Product Details
Place of Origin: china
Brand Name: zmkj
Model Number: 4H-N, 4inch
Payment & Shipping Terms
Minimum Order Quantity: 10pcs
Price: by required
Packaging Details: Packaged in a class 100 clean room environment, in cassettes of single wafer containers
Delivery Time: 10-20days
Supply Ability: 100pcs/months
Material: |
Silicon Carbide Crystal |
Size: |
4inch |
Application: |
Seed Crystal Grade |
Resistivity: |
0.015~0.028Ω.cm |
Type: |
4H-N |
Thickness: |
1.6mm |
Surface: |
As-cut |
Grade: |
Production |
Material: |
Silicon Carbide Crystal |
Size: |
4inch |
Application: |
Seed Crystal Grade |
Resistivity: |
0.015~0.028Ω.cm |
Type: |
4H-N |
Thickness: |
1.6mm |
Surface: |
As-cut |
Grade: |
Production |
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device,
customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade;
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
| Product Name: | Silicon carbide (SiC) crystal substrate | ||||||||||||||||||||||||
| Product Description: | 2-6inch | ||||||||||||||||||||||||
| Technical parameters: |
|
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| Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A | ||||||||||||||||||||||||
| Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
2. substrates size of standard
|
4 inch diameter Silicon Carbide (SiC) Substrate Specification |
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| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | |||||
| Diameter | 100.0 mm±0.5 mm | ||||||||
| Thickness | 350 μm±25μm (200-2000um thickness also is ok) | ||||||||
| Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N | ||||||||
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |||||
| Resistivity | 4H-N | 0.015~0.028 Ω•cm | |||||||
| 6H-N | 0.02~0.1 Ω•cm | ||||||||
| 4/6H-SI | ≥1E5 Ω·cm | ||||||||
| Primary Flat and length | {10-10}±5.0° ,32.5 mm±2.0 mm | ||||||||
| Secondary Flat Length | 18.0mm±2.0 mm | ||||||||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||||||
| Edge exclusion | 3 mm | ||||||||
| TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm | ||||||||
| Roughness | Polish Ra≤1 nm ,CMP Ra≤0.5 nm | ||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | ||||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | ||||||
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | ||||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | ||||||
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||||||
| Contamination by high intensity light | None | ||||||||
Sic wafer ＆ ingots 2-6inch and other customized size also can be provided.
3.Products detail display
Delivery ＆ Package
Q1. Is your company a factory or trade company?
We are the factory and we also can do export ourself.
Q2.Is you company only work with sic business?
yes; however we don‘t grow the sic crystal by self.
Q3. Could you supply sample?
Yes,we can supply sapphire sample according to customer's requirement.
Q4. Do you have any stock of sic wafers ?
we usually keep some standard size sic wafers from 2-6inch wafers in stock.
Q5.Where is your company located?
Our company located in shanghai ,China.
Q6. How long will take to get the products?
Generally it will take 3~4 weeks to process.It is depend on the quantity and the size of the products.
