Home
>
Products
>
Sapphire Wafer
>
|
|
| Place of Origin | China |
| Brand Name | zmkj |
| Certification | Cz/ Rohs/ GSG |
| Model Number | 4.125/6.125/6inch/8inch |
4inch SSP sapphire wafer quartz glass thickness 0.1mm 0.15mm 0.2mm
4inch 100um 200um 300um thickness sapphire wafer quartz glass
4inch Sapphire Wafer C-Plane Single or Double Side Polished Al2O3 Single Crystal
4inch Dia100mm A plane Single Crystal Sapphire Wafer
2inch Dia50mm C axis Single Crystal Sapphire Wafer Sapphire Substrates
8inch Dia 159mm Single Crystal Sapphire Wafer For Epi - Ready Carrier
4inch/ 5inch/ 6inch/ 6.125inch/8inch c-plane R-axis (1-102) (10-10) sapphire wafer,dia200mm sapphire substrates ,2-6inch C-axis double side polished sapphire wafer for led epi-ready,sapphire substrates, Al2O3 crystal optical lens, Double Side Polished SSP Surface 8" Sapphire Carrier Wafer C-plane(0001) with best price,8inch Dia 159mm Single Crystal Sapphire Wafer For Epi - Ready Carrier
Characteristics of ZMSH’s sapphire substrate
Specifications of Sapphire Wafer, 4 inch, C-plane (0001), Prime Grade
| Item | 4-inch C-plane(0001) 650μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 100.0 mm +/- 0.1 mm | |
| Thickness | 650 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 30.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 20 μm | |
| BOW | < 20 μm | |
| WARP | < 20 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
Electrical Properties of Sapphire
Resistivity, Ohm x cm at 200-500 °C: 1011- 1016
Dielectric constant: 10.0
Dielectric strength, V/cm: 4 x 105
Loss tangent: 1 x 10-4
Application
Some key properties of sapphire wafers include their high thermal conductivity, high mechanical strength, excellent chemical and scratch resistance, and transparency in the visible and near-infrared regions of the spectrum. These properties make sapphire wafers well-suited for a wide range of applications in harsh environments, such as high temperature, high pressure, and corrosive conditions.
What is the roughness of sapphire substrate?
Our 'Standard' sapphire substrates have been polished to a surface quality of 60/40 scratch-dig, have an RMS roughness of ~0.3 nm, and are suitable for most applications (including spectroscopy or thin-film deposition).
Production process
1. Crystal growth: Single-crystal sapphire is typically grown using the Verneuil method or the Kyropoulos method. In the Verneuil method, a powdered form of aluminum oxide (Al2O3) is melted using a high-temperature flame and then allowed to cool and solidify into a single crystal. In the Kyropoulos method, a seed crystal is dipped into a bath of molten Al2O3 and slowly withdrawn while rotating, allowing the crystal to grow from the melt.
2. Cutting and shaping: Once the crystal has been grown, it is cut into wafers using a diamond saw or laser. The wafers are then shaped and polished to the desired thickness and surface finish.
3. Cleaning: The sapphire wafers are cleaned using a combination of mechanical, chemical, and ultrasonic methods to remove any surface contaminants and prepare the surface for further processing.
4. Doping: In some cases, dopants may be added to the sapphire wafers to alter their electrical or optical properties. This is typically done using ion implantation or diffusion methods.
5. Etching: The sapphire wafers may be etched using a variety of chemical or plasma-based processes to create patterns or features on the surface. This is commonly used in the fabrication of microelectronic devices.
6. Metrology: The sapphire wafers are then subjected to various metrology techniques to measure their thickness, flatness, surface roughness, and other properties. This is important to ensure that the wafers meet the required specifications for the intended application.
7. Packaging: The final step in the production process is to package the sapphire wafers for shipment to customers. This typically involves placing the wafers in protective containers to prevent damage during transportation and storage.
Packing of sapphire wafers
Related products
FAQ:
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 10pcs.
(2) For customized products, the MOQ is 25pcs up.
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
Q: Do you have standard products?
A: Our standard products in stock.as like 4inch 0.65mm,0.5mm polished wafer.
Q: How to pay?
A:50％deposit, left before delivery T/T,
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and optical coating for your optical
components based on your needs.
Contact Us at Any Time
