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N-Type / Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers
  • N-Type /  Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers
  • N-Type /  Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers
  • N-Type /  Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers
  • N-Type /  Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers

N-Type / Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers

Place of Origin CHINA
Brand Name ZMSH
Certification CE
Model Number N-type/P-type
Product Details
Material:
InAs Monocrystalline
Thickness:
500um ±25um
TYPE:
Un-doepd/ Sn/S/Zn-doped
Orientation:
100/111
Growth Method:
LEC
Application:
Infrared Luminescence Device
Industry:
Semiconductor Substrate
Surface:
DSP/SSP
High Light: 

2inch InAs Wafers

,

N-Type GaSb Wafers

,

Un-Doped Type GaAs Wafers

Product Description

 

 

32inch InAs wafers N-type un-doped type GaAs wafers GaSb Wafers

 

Application

 

InAs single crystal can be used as substrate material to grow InAsSb/InAsPSb, InNAsSb and other heterojunction materials, and the production wavelength is 2~14 μ M infrared light emitting device. InAs single crystal substrate can also be used for epitaxial growth of AlGaSb superlattice structural materials, and the production of mid-infrared quantum cascade lasers. These infrared devices have good application prospects in the fields of gas detection and low loss optical fiber communication. In addition, InAs single crystal has high electron mobility and is an ideal material for Hall devices.

 

 

Products Characteristic

 

● The crystal is grown by liquid-sealed Czochralski (LEC) technology with mature technology and stable electrical performance


● X-ray orientation instrument is used for precise orientation, and the crystal orientation deviation is only ± 0.5 º


● The wafer is polished by chemical mechanical polishing (CMP) technology, and the surface roughness is less than 0.5nm


● Meet the use requirements of "out of box"


● Special specification products can be processed according to user requirements

 

Wafers Specification Detail

                                                       Electrical Parameters
Dopant  Type

Carrier concentration

(cm-3)

mobility

(cm2V-1s-1)

dislocation density

(cm-2)

Un-doped n-type <5x1016 ≥2x104 ≤50000
Sn-Doped n-type (5-20)x1017 >2000 ≤50000
S-doped n-type (3-80) x1017 >2000 ≤50000
Zn-doped P-type (3-80) x1017 60~300 ≤50000
Size 2" 3"
Diameter(mm) 50.5±0.5 76.2±0.5
Thickness(um) 500±25 600±25
Orientation (100)/(111) (100)/(111)
Orientation tolerane ±0.5º ±0.5º
OF length(mm) 16±2 22±2
2st OF length(mm) 8±1 11±1
TTV(um) <10 <10
Bow(um) <10 <10
Warp(um) <15 <15

 

N-Type /  Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers 0N-Type /  Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers 1

 

InAs wafer InSb wafer InP wafer GaAs wafer GaSb wafer GaP wafer If you are more interesting in insb wafer,Please send emails to us/

ZMSH, as a semiconductor wafer supplier, offers semiconductor substrate and epitaxial wafers of SiC, GaN, III-V group compound and etc.

 

 

Contact Us at Any Time

86-1580-1942596
Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Send your inquiry directly to us