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Home > Products > Sapphire Wafer > Ultrathin Semicondutor Al2O3 Sapphire Substrate Plate For Laser System

Ultrathin Semicondutor Al2O3 Sapphire Substrate Plate For Laser System

Product Details

Place of Origin: china

Brand Name: zmsh

Model Number: dia300

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Price: by case

Packaging Details: Vacuum-sealed containers with nitrogen backfill in a class 100 environment

Delivery Time: 10-30days

Supply Ability: 10000pcs/months

Get Best Price
Highlight:

Al2O3 sapphire substrate

,

ultrathin sapphire substrate

,

semiconductor sapphire plate

Material:
99.999% Al2O3
Industry:
Led,optical Glass,eli-ready Wafer
Application:
Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics
Color:
White Or Red Or Blue
Vision Light Transmissivity:
85%
Advantagement:
High Hardness9.0,wear Resistance,corrosion Resistance
Type:
Single Crystal
Material:
99.999% Al2O3
Industry:
Led,optical Glass,eli-ready Wafer
Application:
Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics
Color:
White Or Red Or Blue
Vision Light Transmissivity:
85%
Advantagement:
High Hardness9.0,wear Resistance,corrosion Resistance
Type:
Single Crystal
Ultrathin Semicondutor Al2O3 Sapphire Substrate Plate For Laser System
diameter 300mm sapphire glass lens; ultrathin sapphire glass wafer ,4inch 0.5mm C-axis sapphire wafer for epi-ready,sapphire thick glass lens for covering,sapphire optical windows,4inch 0.3mm thickness sapphire wafer,
 


   Chemically, sapphire is single crystal aluminum oxide (Al2O3), and is useful in a transmission range from 0.2 - 5.5µm.Sapphire , so making them ideal materials for demanding applications (such as laser systems) because of their extreme surface hardness, high thermal conductivity, high dielectric constant and resistance to common chemical acids and alkalis. And sapphire also  is the second hardest crystal next to diamonds and, because of their structural strength, sapphire windows can be made much thinner than other common dielectric windows with improved transmittance. 
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We can supply professional customized service in time and provide cooperation and support of new product development and technology appliance.

Material Sapphire(Al2O3)
Density(20°C) Kg/m3                 3.98×103
Crystal Structure                         hexagonal
Crystal lattice constant          a=4.785Å c=12.991 Å
Mohs hardness                            9
Melting Point                               2045°C
Boiling Point                                3000°C
Coefficient of Thermal Expansion    α=5.8×10 -6 /K
Specific heat                          0.418W.s/g/k
Thermal conductio                  25.12W/m/k(@100°C)
Refractive Index (nd)               no=1.768ne=1.76
dn/dt                                         13×10-6/K(@633nm)
Tranmission                            T≈85%(0.3~5um)
Permittivity                               11.5(//c), 9.3(⊥c)

Applications
Sapphire Washers, Sapphire Windows, Sapphire Bearings, Sapphire Rods, Sapphire Tubes, Ruby
sapphire wafer, dome sapphire, Sapphire insulation Film, Sapphire ball lens, Sapphire/ruby ball
Ultrathin  Semicondutor  Al2O3 Sapphire Substrate Plate For Laser System 0

 

  1. 4inch 0.3mm 0.5mm thickness sapphire wafer specification
  2. Material: Single crystal Al2O3 99.999%
  3. Orientation: C-plane(0001) Off M -axis 0.2°±0.1
  1. Diameter:100±0.2mm or 3inch,2inch,5inch,6inch
  2. Thickness :300±25um  or 500±15um,
  3. Primary flat:30±1mm (or round wafer)
  1. OF Orientation flat: A axis±0.1° 
  2. Frontside Surface Roughness:Ra<0.3nm
  3. Backside Surface Roughness: 0.8~1.2um 
  4. ( Or double side polished,  both side Ra<0.2nm)
  5. TTV:<15um     BOW:-15~0um      WARP:<20um
  6. Laser Mark Series No. by needs
  7. Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment
  1. Cleanliness :Free visible contamination
     

Sapphire Wafer Process Step
Ultrathin  Semicondutor  Al2O3 Sapphire Substrate Plate For Laser System 1
 
Sample
Ultrathin  Semicondutor  Al2O3 Sapphire Substrate Plate For Laser System 2Ultrathin  Semicondutor  Al2O3 Sapphire Substrate Plate For Laser System 3

Ultrathin  Semicondutor  Al2O3 Sapphire Substrate Plate For Laser System 4

Ultrathin  Semicondutor  Al2O3 Sapphire Substrate Plate For Laser System 5
 

we also can provide other materials crystal seimconductor wafers as like  GaN, SiC,GaAs,InP,MgO etc.

 
CATALOGU & Stcok List

Standard wafer(customzied)

2 inch C-plane sapphire wafer SSP/DSP
3 inch C-plane sapphire wafer SSP/DSP
4 inch C-plane sapphire wafer SSP/DSP
6 inch C-plane sapphire wafer SSP/DSP
Special Cut
A-plane (1120) sapphire wafer
R-plane (1102) sapphire wafer
M-plane (1010) sapphire wafer
N-plane (1123) sapphire wafer
C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis
Other customized orientation
Customized Size
10*10mm sapphire wafer
20*20mm sapphire wafer
Ultra thin (100um) sapphire wafer
8 inch sapphire wafer
Patterned Sapphire Substrate (PSS)
2 inch C-plane PSS
4 inch C-plane PSS
2inch

DSP C-AXIS 0.1mm/0.175mm/0.2mm/0.3mm/0.4mm

/0.5mm/ 1.0mmt

SSP C-axis 0.2/0.43mm

(DSP&SSP) A-axis/M-axis/R-axis 0.43mm

 

3inch

 

DSP/ SSP C-axis 0.43mm/0.5mm

 

4Inch

 

dsp c-axis 0.4mm/ 0.5mm/1.0mm

ssp c-axis 0.5mm/0.65mm/1.0mmt

 

 

6inch

ssp c-axis 1.0mm/1.3mmm

 

dsp c-axis 0.65mm/ 0.8mm/1.0mmt

 

 

Packing & Delivery

Packing Details : Packing, BOX,CARTONS by 25pcs cassette in cleaning room by vacuumize

Delivery Details : 3-20  days after order of Solid bicycle tire tubesrecieving your pament will be send out.

 

Q: What's the way of shipping and cost?

 

(1) We accept DHL, Fedex, TNT, UPS, EMS, SFand etc.

(2) If you have your own express account, it's great.

 

 

Q: How to pay?

 

(1) T/T, PayPal, West Union, MoneyGram and

Assurance payment on Alibaba and etc..

(2) Bank Fee: West Union≤USD1000.00),

T/T -: over 1000usd ,please by t/t

 

Q: What's the deliver time?

 

(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.