Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: CE
Model Number: N-type/P-type
Payment & Shipping Terms
Minimum Order Quantity: 1PC
Price: USD450/pcs
Packaging Details: single wafers container box under cleaning room
Delivery Time: 1-4weeks
Payment Terms: T/T, Western Union Paypal;
Supply Ability: 50pcs/month
Material: |
InAs Monocrystalline |
Thickness: |
500um ±25um |
TYPE: |
Un-doepd/ Sn/S/Zn-doped |
Orientation: |
100/111 |
Growth Method: |
LEC |
Application: |
Infrared Luminescence Device |
Industry: |
Semiconductor Substrate |
Surface: |
DSP/SSP |
Material: |
InAs Monocrystalline |
Thickness: |
500um ±25um |
TYPE: |
Un-doepd/ Sn/S/Zn-doped |
Orientation: |
100/111 |
Growth Method: |
LEC |
Application: |
Infrared Luminescence Device |
Industry: |
Semiconductor Substrate |
Surface: |
DSP/SSP |
32inch InAs wafers N-type un-doped type GaAs wafers GaSb Wafers
Application
InAs single crystal can be used as substrate material to grow InAsSb/InAsPSb, InNAsSb and other heterojunction materials, and the production wavelength is 2~14 μ M infrared light emitting device. InAs single crystal substrate can also be used for epitaxial growth of AlGaSb superlattice structural materials, and the production of mid-infrared quantum cascade lasers. These infrared devices have good application prospects in the fields of gas detection and low loss optical fiber communication. In addition, InAs single crystal has high electron mobility and is an ideal material for Hall devices.
Products Characteristic
● The crystal is grown by liquid-sealed Czochralski (LEC) technology with mature technology and stable electrical performance
● X-ray orientation instrument is used for precise orientation, and the crystal orientation deviation is only ± 0.5 º
● The wafer is polished by chemical mechanical polishing (CMP) technology, and the surface roughness is less than 0.5nm
● Meet the use requirements of "out of box"
● Special specification products can be processed according to user requirements
Wafers Specification Detail
| Electrical Parameters | ||||
| Dopant | Type |
Carrier concentration (cm-3) |
mobility (cm2V-1s-1) |
dislocation density (cm-2) |
| Un-doped | n-type | ＜5x1016 | ≥2x104 | ≤50000 |
| Sn-Doped | n-type | (5-20)x1017 | ＞2000 | ≤50000 |
| S-doped | n-type | (3-80) x1017 | ＞2000 | ≤50000 |
| Zn-doped | P-type | (3-80) x1017 | 60～300 | ≤50000 |
| Size | 2" | 3" |
| Diameter(mm) | 50.5±0.5 | 76.2±0.5 |
| Thickness(um) | 500±25 | 600±25 |
| Orientation | (100)/(111) | (100)/(111) |
| Orientation tolerane | ±0.5º | ±0.5º |
| OF length(mm) | 16±2 | 22±2 |
| 2st OF length(mm) | 8±1 | 11±1 |
| TTV(um) | ＜10 | ＜10 |
| Bow(um) | ＜10 | ＜10 |
| Warp(um) | ＜15 | ＜15 |
InAs wafer InSb wafer InP wafer GaAs wafer GaSb wafer GaP wafer If you are more interesting in insb wafer,Please send emails to us/
ZMSH, as a semiconductor wafer supplier, offers semiconductor substrate and epitaxial wafers of SiC, GaN, III-V group compound and etc.
