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4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
  • 4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
  • 4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
  • 4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
  • 4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
  • 4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device

4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device

Place of Origin CHINA
Brand Name tankblue
Certification CE
Model Number 4h-n
Product Details
Materials:
SIC Crystal
Type:
4h-n
Purity:
99.9995%
Resistivity:
0.015~0.028ohm.cm
Size:
2-8inch 2inch, 3inch ,4inch ,6inch ,8inch
Thickness:
350um Or Customized
MPD:
《2cm-2
Application:
For SBD, MOS Device
TTV:
《15um
Bow:
《25um
Warp:
《45um
Surface:
Si-face CMP, C-face MP
High Light: 

4H-N Sic Crystal

,

6inch Sic Wafers

,

SBD Device Sic Wafers

Product Description

 

 

4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device

 

1. Comparison of third-generation semiconductor materials

 

SiC crystal is a third-generation semiconductor material, which has great advantages in low-power, miniaturization, high-voltage and high-frequency application scenarios. The third-generation semiconductor materials are represented by silicon carbide and gallium nitride. Compared with the previous two generations of semiconductor materials, the biggest advantage is its wide band-free width, which ensures that it can penetrate higher electric field strength and is suitable for preparing high-voltage and high-frequency power devices.

2. Classification

   Silicon carbide SiC substrates can be divided into two categories: semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon carbide substrates with high resistivity (resistorivity ≥107Ω·cm), and conductive silicon carbide substrates with low resistivity (the resistivity range is 15-30mΩ·cm).

4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device 04H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device 14H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device 2

2. Specification for 6inch 4H-N sic wafers .(2inch,3inch 4inch ,8inch sic wafer also is avaiable)

Grade

Zero MPD Production

Grade (Z Grade)

Standard Production Grade (P Grade)

Dummy Grade

(D Grade)

Diameter 99.5 mm~100.0 mm
Thickness 4H-N 350 μm±20 μm 350 μm±25 μm
4H-SI 500 μm±20 μm 500 μm±25 μm
 Wafer Orientation Off axis: 4.0°toward <1120 > ±0.5°for 4H-N, On axis: <0001>±0.5°for 4H-SI
 Micropipe Density 4H-N ≤0.5cm-2 ≤2 cm-2 ≤15 cm-2
4H-SI ≤1cm-2 ≤5 cm-2 ≤15 cm-2
※ Resistivity 4H-N 0.015~0.025 Ω·cm 0.015~0.028 Ω·cm
4H-SI ≥1E9 Ω·cm ≥1E5 Ω·cm
 Primary Flat Orientation {10-10} ±5.0°
 Primary Flat Length 32.5 mm±2.0 mm
Secondary Flat Length 18.0 mm±2.0 mm
 Secondary Flat Orientation Silicon face up: 90°CW. from Prime flat ±5.0°
 Edge Exclusion 3 mm
LTV/TTV/Bow /Warp ≤3 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm

※ Roughness

Polish Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm

 Edge Cracks By High Intensity Light

 

None Cumulative length ≤ 10 mm, single length≤2 mm
 Hex Plates By High Intensity Light Cumulative area ≤0.05% Cumulative area ≤0.1%
 Polytype Areas By High Intensity Light None Cumulative area≤3%
 Visual Carbon Inclusions Cumulative area ≤0.05% Cumulative area ≤3%

Silicon Surface Scratches By High Intensity Light

None Cumulative len`gth≤1×wafer diameter
Edge Chips High By Intensity Light None permitted ≥0.2 mm width and depth 5 allowed, ≤1 mm each

Silicon Surface Contamination By High Intensity

None
Packaging Multi-wafer Cassette or Single Wafer Container

 

6inch N-Type SiC Substrates Specifications
Property P-MOS Grade P-SBD Grade D Grade  
Crystal Specifications  
Crystal Form 4H  
Polytype Area None Permitted Area≤5%  
(MPD) a ≤0.2 /cm2 ≤0.5 /cm2 ≤5 /cm2  
Hex Plates None Permitted Area≤5%  
Hexagonal Polycrystal None Permitted  
Inclusions a Area≤0.05% Area≤0.05% N/A  
Resistivity 0.015Ω•cm—0.025Ω•cm 0.015Ω•cm—0.025Ω•cm 0.014Ω•cm—0.028Ω•cm  
(EPD)a ≤4000/cm2 ≤8000/cm2 N/A  
(TED)a ≤3000/cm2 ≤6000/cm2 N/A  
(BPD)a ≤1000/cm2 ≤2000/cm2 N/A  
(TSD)a ≤600/cm2 ≤1000/cm2 N/A  
(Stacking Fault) ≤0.5% Area ≤1% Area N/A  
Surface Metal Contamination (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2  
Mechanical Specifications  
Diameter 150.0 mm +0mm/-0.2mm  
Surface Orientation Off-Axis:4°toward <11-20>±0.5°  
Primary Flat Length 47.5 mm ± 1.5 mm  
Secondary Flat Length No Secondary Flat  
Primary Flat Orientation <11-20>±1°  
Secondary Flat Orientation N/A  
Orthogonal Misorientation ±5.0°  
Surface Finish C-Face:Optical Polish,Si-Face:CMP  
Wafer Edge Beveling  
Surface Roughness
(10μm×10μm)
Si Face Ra≤0.20 nm ; C Face Ra≤0.50 nm  
Thickness a 350.0μm± 25.0 μm  
LTV(10mm×10mm)a ≤2μm ≤3μm  
(TTV)a ≤6μm ≤10μm  
(BOW) a ≤15μm ≤25μm ≤40μm  
(Warp) a ≤25μm ≤40μm ≤60μm  
Surface Specifications  
Chips/Indents None Permitted ≥0.5mm Width and Depth Qty.2 ≤1.0 mm Width and Depth  
Scratches a
(Si Face,CS8520)
≤5 and Cumulative Length≤0.5×Wafer Diameter ≤5 and Cumulative Length≤1.5× Wafer Diameter  
TUA(2mm*2mm) ≥98% ≥95% N/A  
Cracks None Permitted  
Contamination None Permitted  
Edge Exclusion 3mm  

 

4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device 34H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device 44H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device 54H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device 6

2. Industrial chain

The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.

 

ZMSH Technology can provide customers with imported and domestic high-quality conductive, 2-6inch semi-insulating and HPSI (High Purity Semi-insulating) SiC substrates in batches; In addition, it can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets, and can also be customized according to the specific needs of customers, with no minimum order quantity.

 

 

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