6 Inch Sapphire Wafer BF33 For GaAs Semiconductor Carrier Plate

6 inch synthetic sapphire Bf33 0.725mm Wafer for GaAs

Features for 6 in Sapphire Wafer Single or Double Side Polish

• Material: High purity single crystal Al2O3, sapphire wafer.
• Dimension: 150 mm +/- 0.05 mm, 6 inch
• Thickness: 1300 +/- 25 um
• Orientation: C plane (0001) off M (1-100) plane 0.2 +/- 0.05 degree
• Primary flat orientation: A plane +/- 1 degree
• Primary flat length: 47.5 mm +/- 1 mm
• Total Thickness Variation (TTV): <20 um
• Bow: <25 um
• Warp: <25 um
• Thermal Expansion Coefficient: 6.66 x 10-6 / °C parallel to C axis, 5 x 10-6 /°C perpendicular to C axis
• Dielectric Strength: 4.8 x 105 V/cm
• Dielectric Constant: 11.5 (1 MHz) along C axis, 9.3 (1 MHz) perpendicular to C axis
• Dielectric Loss Tangent (a.k.a. dissipation factor): less than 1 x 10-4
• Thermal Conductivity: 40 W/(m.K) at 20℃
• Polishing: single side polished (SSP) or double side polished (DSP) Ra < 0.5 nm (by AFM). The reverse side of SSP wafer was fine ground to Ra = 0.8 - 1.2 um.
• Laser Mark Series No. by needs
•  Package:Vacuum-sealed containers with nitrogen backfill in a class 100environment
• Cleanliness :Free visible contamination

6 in Sapphire Wafer show

Produce step for saphire wafers

Sapphire crystal body--->get rough ingot in customized axis--->cut tail＆ top off---->

repair diameter shape----> Grind OF surface--->( anneal -->)wire cut--->chamfer-->anneal--->lapped---polished---infection

Synthetic sapphire—sometimes referred to as sapphire glass—is commonly used as a window material, because it is both highly transparent to wavelengths of light between 150 nm (UV) and 5500 nm (IR) (the visible spectrum extends about 380 nm to 750 nm, and extraordinarily scratch-resistant.

The key benefits of sapphire windows are:

Very wide optical transmission band from UV to near-infrared, (0.15–5.5 µm)
Significantly stronger than other optical materials or standard glass windows
Highly resistant to scratching and abrasion
Extremely high melting temperature (2030 °C)

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