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| Place of Origin | china |
| Brand Name | zmkj |
| Certification | rohs |
| Model Number | 4H-N |
8inch dia200mm 4H-N Production grade dummy grade SiC wafers
Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device,
Application areas
1 high frequency and high power electronic devices Schottky diodes,
JFET, BJT, PiN, diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
Advantagement
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
| Product Name: | Silicon carbide (SiC) crystal substrate | ||||||||||||||||||||||||
| Product Description: | 2-6inch | ||||||||||||||||||||||||
| Technical parameters: |
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| Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A | ||||||||||||||||||||||||
| Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
2. substrates size of standard
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8inch diameter Silicon Carbide (SiC) Substrate Specification |
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| Grade | Production Grade | Research Grade | Dummy Grade | ||||||
| Diameter | 200.0 mm±0.5 mm | ||||||||
| Thickness | 500 μm±25μm (or 1000um thickness also can be customzied produce ) | ||||||||
| Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N | ||||||||
| Micropipe Density | ≤2 cm-2 | ≤10cm-2 | ≤50 cm-2 | ||||||
| Resistivity | 4H-N | 0.015~0.028 Ω•cm | |||||||
| Primary Flat and length | {1-100}±5.0° ,Notch | ||||||||
| Secondary Flat Length | none | ||||||||
| Secondary Flat Orientation | None | ||||||||
| Edge exclusion | 3 mm | ||||||||
| TTV/Bow /Warp | ≤10μm /≤25μm /≤30μm// ≤15μm /≤45μm /≤50μm// ≤20μm /≤65μm /≤70μm | ||||||||
| Roughness | Polish Ra≤5 nm ,CMP Ra≤0.5 nm | ||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | N/A | ||||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | ||||||
| Polytype Areas by high intensity light | None | Cumulative area ≤10% | Cumulative area ≤30% | ||||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | ||||||
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||||||
| Contamination by high intensity light | None | ||||||||
Sic wafer ＆ ingots 2-6inch and other customized size also can be provided.
3.Pictures of delivery Products before
A:semiconductor wafers and Optical lens,mirrors,windows,filters,prisms
A: In general delivery time is about one month for custom produced optics.except stock ones or some special optics.
A: We can provide free samples if we have stock optics as your request,while custom produced samples are not free.
MOQ is 10pcs for most of wafer or lens , while MOQ could be only one piece if you need a element in big dimention.
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