• Thermal Performance: High thermal conductivity (~4.9 W/cm·K) for efficient heat dissipation in high-power, high-frequency devices.

• Chemical Stability: Strong chemical inertness, high temperature and oxidation resistance.

• Mechanical Properties: High hardness, wear resistance, and stable lattice structure.

Main Applications

• Power semiconductor device substrates (e.g., GaN HEMTs, SiC MOSFETs)

• High-frequency communication devices and RF amplifiers

• Microwave and radar devices requiring high resistivity and low parasitic capacitance

• Electronics in extreme environments: high temperature, high voltage, and strong radiation

Customization

We provide versatile geometric tailoring. We can adjust wafer thickness and offer various off-cut orientations—ranging from standard 4° tilts to on-axis cuts—to match your epitaxial growth recipe. We also offer different doping options, adjusting resistivity levels to support both N-type conductivity for EV power modules and Semi-Insulating structures for high-frequency RF applications. By fine-tuning our growth cycles, we focus on providing the electrical consistency required for stable, high-performance devices.

FAQ

This material exhibits extremely high electrical resistivity, effectively minimizing parasitic current leakage in high-frequency and high-voltage applications.

Yes, we support tailored specifications including doping concentration, dimensional parameters, and surface characteristics for Prime and Research Grade products.

Prime Grade wafers feature minimal defect density suitable for active device fabrication, while Dummy Grade provides economical solutions for process testing and equipment calibration.

Each wafer undergoes individual vacuum-sealing using cleanroom-compatible materials to ensure surface integrity during transportation.

Standard specification orders typically ship within 2-4 weeks, while customized requirements generally require 4-6 weeks for fulfillment.