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Phone Number : 15801942596
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4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade

  • 4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade
  • 4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade
  • 4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade
Place of Origin china
Brand Name zmsh
Model Number 6inch-001
Minimum Order Quantity 1pcs
Price by case by FOB
Packaging Details Packaged in a class 100 clean room environment, in cassettes of single wafer containers
Delivery Time within 40days
Supply Ability 50pcs/months
Product Details
Applications Device,led, 5G, Detector,power Electronics Industry Semicondctor Wafer
Material Semiconductor Sic Color Green Or White Or Blue
Hardness 9.0 Type 4H,6H,doped, No-doped,
High Light

semicondctor silicon carbide substrate

,

6 Inch sic substrate

,

Dummy Grade sic wafer
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Product Description

4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade

6inch 4H-N 500mm 350um sic substrate wafer for powder device

 

6 inch diameter, Silicon Carbide (SiC) Substrate Specification  
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 150.0 mm±0.2mm
ThicknessΔ 350 μm±25μm or 500±25un
Wafer Orientation Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : <0001>±0.5° for 6H-SI/4H-SI
Primary Flat {10-10}±5.0°
Primary Flat Length 47.5 mm±2.5 mm
Edge exclusion 3 mm
TTV/Bow /Warp ≤15μm /≤40μm /≤60μm
Micropipe Density ≤1 cm-2 ≤5 cm-2 ≤15 cm-2 ≤100 cm-2
Resistivity 4H-N 0.015~0.028 Ω·cm
4/6H-SI ≥1E5 Ω·cm
Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤2% Cumulative area ≤5%
Polytype Areas by high intensity light None Cumulative area≤2% Cumulative area≤5%
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length
Edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each
Contamination by high intensity light None

 

 

4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade 04inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade 1
 
About our company
 
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.
 
4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade 24inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade 34inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade 4
 
Tags:

sic wafer

sic substrate

silicon carbide substrate

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