4inch 6inch 8inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device, 8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices
SiC (Silicon Carbide) is a compound material consists of silicon (Si) and carbon (C), that has high hardness and heat resistance, and it’s chemically stable.
As it has a wide bandgap, the application to the semiconductor material is getting promoted.
With the high accuracy and high rigid grinding system of our edge grinder, smooth finish can be achieved even with SiC wafer that is difficult to cut material.
Comparison of third-generation semiconductor materials
SiC crystal is a third-generation semiconductor material, which has great advantages in low-power, miniaturization, high-voltage and high-frequency application scenarios. The third-generation semiconductor materials are represented by silicon carbide and gallium nitride. Compared with the previous two generations of semiconductor materials, the biggest advantage is its wide band-free width, which ensures that it can penetrate higher electric field strength and is suitable for preparing high-voltage and high-frequency power devices.
Silicon carbide SiC substrates can be divided into two categories: semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon carbide substrates with high resistivity (resistorivity ≥107Ω·cm), and conductive silicon carbide substrates with low resistivity (the resistivity range is 15-30mΩ·cm).
Specification for 8inch 4H-N sic wafers .(2inch,3inch 4inch ,8inch sic wafer also is avaiable)
- Size: 8inch;
- Diameter: 200mm±0.2;
- Thickness: 500um±25;
- Surface Orientation: 4 toward [11-20]±0.5°;
- Notch orientation:[1-100]±1°；
- Notch depth: 1±0.25mm；
- Micropipe: <1cm2;
- Hex Plates: None Permitted;
- Resistivity: 0.015~0.028Ω;
- SF: area<1%
- Poly areas: ≤5%;
- Scratch: <5 and Cumulative Length< 1 Wafer Diameter;
- Chips/Indents: None permit D>0.5mm Width and Depth;
- Cracks: None;
- Stain: None
- Wafer edge: Chamfer;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.
Why choose ZMSH company
- Complete production chain from cutting to final cleaning and packing.
- Capability to reclaim wafers with diameters 4-inch—12-inch.
- 20 year experience of wafering and reclaiming of monocrystalline electronic materials
ZMSH Technology can provide customers with imported and domestic high-quality conductive, 2-6inch semi-insulating and HPSI (High Purity Semi-insulating) SiC substrates in batches; In addition, it can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets, and can also be customized according to the specific needs of customers, with no minimum order quantity.
Tel: +86-198-2279- 1220(whatsapp or skype is available )
Company: SHANGHAI FAMOUS TRADE CO.,LTD.
Factory: WUXI JINGJING TECHNOLOGY CO.,LTD.
Address: Room.5-616,No.851 Dianshanhu Road,Qingpu Area
Shanghai city, China /201799
We are focus on semiconductor crystal(GaN;SiC;Sapphire;GaAs;InP;Silicon;MgO,LT/LN; etc.)