi-Insulating
Resistivity(300K) < 0.5 Ω·cm >106 Ω·cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

P-GaN on Sapphire

Conductivity P type
Dopant Mg
Concentration > 5E17 cm-3
Thickness 1 ~ 5 um
Resistivity < 0.5 ohm-cm
Substrate Ø 2" / Ø 3" / Ø 4" Sapphire wafer

HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size 0


  1. - Various LED's: white LED, violet LED, ultraviolet LED, blue LED
  2. - Environmental detection
  3. Substrates for epitaxial growth by MOCVD etc
  4. - Laser diodes: violet LD, green LD for ultra small projectors.
  5. - Power electronic devices
  6. - High frequency electronic devices
  7. Laser Projection Display, Power Device, etc.
  8. Date storage
  9. Energy-efficient lighting
  10. High- Efficiency Electronic devices
  11. New energy solor hydrogen technology
  12. Light source terahertz band

HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size 1

HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size 2