High Power Efficiency GaN wafer Gallium Nitride Wafer For Energy - Efficient Lighting
|Material||GaN Single Crystal||Industry||Semiconductor Wafer,LED|
|Application||Semiconductor Device,LD Wafer,LED Wafer, Explorer Detector，laser，||TYPE||HVPE And Template|
2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LED applicaion,10x10mm size GaN chips,HVPE GaN wafer
About GaN Feature Introduce
The growing demand for high-speed, high-temperature and high power-handling capabilities has madethe semiconductor industry rethink the choice of materials used as semiconductors. For instance,
as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. But also in power electronics, So GaN semiconductor wafer is grown out for the need.
Due to its unique characteristics (high maximum current, high breakdown voltage, and high switching frequency), Gallium Nitride GaN is the unique material of choice to solve energy problems of the future. GaN based systems have higher power efficiency, thus reducing power losses, switch at higher frequency, thus reducing size and weight.
GaN technology is used in numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore,
GaN is ideally suited for RF applications such as cellular base stations, radars and cable TV
infrastructure in the networking, aerospace and defense sectors, thanks to its high breakdown strength,low noise figure and high linearity.
- - Various LED's: white LED, violet LED, ultraviolet LED, blue LED
- - Environmental detection
- Substrates for epitaxial growth by MOCVD etc
- - Laser diodes: violet LD, green LD for ultra small projectors.
- - Power electronic devices
- - High frequency electronic devices
- Laser Projection Display, Power Device, etc.
- Date storage
- Energy-efficient lighting
- High- Efficiency Electronic devices
- New energy solor hydrogen technology
- Light source terahertz band
Specifications for GaN Substrates LED grade
|Dimensions||Ф 50.8mm ± 1mm|
|Marco Defect Density|
|C Level||> 2 cm-2|
|Thickness||330 ± 25 µm|
|Orientation||C-axis(0001) ± 0.5°|
|Orientation Flat||(1-100) ± 0.5°, 16.0 ± 1.0mm|
|Secondary Orientation Flat||(11-20) ± 3°, 8.0 ± 1.0mm|
|TTV(Total Thickness Variation)||≤15 µm|
|Resistivity(300K)||< 0.5 Ω·cm|
|Dislocation Density||Less than 5x106 cm-2|
|Useable Surface Area||> 90%|
|Polishing||Front Surface: Ra < 0.2nm. Epi-ready polished|
|Back Surface: Fine ground|
|Package||Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.|
Macro defect quanlity is ＜30pcs for LED grade wafers commen(15-30pcs)
1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.
Q: Is there any stock or standard product?
A: Yes, commen size as like2inch 0.3mm standard size always in stocks.
Q: How about the samples policy?
A: sorry, but suggest you can buy some 10x10mm size back for test firstly.
Q: If i place an order now ,how long would it be before i got delivery ?
A: standard size in stock in 1weeks can be expressed after payment.
and our payment term is 50％ deposit and left before delivery.